Patent US4814837A successfully refreshed from Google Patents.
US4814837A
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Quantum well electron barrier diode
Assignee: United States Department of the Navy
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Filing: 1986-03-13
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Granted: 1989-03-21
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Expires: 2006-03-13
Abstract
Abstract A quantum well electron barrier diode comprising a substrate, a first buffer layer on the substrate, a superlattice structure on the first buffer layer, a second buffer layer on the superlattice structure, a contacting layer on the second buffer layer and first and second ohmic contacts attached to the contacting layer and substrate respectively. The superlattice structure comprises a sequence of a plurality of high energy gap barrier layers interleaved with a plurality of low energy gap wells. The sequence is repeated until the desired thickness is reached. Current flows perpendicular to the layers.
Inventors
- 👤 Steven W. Kirchoefer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:47
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8164; H10D8/00; H10D8/825
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
134 words
A superlattice comprising one or more periodic semiconductor structures, each structure of said one or more periodic structures comprising: a plurality of low energy gap semiconductor layers; a plurality of high energy gap semiconductor layers interleaved with said plurality of low energy semiconductor layers; said interleaved layers being effective to create in said superlattice a plurality of potential energy wells along the length of said high and low energy gap layers; each well of said plurality of wells being of sequentially decreasing width along said length; wherein said superlattice is adapted to prevent any two of said pluraltiy of wells from having electron quantum energy states that lie within a Kronig-Penny miniband width of one another; wherein said superlattice is effective to rectify electric current across said low and high energy gap semiconductor layers.
Claim 2
Dependent Claim
134 words
A superlattice comprising one or more periodic semiconductor structures, each structure of said one or more periodic structures comprising: a plurality of low energy gap semiconductor layers; a plurality of high energy gap semiconductor layers interleaved with said plurality of low energy semiconductor layers; said interleaved layers being effective to create in said superlattice a plurality of potential energy wells along the length of said high and low energy gap layers; each well of said plurality of wells being of sequentially decreasing width along said length; wherein said superlattice is adapted to prevent any two of said pluraltiy of wells from having electron quantum energy states that lie within a Kronig-Penny miniband width of one another; wherein said superlattice is effective to rectify electric current across said low and high energy gap semiconductor layers.
Claim 3
Dependent Claim
23 words
The superlattice of claim 1, wherein the number of said plurality of potential energy wells is in the range between two and five.
Claim 4
Dependent Claim
19 words
The superlattice of claim 2, wherein said one or more periodic semiconductor structures is a plurality of said structures.
Claim 5
Dependent Claim
19 words
The superlattice of claim 1, wherein said one or more periodic semiconductor structures is a plurality of said structures.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-03-20 | 1992-09-19 | 1993-03-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-03-20 | 1996-09-19 | 1997-03-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-03-20 | 2000-09-19 | 2001-03-21 | $7700.00 | Window Closed / Lapsed |