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US4806502A
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Method for doping semi-conductor material during epitaxial growth
Assignee: Daimler Benz AG
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Filing: 1987-12-09
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Granted: 1989-02-21
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Expires: 2007-12-09
Abstract
Abstract A method for producing a doped semiconductor layer on a semiconductor substrate, employing particle radiation, including the steps of initially applying an adsorbed layer containing a doping substance to the semiconductor substrate; controlling the concentration of the doping substance in the adsorbed layer; growing a semiconductor layer having a crystal lattice structure on the substrate; performing a secondary implantation operation for incorporating the doping substance in the crystal lattice of the semiconductor layer; and performing a heat treatment for removing crystal lattice imperfections and incorporating the doping substance into crystal lattice positions.
Inventors
- 👤 Helmut Jorke
- 👤 Horst Kibbel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:36
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B23/00; C30B23/002; H; H10; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3214; H10P14/3222; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/36; H10P14/3602; Y; Y10; Y10S; Y10S148/00; Y10S148/169
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
110 words
A method for producing a doped semiconductor layer on a semiconductor substrate employing particle radiation, the method comprising: (a) initially applying an adsorbed layer containing a doping substance of a desired concentration to the semiconductor substrate; (b) controlling the concentration of the doping substance in the adsorbed layer; (c) epitaxially growing a semiconductor layer having a crystal lattice structure on said semiconductor substrate; (d) during step (e), causing a secondary implantation operation for incorporating said doping substance into the crystal lattice structure of said semiconductor layer; and (e) performing a heat treatment for removing crystal lattice imperfections and incorporating the doping substance into crystal lattice positions of said semiconductor layer.
Claim 2
Independent Claim
110 words
A method for producing a doped semiconductor layer on a semiconductor substrate employing particle radiation, the method comprising: (a) initially applying an adsorbed layer containing a doping substance of a desired concentration to the semiconductor substrate; (b) controlling the concentration of the doping substance in the adsorbed layer; (c) epitaxially growing a semiconductor layer having a crystal lattice structure on said semiconductor substrate; (d) during step (e), causing a secondary implantation operation for incorporating said doping substance into the crystal lattice structure of said semiconductor layer; and (e) performing a heat treatment for removing crystal lattice imperfections and incorporating the doping substance into crystal lattice positions of said semiconductor layer.
Claim 3
Dependent Claim
32 words
The method as defined in claim 1, wherein step (d) comprises directing particle radiation composed of neutral atoms, neutral molecules and accelerated ionized host lattice atoms of the substrate toward said substrate.
Claim 4
Dependent Claim
22 words
The method as defined in claim 2, wherein the particle radiation has an energy in the range of 10 to 10,000 eV.
Claim 5
Dependent Claim
22 words
The method as defined in claim 3, wherein the particle radiation has an energy in the range of 100 to 1000 eV.
Claim 6
Dependent Claim
26 words
The method as defined in claim 1, wherein step (d) comprises applying to the semiconductor layer particle radiation having an energy of 10 to 10,000 eV.
Claim 7
Dependent Claim
19 words
The method as defined in claim 5, wherein the particle radiation has an energy of 100 to 1000 eV.
Claim 8
Dependent Claim
38 words
The method as defined in claim 1, wherein the semiconductor layer is comprised of a semiconductor material, and wherein the semiconductor material and the doping substance are selected such that the adsorbed layer is maintained during step (c).
Claim 9
Dependent Claim
25 words
The method as defined in claim 1, wherein the substrate is of silicon and the doping substance includes at least one of antimony and gallium.
Claim 10
Dependent Claim
24 words
The method as defined in claim 1, wherein step (b) comprises controlling the temperature of the surface of the semiconductor layer during step (c).
Claim 11
Dependent Claim
23 words
The method as defined in claim 9, wherein step (b) further comprises replenishing the doping substance in the adsorbed layer during step (c).
Claim 12
Dependent Claim
22 words
The method as defined in claim 1, wherein step (b) comprises replenishing the doping substance in the adsorbed layer during step (c).
Claim 13
Independent Claim
197 words
A method for producing a doped semiconductor layer on a semiconductor substrate employing particle radiation, the method comprising: (a) initially applying an adsorbed layer containing a doping substance of a desired concentration to the semiconductor substrate; (b) controlling the concentration of the doping substance in the adsorbed layer; (c) epitaxially growing a semiconductor layer having a crystal lattice structure on said semiconductor substrate; (d) during step (c), causing a secondary implantation operation for incorporating said doping substance into the crystal lattice structure of said semiconductor layer; and (e) performing a heat treatment for removing crystal lattice imperfections and incorporating the doping substance into crystal lattice positions of said semiconductor layer; wherein step (c) comprises a low temperature molecular beam epitaxy process employing a molecular beam; and wherein step (e) includes ionizing a portion of electrically neutral atoms and molecules in the molecular beam to produce positive ions of the host lattice atoms, and applying an accelerating potential to said substrate sufficient to cause said ions to interact with the atoms of said doping substance in said secondary implantation operation and cause said doping substance to be incorporated in the semiconductor layer to provide said doped semiconductor layer.
Claim 14
Independent Claim
197 words
A method for producing a doped semiconductor layer on a semiconductor substrate employing particle radiation, the method comprising: (a) initially applying an adsorbed layer containing a doping substance of a desired concentration to the semiconductor substrate; (b) controlling the concentration of the doping substance in the adsorbed layer; (c) epitaxially growing a semiconductor layer having a crystal lattice structure on said semiconductor substrate; (d) during step (c), causing a secondary implantation operation for incorporating said doping substance into the crystal lattice structure of said semiconductor layer; and (e) performing a heat treatment for removing crystal lattice imperfections and incorporating the doping substance into crystal lattice positions of said semiconductor layer; wherein step (c) comprises a low temperature molecular beam epitaxy process employing a molecular beam; and wherein step (e) includes ionizing a portion of electrically neutral atoms and molecules in the molecular beam to produce positive ions of the host lattice atoms, and applying an accelerating potential to said substrate sufficient to cause said ions to interact with the atoms of said doping substance in said secondary implantation operation and cause said doping substance to be incorporated in the semiconductor layer to provide said doped semiconductor layer.
Claim 15
Dependent Claim
26 words
The method as defined in claim 12, wherein said positive ions of the host lattice atoms are accelerated to a kinetic energy of approximately 250 eV.
Claim 16
Dependent Claim
30 words
The method as defined in claim 13, wherein said substrate material is silicon and said adsorbed layer is a vapor deposited layer of at least one of antimony and gallium.
Claim 17
Dependent Claim
20 words
The method as defined in claim 14, wherein said semiconductor layer epitaxially grown in step (c) is a silicon layer.
Claim 18
Dependent Claim
17 words
The method as defined in claim 14, wherein said doped semiconductor layer is a superlattice of Si/SiGe.
Claim 19
Dependent Claim
33 words
The method as defined in claim 14, wherein said doping substance is antimony and the surface of said semiconductor layer epitaxially grown in step (c) is maintained at approximately 900K during step (c).
Claim 20
Dependent Claim
15 words
The method as defined in claim 1, wherein said adsorbed layer is a monatomic layer.
Claim 21
Dependent Claim
24 words
The method as defined in claim 12, wherein the semiconductor layer epitaxially grown in step (c) is maintained at approximately 900k during step (c).
Claim 22
Dependent Claim
22 words
The method as defined in claim 12, wherein the particle radiation has an energy in the range of 10 to 10,000 eV.
Claim 23
Dependent Claim
22 words
The method as defined in claim 20, wherein the particle radiation has an energy in the range of 100 to 1000 eV.
Claim 24
Dependent Claim
15 words
The method as defined in claim 12, wherein said adsorbed layer is a monatomic layer.
Claim 25
Dependent Claim
38 words
The method as defined in claim 12, wherein the semiconductor layer is comprised of a semiconductor material, and wherein the semiconductor material and the doping substance are selected such that the adsorbed layer is maintained during step (c).
Claim 26
Dependent Claim
24 words
The method as defined in claim 12, wherein step (b) comprises controlling the temperature of the surface of the semiconductor layer during step (c).
Claim 27
Dependent Claim
23 words
The method as defined in claim 24, wherein step (b) further comprises replenishing the doping substance in the adsorbed layer during step (c).
Claim 28
Dependent Claim
22 words
The method as defined in claim 12, wherein step (b) comprises replenishing the doping substance in the adsorbed layer during step (c).
Claim 29
Dependent Claim
24 words
The method as defined in claim 1, wherein the semiconductor layer epitaxially grown in step (c) is maintained at approximatly 900k during step (c).
Claim 30
Independent Claim
131 words
The method for producing a doped semiconductor layer on a semiconductor substrate by employing particle radiation, the method comprising: (a) initially applying an adsorbed layer containing a doping substance of a desired concentration to the semiconductor substrate; (b) epitaxially growing a semiconductor layer having a lattice structure on the semiconductor substrate employing a molecular beam epitaxy process; (c) during step (b), causing a secondary implantation operation for incorporating the doping substance into the crystal lattice structure of the semiconductor layer, the secondary implantation operation comprising directing particle radiation composed of neutral atoms, neutral molecules, and accelarated ionized host lattice atoms of the substrate toward the substrate; and (d) performing a heat treatment for removing crystal lattice imperfections and incorporating the doping substance into the crystal lattice positions of the semiconductor layer.
Claim 31
Independent Claim
131 words
The method for producing a doped semiconductor layer on a semiconductor substrate by employing particle radiation, the method comprising: (a) initially applying an adsorbed layer containing a doping substance of a desired concentration to the semiconductor substrate; (b) epitaxially growing a semiconductor layer having a lattice structure on the semiconductor substrate employing a molecular beam epitaxy process; (c) during step (b), causing a secondary implantation operation for incorporating the doping substance into the crystal lattice structure of the semiconductor layer, the secondary implantation operation comprising directing particle radiation composed of neutral atoms, neutral molecules, and accelarated ionized host lattice atoms of the substrate toward the substrate; and (d) performing a heat treatment for removing crystal lattice imperfections and incorporating the doping substance into the crystal lattice positions of the semiconductor layer.
Claim 32
Dependent Claim
26 words
The method defined in claim 28, comprising the further step of controlling the concentration of the doping substance in the adsorbed layer prior to step (b).
Claim 33
Dependent Claim
43 words
The method defined in claim 28, wherein the semiconductor layer epitaxially grown in step (b) is maintained at approximately 900k during step (b), and wherein step (c) comprises applying to the semiconductor layer particle radiation having an energy of 10 to 10,000 eV.
Claim 34
Dependent Claim
29 words
The method defined in claim 28, wherein said substrate material is silicon and said adsorbed layer is a vapor deposited layer of at least one of antimony and gallium.
References Cited (Backward Citations)
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JPS57211724A
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US4529455A
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US4649059A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-02-21 | 1992-08-22 | 1993-02-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-02-21 | 1996-08-22 | 1997-02-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-02-21 | 2000-08-22 | 2001-02-21 | $7700.00 | Window Closed / Lapsed |