Semiconductor laser

Abstract

Abstract PURPOSE:To obtain a semiconductor laser of buried hetero structure of high manufacturing yield by forming two parallel grooves on a multilayer film semiconductors formed by sequentially laminating on a semiconductor substrate and sequentially forming a current block layer in the groove. CONSTITUTION:A buffer layer 11, an active layer 12, a clad layer 13 and a cap layer 14 are grown on a substrate 10, thereby forming a double hetero structure (DH) wafer. An SiO2 film is formed on the wafer, and parallel two grooves 21, 22 are formed. Then, crystal growth is performed to substantially bury two grooves with the first current block layer 31 and the second current block layer 32, an SiO2 film 30 is used to insulate except the surface of a stripe 23 interposed between the grooves 21 and 22, an Au-Ge-Ni n type side electrode layer 42 is deposited at the side of a P-side electrode layer 41 of Au-Zn and n type InP substrate 10, and is alloyed to complete the manufacture of a wafer. the reproducibility and uniformity are improved as compared with the conventional buried structure semiconductor over the all steps of etching at the element manufacturing time, burying crystal growth, mounting, lead wirng mounting, thereby obtaining high semiconductor laser element of high manufacturing yield.

Inventors

• 👤 Isao Kobayashi
• 👤 功郎 小林
• 👤 Ikuo Mito
• 👤 郁夫 水戸

Bibliographic Details