Abstract The invention relates to a field-effect transistor (1;20) with insulated gate electrode (9;30) which comprises in a semiconductor body (5) a drain diffusion zone (2) connected to a drain electrode (6;32) and a source diffusion zone (3) which is disposed spaced from the drain diffusion zone (2) for forming a channel zone (4) and which is connected to a source electrode (7). The gate electrode (9;32) of said field-effect transistor is disposed on a gate insulating layer (8) over the channel zone (4). For protecting the transistor against high voltages produced by electrostatic charging the drain diffusion zone (2) of the transistor and/or the source diffusion zone (3) between the respective associated electrode (6,7;32) and the channel zone (4) is divided into a plurality of parallel strips (10,11). Integrated circuits are also protected against destruction by high voltages if the insulated gate field-effect transistors connected to their output terminals are constructed in the manner outlined above.
A field effect transistor having an insulated gate electrode on a semiconductor body, said body including a drain diffusion zone connected to a drain electrode, a source diffusion zone spaced from said drain diffusion zone to define a channel zone, and a source electrode connected to said source diffusion zone, each of said source and drain diffusion zones comprising a plurality of separated parallel strips extending from the channel zone to said source and drain electrodes, respectively.
Claim 2
Dependent Claim
77 words
A field effect transistor having an insulated gate electrode on a semiconductor body, said body including a drain diffusion zone connected to a drain electrode, a source diffusion zone spaced from said drain diffusion zone to define a channel zone, and a source electrode connected to said source diffusion zone, each of said source and drain diffusion zones comprising a plurality of separated parallel strips extending from the channel zone to said source and drain electrodes, respectively.
Claim 3
Dependent Claim
13 words
A transistor according to claim 1, wherein said gate electrode is doped polysilicon.
Claim 4
Dependent Claim
18 words
A transistor according to claim 1, wherein each of said source and drain electrodes is a metal lead.
Claim 5
Dependent Claim
19 words
A transistor according to claim 1, wherein said channel is doped N-type and said source and drain are P-type.