US4828938A
Expired / Lapsed
US
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Method for depositing materials containing tellurium and product
Assignee: The AT&T MVPD Group LLC
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Filing: 1986-04-11
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Granted: 1989-05-09
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Expires: 2006-04-11
Abstract
Abstract A method for chemical vapor deposition of materials containing tellurium, such as cadmium telluride and mercury cadmium telluride, wherein the reactant source of the tellurium is a tellurophene or methyltellurol. These reactant sources have high vapor pressures, and the reactant source vapors emitted from the reactant sources have decomposition temperatures of less than about 300 DEG C., so that deposition may be accomplished at low temperatures of about 250 DEG C. The reactant source vapor containing tellurium is mixed with a reactant source vapor containing another substance to be codeposited, such as dimethylcadmium or dimethylmercury, and contacted with a substrate maintained at the deposition temperature, the deposition being preferably accomplished in an inverted vertical chemical vapor deposition reactor.
Inventors
- 👤 Lawrence S. Lichtmann
- 👤 James D. Parsons
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:25
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/305; C23C16/306; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/46; C30B29/48; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2912; H10P14/2913; H10P14/2917; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3432; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9335; Y10S428/938
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
84 words
A method of depositing on a substrate a thin film of a material containing tellurium, comprising the steps of: providing a first reactant source vapor having therein molecules containing tellurium selected from the group consisting of a tellurophene and methyltellurol; mixing the first reactant source vapor with a second reactant source vapor having therein molecules containing another substance to be codeposited with the tellurium; and contacting the mixture to a substrate maintained at a temperature of from about 200° C. to about 300° C.
Claim 2
Independent Claim
84 words
A method of depositing on a substrate a thin film of a material containing tellurium, comprising the steps of: providing a first reactant source vapor having therein molecules containing tellurium selected from the group consisting of a tellurophene and methyltellurol; mixing the first reactant source vapor with a second reactant source vapor having therein molecules containing another substance to be codeposited with the tellurium; and contacting the mixture to a substrate maintained at a temperature of from about 200° C. to about 300° C.
Claim 3
Dependent Claim
13 words
The method of claim 1, wherein one substance codeposited with tellurium is cadmium.
Claim 4
Dependent Claim
13 words
The method of claim 2, wherein the source of the cadmium is dimethylcadmium.
Claim 5
Dependent Claim
26 words
The method of claim 1, wherein the substance codeposited with tellurium is selected from the group consisting of cadmium, mercury, and combinations of cadmium and mercury.
Claim 6
Dependent Claim
27 words
The method of claim 4, wherein the substance codeposited includes mercury, and the source of the mercury is selected from the group consisting of dimethylmercury and diethylmercury.
Claim 7
Dependent Claim
20 words
The method of claim 1, wherein the substrate is selected from the group consisting of cadmium telluride and indium antimonide.
Claim 8
Dependent Claim
12 words
The method of claim 1, wherein the reactant source vapor is methyltellurol.
Claim 9
Dependent Claim
17 words
The method of claim 1, wherein the temperature of the substrate is maintained at about 250° C.
Claim 10
Dependent Claim
20 words
The method of claim 1, wherein said step of contacting is conducted in an inverted vertical chemical vapor deposition reactor.
Claim 11
Dependent Claim
16 words
A combination of a thin film and a substrate prepared by the method of claim 1.
Claim 12
Independent Claim
104 words
A method of depositing on a substrate a thin film of a material containing tellurium comprising the steps of: providing a reactant source vapor containing tellurium selected from the group consisting of a tellurophene and methyltellurol; mixing the reactant source vapor containing tellurium with a reactant source vapor containing another substance to be codeposited with the tellurium, the other substance being selected from the gorup consisting of cadmium, mercury, and combinations of cadmium and mercury; and introducing the mixture into an inverted vertical chemical vapor deposition reactor, wherein a substrate is maintained at a temperature of from about 200° C. to about 300° C.
Claim 13
Independent Claim
104 words
A method of depositing on a substrate a thin film of a material containing tellurium comprising the steps of: providing a reactant source vapor containing tellurium selected from the group consisting of a tellurophene and methyltellurol; mixing the reactant source vapor containing tellurium with a reactant source vapor containing another substance to be codeposited with the tellurium, the other substance being selected from the gorup consisting of cadmium, mercury, and combinations of cadmium and mercury; and introducing the mixture into an inverted vertical chemical vapor deposition reactor, wherein a substrate is maintained at a temperature of from about 200° C. to about 300° C.
Claim 14
Dependent Claim
26 words
The method of claim 11, wherein the face of the substrate upon which deposition occurs has a surface area of greater than about 1 square centimeter.
Claim 15
Dependent Claim
12 words
The method of claim 11, wherein the reactant source vapor is methyltellurol.
Claim 16
Dependent Claim
16 words
A combination of a thin film and a substrate prepared by the method of claim 11.
Claim 17
Independent Claim
180 words
A method for depositing on a substrate a thin film of a material containing tellurium, comprising the steps of: providing an organometallic reactant source of tellurium, the source being a substance that produces a molecular reactant source vapor containing tellurium and has a vapor pressure of at least 0.5 millimeters of mercury at ambient temperature, the reactant source vapor having a decomposition temperature, whereat elemental tellurium is released, at less than about 300° C. and having a molecular half life of less than about 1 second at a temperature of from about 200° C. to about 300° C.; mixing the reactant source vapor containing tellurium with a reactant source vapor containing another substance to be codeposited with the tellurium, the other substance being selected from the group consisting of elements from group II, group III, and group IV of the periodic table, and mixtures thereof; and contacting the mixture to a substrate maintained at a temperature of less than about 300° C., whereupon the reactant source vapors in the mixture react to codeposit a material containing tellurium upon the substrate.
Claim 18
Independent Claim
180 words
A method for depositing on a substrate a thin film of a material containing tellurium, comprising the steps of: providing an organometallic reactant source of tellurium, the source being a substance that produces a molecular reactant source vapor containing tellurium and has a vapor pressure of at least 0.5 millimeters of mercury at ambient temperature, the reactant source vapor having a decomposition temperature, whereat elemental tellurium is released, at less than about 300° C. and having a molecular half life of less than about 1 second at a temperature of from about 200° C. to about 300° C.; mixing the reactant source vapor containing tellurium with a reactant source vapor containing another substance to be codeposited with the tellurium, the other substance being selected from the group consisting of elements from group II, group III, and group IV of the periodic table, and mixtures thereof; and contacting the mixture to a substrate maintained at a temperature of less than about 300° C., whereupon the reactant source vapors in the mixture react to codeposit a material containing tellurium upon the substrate.
Claim 19
Dependent Claim
25 words
The method of claim 15, wherein the substance to be codeposited with tellurium is selected from the group consisting of cadmium, mercury, and combinations thereof.
Claim 20
Dependent Claim
21 words
The method of claim 15, wherein the source of tellurium is selected from the group consisting of a tellurophene and methyltellurol.
Claim 21
Dependent Claim
25 words
The method of claim 15, wherein said step of contacting is accomplished in an inverted vertical chemical vapor deposition reactor having a substrate facing downwardly.
Claim 22
Dependent Claim
20 words
The method of claim 15, wherein the substrate is selected from the group consisting of cadmium telluride and indium antimonide.
Claim 23
Dependent Claim
16 words
A combination of a thin film and a substrate prepared by the method of claim 15.
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