US4845386A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bi-MOS logic circuit having a totem pole type output buffer section
Assignee: Toshiba Corp
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Filing: 1988-02-01
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Granted: 1989-07-04
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Expires: 2008-02-01
Abstract
Abstract A totem pole type output buffer section comprises a pull-up NPN bipolar transistor and a pull-down NPN bipolar transistor. These NPN bipolar transistors are selectively switch-controlled by a first MOS FET. Another NPN bipolar transistor is darlington-connected to the pull-down NPN bipolar transistor, and is switch-controlled by the second MOS FET. The second MOS FET is of the same conductivity type as and has a gate connected to a gate of the first MOS FET.
Inventors
- 👤 Masaji Ueno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:20
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/02; H03K19/08; H03K19/094; H03K19/0944; H03K19/09448; H03K19/01; H03K19/013; H03K19/0136
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
169 words
A Bi-MOS logic circuit comprising: first and second NPN bipolar transistors in which current paths between collectors and emitters are serially connected across power source terminals, and the series-connecting point is connected to an output terminal; a first MOS FET for selectively switching-on said first and second NPN bipolar transistors in response to an input signal, said first MOS FET being coupled to the base of said first NPN bipolar transistor, to the base of said second NPN bipolar transistor, and to receive said input signal; a third NPN bipolar transistor having a collector to emitter path connected between said output terminal and the base of said second NPN bipolar transistor; and a second MOS FET of the same conductivity type as that of said first MOS FET, one end of said second MOS FET being connected to said output terminal, the other end being connected to a base of said third NPN bipolar transistor, and a gate being connected to a gate of said first two MOS FET.
Claim 2
Dependent Claim
169 words
A Bi-MOS logic circuit comprising: first and second NPN bipolar transistors in which current paths between collectors and emitters are serially connected across power source terminals, and the series-connecting point is connected to an output terminal; a first MOS FET for selectively switching-on said first and second NPN bipolar transistors in response to an input signal, said first MOS FET being coupled to the base of said first NPN bipolar transistor, to the base of said second NPN bipolar transistor, and to receive said input signal; a third NPN bipolar transistor having a collector to emitter path connected between said output terminal and the base of said second NPN bipolar transistor; and a second MOS FET of the same conductivity type as that of said first MOS FET, one end of said second MOS FET being connected to said output terminal, the other end being connected to a base of said third NPN bipolar transistor, and a gate being connected to a gate of said first two MOS FET.
Claim 3
Dependent Claim
37 words
A Bi-MOS logic circuit according to claim 1, wherein a fourth NPN bipolar transistor in darlington-connected to said first NPN bipolar transistor, and said fourth NPN bipolar transistor is selectively switched on by the first MOS FET.
Claim 4
Dependent Claim
51 words
A Bi-MOS logic circuit according to claim 1, wherein said Bi-MOS logic circuit is a Bi-CMOS buffer circuit, a CMOS inverter circuit is provided at an input stage of said Bi-CMOS buffer circuit, and an output of said CMOS inverter circuit is supplied to a gate of said first MOS FET.
Claim 5
Dependent Claim
23 words
A Bi-MOS logic circuit according to claim 1, wherein said second and third NPN bipolar transistors are Schottky type NPN bipolar transistors, respectively.
Claim 6
Dependent Claim
22 words
A Bi-MOS logic circuit according to claim 1, wherein said first and second MOS FETs are N channel type MOS FETs, respectively.
Claim 7
Dependent Claim
21 words
A Bi-MOS logic circuit according to claim 2, wherein said fourth NPN bipolar transistor is a Schottky type NPN bipolar transistor.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-03 | 1993-01-02 | 1993-07-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-03 | 1997-01-02 | 1997-07-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-03 | 2001-01-02 | 2001-07-04 | $7700.00 | Window Closed / Lapsed |