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US4841531A
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Semiconductor laser device
Assignee: Opnext Japan Inc
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Filing: 1988-02-11
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Granted: 1989-06-20
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Expires: 2008-02-11
Abstract
Abstract A semiconductor laser having a double hetero structure comprises a cladding layer of In 1-x-y Ga x Al y P 1-z As z (0≦x≦1, 0≦y≦1, 0≦z≦0.5, 0.5≦x+y≦1) and an active layer of a strained-layer-superlattice of In 1-x-y Ga x Al y P 1-z As z (0≦x≦1, 0≦y≦1, 0≦z≦1, 0≦x+y≦1) system, thus enabling the lasing of wavelength ranges from infra-red to green.
Inventors
- 👤 Masahiko Kondow
- 👤 Shin Satoh
- 👤 Shigekazu Minagawa
- 👤 Akio Ohishi
- 👤 Takashi Kajimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 13:35
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; B; B82; B82Y; B82Y20/00; H01S5/342; H01S5/3425; H01S5/3434
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
64 words
In a semiconductor laser device having a double hetero structure semiconductor laser, the improvement comprising said double hetero structure semiconductor laser comprising a cladding layer of In 1-x-y Ga x Al y P 1-z As z (0≦x≦1, 0≦y≦1, 0≦z≦0.5, 0.5≦x+y≦1) and an active layer of a strained-layer superlattice of In 1-x-y Ga x Al y P 1-z As z (0≦x≦1, 0≦y≦1, 0≦z≦1, 0≦x+y≦1) system.
Claim 2
Dependent Claim
64 words
In a semiconductor laser device having a double hetero structure semiconductor laser, the improvement comprising said double hetero structure semiconductor laser comprising a cladding layer of In 1-x-y Ga x Al y P 1-z As z (0≦x≦1, 0≦y≦1, 0≦z≦0.5, 0.5≦x+y≦1) and an active layer of a strained-layer superlattice of In 1-x-y Ga x Al y P 1-z As z (0≦x≦1, 0≦y≦1, 0≦z≦1, 0≦x+y≦1) system.
Claim 3
Dependent Claim
30 words
A semiconductor laser device according to claim 1, wherein a substrate of said semiconductor laser is made of a material selected from the group consisting of Si, GaP and GaAs.
Claim 4
Dependent Claim
32 words
A semiconductor laser device according to claim 1, wherein said cladding layer and said active layer, which constitute the double hetero structure, are epitaxially grown on a substrate of the semiconductor laser.
References Cited (Backward Citations)
US4494237A
Cited
US4759024A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-06-19 | 1992-12-19 | 1993-06-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-19 | 1996-12-19 | 1997-06-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-19 | 2000-12-19 | 2001-06-20 | $7700.00 | Window Closed / Lapsed |