Transistor delay circuits

Claim 2

A signal delay circuit comprising an input terminal, an output terminal, first and second circuits arranged parallel to each other and disposed between said input and output terminals, said first circuit having serially connected first and second transistors and said second circuit having a third transistor, a fourth transistor connected from the common point between said first and second transistors to said second circuit, means for applying a signal to said parallelly arranged first and second circuits, turning on said first, second and fourth transistors, and means for selectively turning on said third transistor.

Claim 3

A signal delay circuit as set forth in claim 1 wherein said first, second and fourth transistors are N-channel field effect transistors and said third transistor is a P-channel field effect transistor.

Claim 4

A signal delay circuit as set forth in claim 1 wherein said first, second and fourth transistors are P-channel field effect transistors and said third transistor is an N-channel field effect transistor.

Claim 5

A signal delay circuit as set forth in claim 2 further including an inverter having an input and an output, said signal being derived from the output of said inverter and said turning on means being connected to the input of said inverter.

Claim 6

A signal delay circuit as set forth in claim 1 wherein said fourth transistor is connected to said second circuit at a point between said third transistor and said output terminal.

Claim 7

A signal delay circuit as set forth in claim 5 wherein said second circuit has a fifth transistor serially connected with said third transistor and said fourth transistor is connected to said second circuit at a common point between said third and fifth transistors.

Claim 8

A signal delay circuit comprising first and second circuits coupled in parallel to each other, said first circuit having serially connected first and second transistors of a given type conductivity and said second circuit having a third transistor of a conductivity type opposite to that of said given type conductivity, a fourth transistor connected from the common point between said first and second transistors to said second circuit, means for applying a given signal to said first and second circuits, and means for applying a signal which is the complement of said given signal to the control electrodes of said transistors.

Claim 9

A signal delay circuit comprising first and second circuits coupled in parallel to each other, said first circuit having serially connected first and second transistors of a given type conductivity and said second circuit having a third transistor of a conductivity type opposite to that of said given type conductivity, a fourth transistor connected from the common point between said first and second transistors to said second circuit, means for applying a given signal to said first and second circuits, and means for applying a signal which is the complement of said given signal to the control electrodes of said transistors.

Claim 10

A signal delay circuit as set forth in claim 7 wherein said first, second and fourth transistors are N-channel field effect transistors and said third transistor is a P-channel field effect transistor.

Claim 11

A signal delay circuit as set forth in claim 7 wherein said first, second and fourth transistors are P-channel field effect transistors and said third transistor is an N-channel field effect transistor.

Claim 12

A signal delay circuit as set forth in claim 5 further including a first inverter having an input and an output, said signals being derived from the input and output of said inverter.

Claim 13

A signal delay circuit as set forth in claim 10 wherein the output of said inverter is coupled to said first and second circuits and the input of said inverter is coupled to the control electrodes of said transistors.

Claim 14

A signal delay circuit as set forth in claim 10 wherein the input of said inverter is coupled to said first and second circuits and the output of said inverter is coupled to the control electrodes of said transistors.

Claim 15

A signal delay circuit as set forth in claim 12 further including an input terminal and a second inverter having an input and an output, the input of said second inverter being connected to said input terminal and the output of said second inverter being connected to the input of said first inverter.

Claim 16

A signal delay circuit as set forth in claim 13 further including an output terminal and a third inverter having an input and an output, said first and second circuits being connected at one end to the input of said first inverter and at the other end to the input of said third inverter, the output of said third inverter being connected to said output terminal.

Claim 17

A signal delay cirucit as set forth in claim 14 wherein said inverters include P-channel and N-channel field effect transistors.

Claim 18

A signal delay circuit comprising first and second circuits connected in parallel with each other, said first circuit including serially connected first and second transistors of a given type conductivity and said second circuit including serially connected third and fourth transistors of a conductivity type opposite to that of said given type conductivity, a fifth transistor of said given type conductivity connected from the common point between said first and second transistors to the common point between said third and fourth transistors, a sixth transistor of said opposite type conductivity connected from the common point between said first and second transistors to the common point between said third and fourth transistors, means for applying a given signal to said parallelly arranged first and second circuits, and means for applying a signal which is the complement of said given signal to the control electrodes of said transistors.

Claim 19

A signal delay circuit comprising first and second circuits connected in parallel with each other, said first circuit including serially connected first and second transistors of a given type conductivity and said second circuit including serially connected third and fourth transistors of a conductivity type opposite to that of said given type conductivity, a fifth transistor of said given type conductivity connected from the common point between said first and second transistors to the common point between said third and fourth transistors, a sixth transistor of said opposite type conductivity connected from the common point between said first and second transistors to the common point between said third and fourth transistors, means for applying a given signal to said parallelly arranged first and second circuits, and means for applying a signal which is the complement of said given signal to the control electrodes of said transistors.

Claim 20

A signal delay circuit as set forth in claim 16 wherein said first, second and fifth transistors are N-channel field effect transistors and said third, fourth and sixth transistors are P-channel field effect transistors.

Claim 21

A signal delay circuit as set forth in claim 15 including an inverter having an input and an output, said signals being derived from the input and output of said inverter.

Claim 22

A signal delay circuit as set forth in claim wherein the output of said inverter is coupled to said parallelly arranged first and second circuits and the input of said inverter is coupled to the control electrodes of said transistors.

Claim 23

A signal delay circuit as set forth in claim 18 wherein the input of said inverter is coupled to said first and second circuits and the output of said inverter is coupled to the control electrodes of said transistors.

Claim 24

A signal delay circuit as set forth in claim 16 wherein said first circuit has a first resistance having a first value and said second circuit has a second resistance having a second value which differs from that of the first value, and each of said transistors is a field effect transistor having source/drain regions forming a capacitive P-N junction with a semiconductor substrate, said P-N junctions forming a first capacitor having a first value when said transistors of said given type conductivity are turned on and said P-N junctions forming a second capacitor having a second value when said transistors of said opposite type conductivity are turned on which differs from said first capacitor value.

Claim 25

A signal delay circuit comprising an input terminal, an output terminal, a first series circuit including first and second N-channel field effect transistors having a first common node therebetween connected between said input and output terminals, a third N-channel field effect transistor having one end thereof including said first common node, said first common node being an N-type conductivity diffusion region forming a P-N junction with a P-type semiconductor substrate, a second series circuit including first and second P-channel field effect transistors having a second common node therebetween connected between said input and output terminals, a third P-channel field effect transistor having one end thereof including said second common node, said second common node being a P-type conductivity diffusion region forming a P-N junction with an N-type semiconductor substrate, means for connecting the other end of said third P-channel transistor to said first common node and for connecting the other end of said third N-channel transistor to said second common node, means for applying a given signal to said input terminal, and means for applying a signal which is the complement of said given signal to the control electrodes of said transistors.

Claim 26

A signal delay circuit comprising an input terminal, an output terminal, a first series circuit including first and second N-channel field effect transistors having a first common node therebetween connected between said input and output terminals, a third N-channel field effect transistor having one end thereof including said first common node, said first common node being an N-type conductivity diffusion region forming a P-N junction with a P-type semiconductor substrate, a second series circuit including first and second P-channel field effect transistors having a second common node therebetween connected between said input and output terminals, a third P-channel field effect transistor having one end thereof including said second common node, said second common node being a P-type conductivity diffusion region forming a P-N junction with an N-type semiconductor substrate, means for connecting the other end of said third P-channel transistor to said first common node and for connecting the other end of said third N-channel transistor to said second common node, means for applying a given signal to said input terminal, and means for applying a signal which is the complement of said given signal to the control electrodes of said transistors.

Claim 27

A signal delay circuit as set forth in claim 22 wherein said N-type semiconductor substrate is an N-well disposed within a P-type semiconductor substrate.