Manufacturing semiconductor laser

Abstract

Abstract PURPOSE: To improve yield rates and to enhance reproducibility in production by growing anothr layer on a layer which is to become active region, providing parallel small grooves on both sides of the active layer, and forming a growing layer in the groove portions again. CONSTITUTION: On a substrate 11 comprising n-type GaAs, an n-type Al 0.3 Ga 0.7 As layer 12, an n-type Al 0.1 Ga 0.9 As layer 13, a p-type GaAs active layer 14, a p- type Al 0.3 Ga 0.7 As layer 15 are epitaxially grown. On the upper-side surface of the layer 15, a mask is provided so that grooves whose width is 20μm are selectively etched on both sides of a long and narrow area of 5μm, and the layer 15 is etched unitl the layer 12 is reached. After the photoresist has been removed, an n-type Al 0.3 Ga 0.7 As layer 16 is grown in the grooves. In the process of forming the stripe- shaped groove whose width is 100μm and less, the conditions can readily established, the control is excellent, and the same characteristics can be found in the crystal growing. Therefore, the yield rates are high and the reproducibility is good. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Isamu Sakuma

Bibliographic Details