Semiconductor device

Claim 2

A semiconductor device comprising a superlattice semiconductor portion having first and second ends and including a plurality of laminated pairs of semiconductor thin films arranged along an axis perpendicular to the interface thereof thereby forming a potential profile along said axis determined by the stepped differences between the band edge energies of the thin films forming each of said pairs, said potential profile having virtual miniband and minigap energy states associated therewith and being defined by at least one of the thickness, chemical composition and dopant materials of said thin films, at least one of the thickness, chemical composition and dopant materials of said thin films being modulated in the direction of said axis whereby said miniband and minigap energy states are monotonically changed in the direction of said axis for every pair of said thin films; and electrodes coupled to the first and second ends of said superlattice semiconductor portion for applying an electric field thereacross.

Claim 3

A semiconductor device according to claim 1, wherein the thickness of each pair of said semiconductor thin films changes at the interfaces thereof.

Claim 4

A semiconductor device according to claim 1, wherein the chemical compositions of said pairs of semiconductor thin films vary sequentially along said axis, the potential height of one pair being different in said axial direction from the potential height of an adjacent pair.

Claim 5

A semiconducotr device according to claim 1, wherein the ratios of the thicknesses of the thin films in sequentially disposed pairs are varied along said axis.

Claim 6

A semiconductor device according to claim 2, wherein the ratios of the thicknesses of the thin films in said sequentially disposed pairs are varied along said axis.

Claim 7

A semiconductor device according to claim 3, wherein the ratios of the thicknesses of the thin films in said sequentially disposed pairs are varied along said axis.

Claim 8

A semiconductor device according to claim 1, wherein a homogeneous semiconductor layer is interposed between said superlattice semiconductor portion and at least one of said electrodes.

Claim 9

A semiconductor device according to claim 7, wherein the thickness of each pair of said semiconductor thin films changes at the interfaces thereof.

Claim 10

A semiconductor device according to claim 7, wherein the chemical compositions of said pairs of semiconductor thin films vary sequentially along said axis, the potential height of one pair being different in said axial direction from the potential height of an adjacent pair.

Claim 11

A semiconductor device according to claim 7, wherein the ratios of the thicknesses of the thin films in said sequentially disposed pairs are varied along said axis.

Claim 12

A semiconductor device according to claim 7, wherein a low carrier concentration semiconductor layer, the carrier concentration of which is lower than that of said homogeneous semiconductor layer, is interposed between said homogeneous semiconductor layer and said superlattice semiconductor portion.

Claim 13

A semiconductor device according to claim 11, wherein the thickness of each pair of said semiconductor thin films changes at the semiconductor interfaces thereof.

Claim 14

A semiconductor device according to claim 11, wherein the chemical compositions of said pairs of semiconductor thin films vary sequentially along said axis, the potential height of one pair being different in said axial direction from the potential height of an adjacent pair.

Claim 15

A semiconductor device according to claim 11, wherein the ratios of the thicknesses of the thin films in said sequentially disposed pairs are varied along said axis.

Claim 16

A semiconductor device comprising a superlattice semiconductor portion having first and second ends including a plurality of laminated pairs of semiconductor thin films arranged along an axis perpendicular to the interfaces thereof forming a potential profile along said axis determined by the stepped differences between the band edge energies of the thin films forming each of said pairs, said potential profile having virtual miniband and minigap energy states associated therewith and being defined by at least one of the thickness, chemical composition and dopant materials of said thin films, at least one of the thickness, chemical composition and dopant materials of said thin films being modulated in the direction of said axis whereby said miniband and minigap energy states are monotonically changed in the direction of said axis for every pair of said thin films; electrodes coupled to the first and second ends of said superlattice semiconductor portion for applying an electric field thereacross; and an anti-reflection portion interposed between said superlattice semiconductor portion and at least one of said electrodes, one end portion of said anti-reflection portion in the vicinity of said superlattice semiconductor portion having a potential profile which is similar to the potential profile formed by said superlattice semiconductor portion, the other end of said anti-reflection portion having a uniform potential profile and the middle region between said one end and the other end of said anti-reflection portion having a potential profile which resides in the middle of said potential profiles in the end portions of said anti-reflection portion.

Claim 17

A semiconductor device comprising a superlattice semiconductor portion having first and second ends including a plurality of laminated pairs of semiconductor thin films arranged along an axis perpendicular to the interfaces thereof forming a potential profile along said axis determined by the stepped differences between the band edge energies of the thin films forming each of said pairs, said potential profile having virtual miniband and minigap energy states associated therewith and being defined by at least one of the thickness, chemical composition and dopant materials of said thin films, at least one of the thickness, chemical composition and dopant materials of said thin films being modulated in the direction of said axis whereby said miniband and minigap energy states are monotonically changed in the direction of said axis for every pair of said thin films; electrodes coupled to the first and second ends of said superlattice semiconductor portion for applying an electric field thereacross; and an anti-reflection portion interposed between said superlattice semiconductor portion and at least one of said electrodes, one end portion of said anti-reflection portion in the vicinity of said superlattice semiconductor portion having a potential profile which is similar to the potential profile formed by said superlattice semiconductor portion, the other end of said anti-reflection portion having a uniform potential profile and the middle region between said one end and the other end of said anti-reflection portion having a potential profile which resides in the middle of said potential profiles in the end portions of said anti-reflection portion.

Claim 18

A semiconductor device according to claim 7, wherein an anti-reflection portion is disposed adjacent to said superlattice semiconductor portion, and said homogeneous semiconductor layer is interposed between said anti-reflection portion and one of said electrodes.

Claim 19

A semiconductor device according to claim 7, wherein an anti-reflection portion is interposed between said homogeneous semiconductor layer and one of said electrodes.

Claim 20

A semiconductor device according to claim 15, wherein said anti-reflection portion is formed by a superlattice semiconductor including a plurality of laminated pairs of semiconductor thin films arranged along an axis perpendicular to the interfaces thereof and forming a potential profile along said axis determined by the stepped differences between the band edge energies of the thin films forming each of said pairs, said potential profile having virtual miniband and minigap energy states associated therewith and being defined by at least one of the thickness, chemical composition and dopant materials of said thin films, at least one of the thickness, chamical composition and dopant materials of said thin films being modulated in the direction of said axis whereby said miniband and minigap energy states are monotonically changed in the direction of said axis for every pair of said thin films.

Claim 21

A semiconductor device according to claim 18, wherein the thickness of each pair of said semiconductor thin films changes at the semiconductor interfaces thereof.

Claim 22

A semiconductor device according to claim 18, wherein the chemical compositions of said pairs of semiconductor thin films vary sequentially along said axis, the potential height of one pair being different in said axial direction from the potential height of an adjacent pair.

Claim 23

A semiconductor device according to claim 18, wherein the ratios of the thicknesses of the thin films in said sequentially disposed pairs vary along said axis.

Claim 24

A semiconductor device according to claim 19, wherein the ratios of the thicknesses of the thin films in said sequentially disposed pairs vary along said axis.

Claim 25

A semiconductor device according to claim 20, wherein the ratios of the thicknesses of the thin films in said sequentially disposed pairs vary along said axis.

Claim 26

A semiconductor device according to claim 18, wherein said superlattice semiconductor portion is formed by a pair of different semiconductor thin films.

Claim 27

A semiconductor device according to claim 16, wherein said anti-reflection portion includes a semiconductor portion which is disposed adjacent to said homogeneous semiconductor layer, the composition of said semiconductor portion changing continuously.

Claim 28

A semiconductor device according to claim 25, wherein said composition of said semiconductor portion gradually changes in a graded manner.