Semiconductor laser

Claim 1

A V-canneled substrate inner stripe (VSIS) semiconductor laser comprising: a first epitaxially grown layer (21); a second epitaxially grown layer (12) formed on said first epitaxially grown layer (21) with the intervention of a p-n junction formed between said first epitaxially grown layer (21) and said second epitaxially grown layer (12); a V-shaped groove formed in said second epitaxially grown layer (12) to a depth sufficient to reach said first epitaxially grown layer (21) through said p-n junction; a laser oscillation layer (13, 14, 15) formed on said second epitaxially grown layer (12), said laser oscillation layer (13, 14, 15) including an active layer (14); a supporting layer (16) formed on said laser oscillation layer (13, 14, 15), said supporting layer (16) being made of a compound semiconductor material including at least three components, wherein each component has a composition ratio suited for minimizing a stress applied to said active layer (14); a first electrode (17) formed on said supporting layer (16); and a second electrode (18) formed on the bottom surface of said first epitaxially grown layer (21).

Claim 5

A method for manufacturing a V-channeled substrate inner stripe (VSIS) semiconductor laser comprising the steps of: providing a substrate (11); epitaxially growing a first epitaxially grown layer (21) on said substrate (11); epitaxially growing a second epitaxially grown layer (12) on said first epitaxially grown layer (21) with the intervension of a p-n junction formed between said first epitaxially grown layer (21) and said second epitaxially grown layer (12); forming a V-shaped groove (19) in said second epitaxially grown layer (12) to a depth sufficient to reach said first epitaxially grown layer (21) through said p-n junction; depositing a laser oscillation layer (13, 14, 15) on said second epitaxially grown layer (12); depositing a supporting layer (16) on said laser oscillation layer (13, 14, 15), said supporting layer (16) being made of a compound semiconductor- material including at least three components with a composition ratio suited for minimizing a stress applied to said laser oscillation layer (13, 14, 15); etching said substrate (11), thereby removing said substrate (11) from said first epitaxially grown layer (21); and forming electrodes on said supporting layer (16) and on the bottom surface of said first epitaxially grown layer (21).

Claim 6

A method for manufacturing a V-channeled substrate inner stripe (VSIS) semiconductor laser comprising the steps of: providing a substrate (11); epitaxially growing a first epitaxially grown layer (21) on said substrate (11); epitaxially growing a second epitaxially grown layer (12) on said first epitaxially grown layer (21) with the intervension of a p-n junction formed between said first epitaxially grown layer (21) and said second epitaxially grown layer (12); forming a V-shaped groove (19) in said second epitaxially grown layer (12) to a depth sufficient to reach said first epitaxially grown layer (21) through said p-n junction; depositing a laser oscillation layer (13, 14, 15) on said second epitaxially grown layer (12); depositing a supporting layer (16) on said laser oscillation layer (13, 14, 15), said supporting layer (16) being made of a compound semiconductor- material including at least three components with a composition ratio suited for minimizing a stress applied to said laser oscillation layer (13, 14, 15); etching said substrate (11), thereby removing said substrate (11) from said first epitaxially grown layer (21); and forming electrodes on said supporting layer (16) and on the bottom surface of said first epitaxially grown layer (21).

Claim 7

A method for manufacturing a V-channeled substrate inner stripe (VSIS) semiconductor laser comprising the steps of: providing a GaAs substrate (11); forming an etching stop layer (20) on said GaAs substrate (11); depositing a p-GaAs layer (21) on said etching stop layer (20); depositing a current blocking layer (12) on said p-GaAs layer (21); forming a V-shaped groove (19) in said current blocking layer (12) to a depth sufficient to reach said p-GaAs layer (21); depositing a p-Ga 1-x Al x As cladding layer (13) on said current blocking layer (12); depositing a p-Ga 1-x Al y As active layer (14) on said p-Ga 1-x Al x As cladding layer (13); depositing an n-Ga 1-z Al z As cladding layer (15) on said p-Ga 1-y Al y As active layer (14); depositing an n-Ga 1-q Al q As cap layer (16) on said n-Ga 1-z Al z As cladding layer (15), wherein the AlAs mole fraction (z) is selected to minimize a stress applied to said p-Ga 1-y Al y As active layer (14); etching said GaAs substrate (11) to remove said GaAs substrate (11) from said etching stop layer (20); etching said etching stop layer (20) to remove said etching stop layer (20) from said p-GaAs layer (21); and forming electrodes (17, 18) on said n-Ga 1-q Al q As cap layer (16) and on the bottom surface of said p-GaAs layer (21), respectively.

Claim 8

A method for manufacturing a V-channeled substrate inner stripe (VSIS) semiconductor laser comprising the steps of: providing a GaAs substrate (11); forming an etching stop layer (20) on said GaAs substrate (11); depositing a p-GaAs layer (21) on said etching stop layer (20); depositing a current blocking layer (12) on said p-GaAs layer (21); forming a V-shaped groove (19) in said current blocking layer (12) to a depth sufficient to reach said p-GaAs layer (21); depositing a p-Ga 1-x Al x As cladding layer (13) on said current blocking layer (12); depositing a p-Ga 1-x Al y As active layer (14) on said p-Ga 1-x Al x As cladding layer (13); depositing an n-Ga 1-z Al z As cladding layer (15) on said p-Ga 1-y Al y As active layer (14); depositing an n-Ga 1-q Al q As cap layer (16) on said n-Ga 1-z Al z As cladding layer (15), wherein the AlAs mole fraction (z) is selected to minimize a stress applied to said p-Ga 1-y Al y As active layer (14); etching said GaAs substrate (11) to remove said GaAs substrate (11) from said etching stop layer (20); etching said etching stop layer (20) to remove said etching stop layer (20) from said p-GaAs layer (21); and forming electrodes (17, 18) on said n-Ga 1-q Al q As cap layer (16) and on the bottom surface of said p-GaAs layer (21), respectively.

Claim 12

A method of manufacturing a VSIS semi-conductor laser in which a plurality of layers (21,12,13,14,15, 16) are successively formed on a support layer (11), characterised in that the support layer (11) is then removed whereby one (16) of the successively formed layers then forms the major support layer of the laser.

Claim 13

A method of manufacturing a VSIS semi-conductor laser in which a plurality of layers (21,12,13,14,15, 16) are successively formed on a support layer (11), characterised in that the support layer (11) is then removed whereby one (16) of the successively formed layers then forms the major support layer of the laser.