Patent US4812200A successfully refreshed from Google Patents.
US4812200A
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Method for generating resist structures
Assignee: Siemens AG
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Filing: 1988-03-10
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Granted: 1989-03-14
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Expires: 2008-03-10
Abstract
Abstract In generating resist structures according to bilayer technology a series of requirements is made of silicon-containing positive resists. The new method is intended to ensure, inter alia, the profile retention respectively the ability of the resist structures to maintain precise dimensions. According to the invention vinyl phenol-vinyl silane copolymers are used as resist materials.
Inventors
- 👤 Siegfried Birkle
- 👤 Recai Sezi
- 👤 Hans-Dieter Feucht
- 👤 Rainer Leuschner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 05:13
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0757; G03F7/0758
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
113 words
A method for generating a resist structure through the use of a silicon-containing positive resist, and a photoreactive component, in combination with masking and irradiating with UV-radiation, comprising: applying a resist material of a vinyl phenolvinyl silane copolymer having formula I ##STR3## wherein m+n is 1 and n is maximally 0.55; X is H, CH 3 , C 2 H 5 , or halogen; R 1 is H, CH 3 , C 2 H 5 , or halogen; R 2 is H, CH 3 , C 2 H 5 , C 3 H 7 , or C 6 H 5 ; said X, R 1 , and R 2 being identical or different.
Claim 2
Independent Claim
113 words
A method for generating a resist structure through the use of a silicon-containing positive resist, and a photoreactive component, in combination with masking and irradiating with UV-radiation, comprising: applying a resist material of a vinyl phenolvinyl silane copolymer having formula I ##STR3## wherein m+n is 1 and n is maximally 0.55; X is H, CH 3 , C 2 H 5 , or halogen; R 1 is H, CH 3 , C 2 H 5 , or halogen; R 2 is H, CH 3 , C 2 H 5 , C 3 H 7 , or C 6 H 5 ; said X, R 1 , and R 2 being identical or different.
Claim 3
Dependent Claim
19 words
A method according to claim 1, wherein the resist material is a copolymer of vinyl phenol and vinyl trimethylsilane.
Claim 4
Dependent Claim
21 words
A method according to claim 1 or 2, further comprising adding a quinone diazide to the resist material as photoreactive component.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-03-13 | 1992-09-12 | 1993-03-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-03-13 | 1996-09-12 | 1997-03-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-03-13 | 2000-09-12 | 2001-03-14 | $7700.00 | Window Closed / Lapsed |