Patent US4842892A successfully refreshed from Google Patents.
US4842892A
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Method for depositing an n+ amorphous silicon layer onto contaminated substrate
Assignee: Xerox Corp
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Filing: 1987-09-29
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Granted: 1989-06-27
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Expires: 2007-09-29
Abstract
Abstract A method of depositing a delamination bubble-free PECVD thin film n+ amorphous silicon layer, from the decomposition of a gaseous mixture of silane and phosphine, upon a substrate having one or more thin film layers thereon, wherein there is contamination upon the exposed surface of the outer thin film layer, comprising purging the plasma chamber with pure silane gas, igniting the plasma and then introducing the gaseous mixture of silane and phosphine into the plasma chamber to complete the formation of the n+ layer.
Inventors
- 👤 Donald L. Smith
- 👤 Andrew S. Alimonda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 13:57
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
135 words
A method of depositing a thin film n+ amorphous silicon layer, from the decomposition of a gaseous mixture of silane and phosphine, upon the exposed surface of a substrate having one or more thin film layers thereon, wherein there is contamination upon said exposed surface, comprising the steps of placing said substrate in a plasma chamber, flowing silane into said chamber for a purge period, and depositing an n+ amorphous silicon layer upon said exposed surface by igniting a plasma in said chamber, for decomposing said silane and for depositing a protective layer of intrinsic amorphous silicon, of sufficient thickness to cover said contamination, and then flowing a gaseous mixture of silane and phosphine into said chamber, for decomposing said silane and phosphine and for depositing a layer of n+amorphous silicon upon said protective layer.
Claim 2
Independent Claim
135 words
A method of depositing a thin film n+ amorphous silicon layer, from the decomposition of a gaseous mixture of silane and phosphine, upon the exposed surface of a substrate having one or more thin film layers thereon, wherein there is contamination upon said exposed surface, comprising the steps of placing said substrate in a plasma chamber, flowing silane into said chamber for a purge period, and depositing an n+ amorphous silicon layer upon said exposed surface by igniting a plasma in said chamber, for decomposing said silane and for depositing a protective layer of intrinsic amorphous silicon, of sufficient thickness to cover said contamination, and then flowing a gaseous mixture of silane and phosphine into said chamber, for decomposing said silane and phosphine and for depositing a layer of n+amorphous silicon upon said protective layer.
Claim 3
Dependent Claim
25 words
The method of depositing a thin film n+ amorphous silicon layer as defined in claim 1 wherein said gaseous mixture is flowed into said plasma.
Claim 4
Dependent Claim
45 words
The method of depositing a thin film n+ amorphous silicon layer as defined in claim 1 wherein said plasma is extinguished after said protective layer of intrinsic amorphous silicon is deposited and said plasma is reignited after said gaseous mixture is flowed into said chamber.
Claim 5
Independent Claim
165 words
A method of depositing a thin film n+ amorphous silicon layer, from the decomposition of a gaseous mixture of silane and phosphine, upon a substrate having one or more thin film layers thereon, wherein there is contamination upon the exposed surface of the outer thin film layer, comprising the steps of placing said substrate in a first plasma chamber, flowing silane into said first chamber for a first purge period, and depositing an n+ amorphous silicon layer upon said exposed surface by igniting a plasma in said first chamber, for decomposing said silane and for depositing a thin protective layer of intrinsic amorphous silicon, of sufficient thickness to cover said contamination, moving said substrate into a second plasma chamber, flowing a gaseous mixture of silane and phosphine into said second plasma chamber for a second purge period, and igniting a plasma in said second chamber, for decomposing said silane and phosphine and for depositing a layer of n+ amorphous silicon upon said thin protective layer.
Claim 6
Independent Claim
165 words
A method of depositing a thin film n+ amorphous silicon layer, from the decomposition of a gaseous mixture of silane and phosphine, upon a substrate having one or more thin film layers thereon, wherein there is contamination upon the exposed surface of the outer thin film layer, comprising the steps of placing said substrate in a first plasma chamber, flowing silane into said first chamber for a first purge period, and depositing an n+ amorphous silicon layer upon said exposed surface by igniting a plasma in said first chamber, for decomposing said silane and for depositing a thin protective layer of intrinsic amorphous silicon, of sufficient thickness to cover said contamination, moving said substrate into a second plasma chamber, flowing a gaseous mixture of silane and phosphine into said second plasma chamber for a second purge period, and igniting a plasma in said second chamber, for decomposing said silane and phosphine and for depositing a layer of n+ amorphous silicon upon said thin protective layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-26 | 1992-12-26 | 1993-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-26 | 1996-12-26 | 1997-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-26 | 2000-12-26 | 2001-06-27 | $7700.00 | Window Closed / Lapsed |