US4202005A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Distributed collector ballast resistor structure
Assignee: Motorola Solutions Inc
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Filing: 1978-11-20
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Granted: 1980-05-06
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Expires: 1998-11-20
Abstract
Abstract A distributed collector ballast resistor structure for use in a distributed collector contacted transistor comprises a diffusion geometry which is designed to employ a number of distributed collector ballast resistors in parallel as opposed to a single bulk resistor in series with the collector circuit thereby generating a lower current for a given voltage during avalanche while allowing lower saturation voltage, better RF gain and higher saturated output power.
Inventors
- 👤 Paul W. Sanders
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:03
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/137; H10D84/00; H10D84/101; H10D84/121; H10D84/125; H10D84/60; H10D84/611; H10D84/613; H10D84/615
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
99 words
In a distributed collector contacted transistor, a distributed collector ballast resistor structure comprising: a semiconductive substrate layer; a plurality of collector regions disposed in the surface of said substrate; an epitaxial layer bonded to the surface of said substrate and collector regions; an emitter region disposed in the surface of said epitaxial layer and extending above each collector region; a base region disposed in the surface of said epitaxial layer and extending above each collector region; a plurality of collector contacts, each such contact being disposed in the surface of said epitaxial layer and above a respective collector region.
Claim 2
Dependent Claim
99 words
In a distributed collector contacted transistor, a distributed collector ballast resistor structure comprising: a semiconductive substrate layer; a plurality of collector regions disposed in the surface of said substrate; an epitaxial layer bonded to the surface of said substrate and collector regions; an emitter region disposed in the surface of said epitaxial layer and extending above each collector region; a base region disposed in the surface of said epitaxial layer and extending above each collector region; a plurality of collector contacts, each such contact being disposed in the surface of said epitaxial layer and above a respective collector region.
Claim 3
Dependent Claim
26 words
A distributed collector ballast resistor structure according to claim 1 wherein said distributed collector ballast resistors are circuited in parallel between the collectors and said contacts.
Claim 4
Dependent Claim
81 words
A distributed collector ballast resistor structure for use in a top collector contacted RF power transistor comprising: (a) an upper N - (or P - ) epitaxial layer embedded in the top surface of which are a rectangular emitter and a base and a row of square N + (or P + ) contacts; and (b) a lower substrate layer embedded in the top surface of which are a number of rectangular N + (or P + ) buried collector regions.
Claim 5
Dependent Claim
81 words
A distributed collector ballast resistor structure for use in a top collector contacted RF power transistor comprising: (a) an upper N - (or P - ) epitaxial layer embedded in the top surface of which are a rectangular emitter and a base and a row of square N + (or P + ) contacts; and (b) a lower substrate layer embedded in the top surface of which are a number of rectangular N + (or P + ) buried collector regions.
Claim 6
Dependent Claim
23 words
A distributed collector ballast resistor structure according to claim 3 wherein said emitter, base, collector, and contacts are all made of conducting material.
Claim 7
Dependent Claim
28 words
A distributed collector ballast resistor structure according to claim 3 wherein the long sides of said emitter, base, and row of contacts are all parallel to each other.
Claim 8
Dependent Claim
32 words
A distributed collector ballast resistor structure according to claim 3 wherein the long sides of said rectangular collectors are perpendicular to the long sides of said emitter, base, and row of contacts.
Claim 9
Dependent Claim
42 words
A distributed collector ballast resistor structure according to claim 3 wherein said collectors pass underneath and from said emitter to said base and on to beneath one of said contacts separated therefrom by said N - (or P - ) epitaxial layer.
References Cited (Backward Citations)
US4123672A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-05-06 | 1983-11-05 | 1984-05-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-05-06 | 1987-11-05 | 1988-05-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-05-06 | 1991-11-05 | 1992-05-06 | $7700.00 | Window Closed / Lapsed |