Diode-FET logic circuitry

Claim 2

An exclusive diode-FET read-only memory, having a two-to-three gate delay, comprising: a first plurality of conductive means for conducting signals; a second plurality of conductive means for conducting signals, in proximity with said first plurality of conductive means; a first plurality of diodes, each electrically connecting a unique pair of one of said conductive means of said first plurality and one of said conductive means of said second plurality, thereby storing a datum of information; a first plurality of drivers wherein each driver has an output electrically connected to one of said conductive means of said first plurality of conductive means; a third plurality of conductive means for conducting signals, wherein each of said conductive means of said third plurality is connected to an input of one of said first plurality of drivers; a fourth plurality of conductive means for conducting signals, in proximity with said third plurality of conductive means; a second plurality of diodes, each electrically connecting a unique pair of one of said conductive means of said third plurality and one of said conductive means of said fourth plurality; and a second plurality of drivers wherein each driver has an output connected to at least one of conductive means of said fourth plurality of conductive means, and each said driver, upon receipt of an external address, impresses at least one electrical signal onto one of conductive means of said fourth plurality of conductive means and, via one diode of said second plurality of diodes, onto one of conductive means of said third plurality of conductive means, which addresses and selects one of said first plurality of drivers which in turn affects the electrical state of a particular one of said conductive means of said first plurality of conductive means, therby revealing certain stored data of information.

Claim 3

Apparatus according to claim 1 further comprising: a memory array selector connected to said second plurality of conductive means; and output multiplexer and interface means, connected to said second plurality of conductive means, for multiplexing and interfacing data signals.

Claim 4

Apparatus according to claim 2 further comprising: positive voltage means; ground means; and negative voltage means.

Claim 5

Apparatus according to claim 3 wherein: each driver of said first plurality of drivers comprises a first and second field effect transistor, each having a gate, a drain, and a source, said drain of said first field effect transistor being electrically connected to only one said conductive means of said first plurality of conductive means and to a current source which is connected to said positive voltage means, said source of said first field effect transistor being connected to said ground means, said gate of said first field effect transistor being connected to said drain and gate of said second field effect transistor, said source of said second field effect transistor being connected to said ground means, and said gate of said first field effect transistor being connected to one conductive means of said third plurality of conductive means, and said current source comprising a third field effect transistor having a drain connected to said positive voltage means, and a gate and a source connected to said drain of said first field effect transistor; and each driver of said second plurality of drivers comprises a voltage level shifting means for changing voltage levels and an inverting means for inverting signals, said voltage level shifting means comprising first, second and third diodes connected in series from cathode to anode, having anode of said first diode connected to an address input, and having cathode of said third diode connected to a conductive means of said fourth plurality and connected to a drain of a first field effect transistor having a source and a gate connected to said negative voltage means, said inverting means comprising a second field effect transistor having a gate connected to said drain of said first field effect transistor, a source connected to said ground means, a drain connected to a source and to a gate of a third field effect transistor, and to an anode of a fourth diode, a drain of said third field effect transistor connected to said positive voltage means, cathode of said fourth diode connected to an anode of a fifth diode, cathode of said fifth diode connected to a drain of a fourth field effect transistor and to a conductive means of said fourth plurality of conductive means, and a gate and a source of said fourth field effect transistor connected to said ground means.

Claim 6

Apparatus according to claim 4 wherein: each of said first plurality of diodes has its anode and cathode connected to said unique pair of one of said conductive means of said first plurality and one of said conductive means of said second plurality, in that order, but not all of said conductive means of said first plurality is necessarily interconnected by a diode of said first plurality of diodes to a conductive means of said second plurality of conductive means; and each of said second plurality of diodes has its anode and cathode connected to said unique pair of one of said conductive means of said third plurality and one of said conductive means of said fourth plurality, in that order, but not all of said conductive means of said third plurality is necessarily interconnected by a diode of said second plurality of diodes to a conductive means of said fourth plurality of conductive means.

Claim 7

Apparatus according to claim 5 wherein said memory array selector comprises: a fifth plurality of conductive means for conducting signals, in proximity with said second plurality of conductive means; a third plurality of diodes, each electrically connecting only one conductive means of said fifth plurality of conductive means to every conductive means of said second plurality of conductive means of only one array of said circuit configuration, being selected for providing said functionally read-only memory output; a third plurality of drivers wherein each driver has an output electrically connected to one conductive means of said fifth plurality of conductive means; a sixth plurality of conductive means for conducting signals; a seventh plurality of conductive means for conducting signals, in proximity with said sixth plurality of conductive means; a fourth plurality of diodes, each electrically connecting a unique pair of one of said conductive means of said sixth plurality and one of said conductive means of said seventh plurality; and a fourth plurality of drivers wherein each driver has an output connected to at least one of conductive means of said sixth plurality of conductive means so that, upon receipt of an external address, each said driver impresses at least one electrical signal via at least one of conductive means of said sixth plurality of conductive means and one diode of said fourth plurality of diodes onto one conductive means of said seventh plurality of conductive means which addresses and selects one of said third plurality of drivers which in turn affects the electrical state of a particular one of said conductive means of said fifth plurality of conductive means, thereby selecting a particular memory array and making externally available, data stored in said selected memory array.

Claim 8

Apparatus according to claim 6 wherein said output multiplexer and interface means comprises a plurality of sense amplifier means for sensing data signals, each having a first diode connecting conductive means of said second plurality of conductive means to a drain of a first field effect transistor, said first field effect transistor having a gate and a source connected to said negative voltage means, a second diode connecting said drain of said first filed effect transistor to an output of said sense amplifier means.

Claim 9

Apparatus according to claim 7: each driver of each third plurality of drivers of said memory array selector comprises first and second field effect transistors, each transistor having a gate, a drain, and a source, said drain of said second field effect transistor being electrically connected to only one said conductive means of said fifth plurality of conductive means and to a current source which is connected to said positive voltage means, said source of said first field effect transistor being connected to said ground means, said gate of said first field effect transistor being connected to said drain and gate of said second field effect transistor, said source of said second field effect transistor being connected to said ground means, and said gate of said second field effect transistor being connected to one conductive means of said seventh plurality of conductive means, said current source comprising a third field affect transistor having a drain connected to said positive voltage means, and a gate and a source connected to said drain of said first field effect transistor; and each driver of said fourth plurality of drivers of said memory array selector comprises voltage level shifting means for changing voltage levels and inverting means for inverting signals, said voltage level shifting means comprising first, second and third diodes connected in series, cathode to anode, having anode of said first diode connected to an address input, and having cathode of said third diode connected to a conductive means of said sixth plurality and connected to a drain of a first field effect transistor having a source and a gate connected to said negative voltage means, said inverting means comprising a second field effect transistor having a gate connected to said drain of said first field effect transistor, a source connected to said ground means, a drain connected to a source and to a gate of a third filed effect transistor and connected to an anode of a fourth diode, a drain of said third field effect transistor connected to said positive voltage means, cathode of said fourth diode connected to an anode of a fifth diode, cathode, of said fifth diode connected to a drain of a fourth field effect transistor and a conductive means of said sixth plurality of conductive means, and drain and source of said fourth field effect transistor connected to said ground means.

Claim 10

Apparatus according to claim 8 wherein said output multiplexer and interface means further comprises multiplexer switching means for switching data signals, having inputs connected to outputs of said plurality of sense amplifier means, said multiplexer switching means having a first field effect transistor with a gate connected to said inputs of said mutiplexer switching means and to a current source, a source of said first field effect transistor connected to said ground means, a drain of said first field effect transistor connected to a gate and a source of a second field effect transistor, a drain connected to said positive voltage means, and said drain of said first field effect transistor connected to an output of said multiplexer switching means, said output of said multiplexer switching means being a data output for said circuit configuration of said read-only memory, and said current source comprising a field effect transistor having a source and a gate connected to said gate of said first field effect transistor, and having a drain connected to said positive voltage means.

Claim 11

Apparatus according to claim 9 wherein said diodes are Schottky diodes and said field effect transistors are metal semiconductor field effect transistors.

Claim 12

Apparatus according to claim 10 is a gallium arsenide integrated circuit.