US4819244A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser device
Assignee: Sharp Corp
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Filing: 1986-06-04
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Granted: 1989-04-04
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Expires: 2006-06-04
Abstract
Abstract A V-channel inner stripe semiconductor laser device comprising a multi-layered growth crystal having an active layer for laser oscillation but no substrate, with a buffer layer formed on the multi-layered growth crystal thicker than all of the layers of the growth crystal, where the multi-layered growth crystal and buffer layer are sandwiched between an n-sided electrode and a p-sided electrode, wherein a pair of mesa-striped channels are formed outside of the V-channel to remove the outside of the optical waveguide formed in the active layer corresponding to the V-channel.
Inventors
- 👤 Saburo Yamamoto
- 👤 Hiroshi Hayashi
- 👤 Taiji Morimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 11:00
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/0206; H01S5/0217; H01S5/20; H01S5/22; H01S5/223; H01S5/2232; H01S5/227; H01S5/2275; H01S5/24
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
111 words
In a semiconductor laser device having a multi-layered growth crystal having an active layer therein for laser oscillation, but having no substrate; a buffer layer formed on said multi-layered growth crystal, the thickness of said buffer layer being thicker than that of all layers constituting said multi-layered growth crystal; a p-sided electrode and an n-sided electrode sandwiching therebetween the composite of said multi-layered growth crystal and said buffer layer, and having the structure of a V-channeled substrate inner stripe laser, the device wherein: a pair of mesa-striped channels are formed outside of the V-channel to remove the outside of the optical waveguide formed in said active layer corresponding to said V-channel.
Claim 2
Dependent Claim
111 words
In a semiconductor laser device having a multi-layered growth crystal having an active layer therein for laser oscillation, but having no substrate; a buffer layer formed on said multi-layered growth crystal, the thickness of said buffer layer being thicker than that of all layers constituting said multi-layered growth crystal; a p-sided electrode and an n-sided electrode sandwiching therebetween the composite of said multi-layered growth crystal and said buffer layer, and having the structure of a V-channeled substrate inner stripe laser, the device wherein: a pair of mesa-striped channels are formed outside of the V-channel to remove the outside of the optical waveguide formed in said active layer corresponding to said V-channel.
References Cited (Backward Citations)
JPS5696890A
Cited
JPS5885584A
Cited
JPS58148481A
Cited
EP0095895A2
Cited
US4592062A
Cited
JPS5987889A
Cited
EP0205338A2
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-04-03 | 1992-10-03 | 1993-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-04-03 | 1996-10-03 | 1997-04-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-04-03 | 2000-10-03 | 2001-04-04 | $7700.00 | Window Closed / Lapsed |