US4808512A
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Process of deep ultra-violet imaging lithographic resist compositions
Assignee: Avantor Performance Materials LLC
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Filing: 1988-03-18
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Granted: 1989-02-28
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Expires: 2008-03-18
Abstract
Abstract Photosensitive solubilization inhibitor compounds of the formula <IMAGE> wherein: x is an integer equal to the valence or functionality of the radical R, and R is a radical selected from the group consisting of the residue of a mono-, di-, tri- or polyfunctional alkanol or silicon-containing alkanol and is attached to the oxy atom of the carboxyl group through a carbon atom. Positive deep ultra-violet photoresists which are base developable comprise base soluble polymers and the photosensitive solubilization inhibition agents. Lithographic resist images are formed with the deep ultra-violet photoresists upon exposure to deep ultra-violet light.
Inventors
- 👤 George Schwartzkopf
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 02:07
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/016; G03F7/0163; C; C07; C07F; C07F7/00; C07F7/02; C07F7/08; C07F7/0803; C07F7/081
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
169 words
A process for forming a lithographic resist image comprising image-wise exposing a film cast on a substrate to deep UV light of less than about 300 nm and dissolving the exposed portion of said film with a basic solution, wherein the film cast on the substrate comprises a film cast from a castable resist composition comprising: (a) a lithographic resist composition comprising a base soluble film-forming polymer and in admixture therewith a photosensitive solubilization inhibiting amount of a photosensitive solubilization inhibition agent which is a 4-diazo-3,5-dioxocyclohexane carboxylic acid ester compound of the formula ##STR3## wherein: x is an integer of from 1 to 3 and equal to the valence or functionality of the radical R, and R is a radical selected from the group consisting of the residue of a mono-, di-, tri- functional alkanol or silicon-containing alkanol and is attached to the oxy atom of the caboxyl group through a carbon atom, in (b) a film-forming solvent having a boiling point of from about 120° to 210° C.
Claim 2
Dependent Claim
169 words
A process for forming a lithographic resist image comprising image-wise exposing a film cast on a substrate to deep UV light of less than about 300 nm and dissolving the exposed portion of said film with a basic solution, wherein the film cast on the substrate comprises a film cast from a castable resist composition comprising: (a) a lithographic resist composition comprising a base soluble film-forming polymer and in admixture therewith a photosensitive solubilization inhibiting amount of a photosensitive solubilization inhibition agent which is a 4-diazo-3,5-dioxocyclohexane carboxylic acid ester compound of the formula ##STR3## wherein: x is an integer of from 1 to 3 and equal to the valence or functionality of the radical R, and R is a radical selected from the group consisting of the residue of a mono-, di-, tri- functional alkanol or silicon-containing alkanol and is attached to the oxy atom of the caboxyl group through a carbon atom, in (b) a film-forming solvent having a boiling point of from about 120° to 210° C.
Claim 3
Dependent Claim
22 words
A process according to claim 1 wherein the solvent comprises from about 50 to about 95% by weight of the castable composition.
Claim 4
Dependent Claim
26 words
A process according to claim 2 wherein the solvent is selected from the group consisting of diglyme, methyl isobutyl ketone, 2-methoxyethanol, 2-ethoxyethanol, 2-methoxyethyl acetate and γ-butyrolactone.
Claim 5
Dependent Claim
29 words
A process according to claim 1 wherein the base soluble film-forming polymer is a resin selected from the group consisting of phenol-formaldehyde, cresol-formaldehyde, poly(vinylphenol) and poly(methyl methacrylate-methacrylic acid) resins.
Claim 6
Dependent Claim
33 words
A process according to claim 1 wherein the solubilizing agent is present in an amount of from about 5 to about 50% by weight based on the combined weight of polymer and agent.
Claim 7
Dependent Claim
28 words
A process according to claim 5 wherein x is an integer of from 1 to 3 and the R radical contains from 1 to about 20 carbon atoms.
Claim 8
Dependent Claim
19 words
A process according to claim 6 wherein the R radical contains from about 2 to about 6 carbon atoms.
Claim 9
Dependent Claim
12 words
A process according to claim 5 wherein the ester compound is 2-(trimethylsilylethyl)-4-diazo-3,5-dioxocyclohexane-carboxylate.
Claim 10
Dependent Claim
13 words
A process according to claim 5 wherein the ester compound is 2,2-bis-(4-diazo-3,5-dioxocyclohexane-1-carbonyloxy methyl)-butane.
Claim 11
Dependent Claim
12 words
A process according to claim 5 wherein the ester compound is 1,6-bis-(4-diazo-3,5-dioxocyclohexane-1-carbonyloxy)-hexane.
Claim 12
Dependent Claim
12 words
A process according to claim 5 wherein the ester compound is 1,5-bis-(4-diazo-3,5-dioxocyclohexane-1-carbonyloxy)-3,3-dimethyl-3-silapentane.
Claim 13
Dependent Claim
13 words
A process according to claim 5 wherein the ester compound is 1,1,1-tris-(4-diazo-3,5-dioxocyclohexane-1-carbonyloxy methyl)propane.
Claim 14
Dependent Claim
15 words
A process according to claim 5 wherein the polymer is a poly (methyl methacrylate-methacrylic acid).
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-02-28 | 1992-08-29 | 1993-02-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-02-28 | 1996-08-29 | 1997-02-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-02-28 | 2000-08-29 | 2001-02-28 | $7700.00 | Window Closed / Lapsed |