US4634601A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for production of semiconductor by glow discharge decomposition of silane
Assignee: Kanegafuchi Chemical Industry Co Ltd
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Filing: 1985-03-26
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Granted: 1987-01-06
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Expires: 2005-03-26
Abstract
Abstract The production of a semiconductor by the glow discharge decomposition of a silane type gas is accomplished advantageously by a method which comprises effecting the glow discharge decomposition of introduced silane type gas with a plurality of opposed electrodes disposed substantially perpendicularly to a substrate and insulated from the ground potential and subsequently allowing the product of the decomposition to be deposited on the substrate disposed so as to be exposed to the introduced silane type gas. The semiconductor obtained by this method is free from the drawbacks suffered by the conventional method using a power source of high frequency.
Inventors
- 👤 Yoshihiro Hamakawa
- 👤 Hideo Yamagishi
- 👤 Yoshihisa Tawada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 04:32
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C23C16/44; C23C16/50; C23C16/505; C23C16/509; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
74 words
A method for the production of a semiconductor by the glow discharge decomposition of a silane type gas, characterized by effecting said glow discharge decomposition of introduced silane type gas with a plurality of opposed electrodes disposed substantially perpendicular to a substrate and insulated from the ground potential and subsequently allowing the product of said decomposition to be deposited on said substrate disposed so as to be exposed to said introduced silane type gas.
Claim 2
Independent Claim
74 words
A method for the production of a semiconductor by the glow discharge decomposition of a silane type gas, characterized by effecting said glow discharge decomposition of introduced silane type gas with a plurality of opposed electrodes disposed substantially perpendicular to a substrate and insulated from the ground potential and subsequently allowing the product of said decomposition to be deposited on said substrate disposed so as to be exposed to said introduced silane type gas.
Claim 3
Dependent Claim
29 words
A method according to claim 1, wherein the frequency of the power source used in said glow discharge decomposition falls in the range of 1 KHz to 10 MHz.
References Cited (Backward Citations)
US4064521A
Cited
US4262631A
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US4410559A
Cited
US4452828A
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US4460673A
Cited
US4532150A
Cited
US4492736A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-01-05 | 1990-07-07 | 1991-01-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-01-05 | 1994-07-07 | 1995-01-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-01-05 | 1998-07-07 | 1999-01-06 | $7700.00 | Window Closed / Lapsed |