Patent US5647866A successfully refreshed from Google Patents.
EP0205338A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor laser device
Assignee: Sharp Corp
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Filing: 1986-06-10
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Granted: —
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Expires: 2006-06-10
Abstract
Abstract A semiconductor laser device has a multi-layered growth crystal (100) having an active layer (14) therein for laser oscillation, but having no substrate, a buffer layer (16) formed on said multi-layered growth crystal, the thickness of said buffer layer being thicker than that of all layers constituting said multi-layered growth crystal, and a p-sided electrode (18) and an n-sided electrode (17) sandwiching therebetween the composite of said multi-layered growth crystal (100) and said buffer layer (16).
Inventors
- 👤 Saburo Yamamoto
- 👤 Hiroshi Hayashi
- 👤 Taiji Morimoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 14:45
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/0206; H01S5/0217; H01S5/20; H01S5/22; H01S5/223; H01S5/2232; H01S5/227; H01S5/2275; H01S5/24
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
93 words
A semiconductor laser device comprising a multi-layered growth crystal (100) having an active layer (14) therein for laser oscillation and having a p-sided electrode and an n-sided electrode characterised in that the multi-layered growth crystal (100) has no substrate, and a buffer layer (16) is formed on said multi-layered growth crystal, the thickness of said buffer layer being thicker than that of all layers constituting said multi-layered growth crystal, the p-sided electrode (18) and an n-sided electrode (17) sandwiching therebetween the composite of said multi-layered growth crystal (100) and said buffer layer (16).
Claim 2
Dependent Claim
93 words
A semiconductor laser device comprising a multi-layered growth crystal (100) having an active layer (14) therein for laser oscillation and having a p-sided electrode and an n-sided electrode characterised in that the multi-layered growth crystal (100) has no substrate, and a buffer layer (16) is formed on said multi-layered growth crystal, the thickness of said buffer layer being thicker than that of all layers constituting said multi-layered growth crystal, the p-sided electrode (18) and an n-sided electrode (17) sandwiching therebetween the composite of said multi-layered growth crystal (100) and said buffer layer (16).
Claim 3
Dependent Claim
22 words
A semiconductor laser device according to claim 1, which is a substrate-free semiconductor laser device utilizing the structure of a VSIS laser.
Claim 4
Dependent Claim
39 words
A semiconductor laser device according to claim 2, wherein a pair of mesa-striped channels (20, 21) formed outside of the V-channel (19) to remove the outside of the optical waveguide formed in said active layer corresponding to said V-channel.
References Cited (Backward Citations)
No citation records indexed.
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