GaAs MESFET

Claim 2

A vertical III-V compound device having IIIV compound semiconductor substrate of a first conductivity; a first layer on the substrate of the first conductivity; a buried layer of a second conductivity having an opening therein and the opening being of the first conductivity; a second layer of the first conductivity covering the buried layer and the opening; and a metal Schottky gate electrode positioned on the second layer over the opening in the buried layer.

Claim 3

The vertical III-V compound device of claim 1 wherein the first layer is N-type AlGaAs, the buried layer is P-type AlGaAs, and the second layer is N-type AlGaAs.

Claim 4

The vertical III-V compound device of claim 1 wherein the first layer is N-type GaAs, the buried layer is P-type GaAs, and the second layer is N-type GaAs.

Claim 5

The vertical III-V compound device of claim 1 further including a source electrode on the second layer and surrounding the gate electrode, and a drain electrode on the substrate opposite to the side of the first layer.

Claim 6

A vertical GaAs FET comprising: a GaAs substrate; a first layer covering the GaAs substrate, the first layer being of AlGaAs and of a first type conductivity; a second layer covering the first layer and being of AlGaAs and of a second type conductivity; a third layer located on the second layer and being of the first type conductivity; a source electrode for conducting current from the third layer; a gate electrode positioned on the third layer for controlling the current; a drain electrode positioned on the substrate opposite from the first layer; and an area in the second layer positioned beneath the gate electrode doped to be of the first type conductivity to provide a current path from the drain electrode to the source electrode wherein the third layer covers the second layer and the area.

Claim 7

A vertical GaAs FET comprising: a GaAs substrate; a first layer covering the GaAs substrate, the first layer being of AlGaAs and of a first type conductivity; a second layer covering the first layer and being of AlGaAs and of a second type conductivity; a third layer located on the second layer and being of the first type conductivity; a source electrode for conducting current from the third layer; a gate electrode positioned on the third layer for controlling the current; a drain electrode positioned on the substrate opposite from the first layer; and an area in the second layer positioned beneath the gate electrode doped to be of the first type conductivity to provide a current path from the drain electrode to the source electrode wherein the third layer covers the second layer and the area.

Claim 8

The vertical GaAs FET of claim 5 wherein the substrate is doped N-type conductivity, the first layer is doped N-type conductivity and at a lesser dopant density than the substrate, the second layer is doped P-type conductivity and makes contact with the source electrode, the third layer is doped N-type, and the area in the second layer positioned beneath the gate electrode is doped N-type.

Claim 9

The vertical GaAs FET of claim 5 wherein the area in the second layer positioned beneath the gate electrode is doped with silicon to provide an implant compensated area.

Claim 10

The vertical GaAs FET of claim 5 further having a highly doped region underneath the source electrode to enhance conductive contact to the third layer.

Claim 11

A vertical GaAs FET comprising: an N-type conductivity GaAs substrate; a first layer covering the substrate and being N-type conductivity AlGaAs and being lighter doped than the substrate; a second layer over the first layer and being P-type conductivity AlGaAs; a third layer over the second layer and being N-type conductivity AlGaAs and being doped to a level between the dopant level of the substrate and the first layer; the third layer leaving a portion of the second layer exposed; a layer of metal over the third layer and being patterned to form gate metal and source metal wherein the source metal makes contact with the exposed portion of the second layer, and the second layer having an opening located below the gate metal to provide a conductive path between the third and first layers wherein the third layer covers the second layer and the opening; and a layer of metal on the side of the substrate opposite from the first layer.

Claim 12

A vertical GaAs FET comprising: an N-type conductivity GaAs substrate; a first layer covering the substrate and being N-type conductivity AlGaAs and being lighter doped than the substrate; a second layer over the first layer and being P-type conductivity AlGaAs; a third layer over the second layer and being N-type conductivity AlGaAs and being doped to a level between the dopant level of the substrate and the first layer; the third layer leaving a portion of the second layer exposed; a layer of metal over the third layer and being patterned to form gate metal and source metal wherein the source metal makes contact with the exposed portion of the second layer, and the second layer having an opening located below the gate metal to provide a conductive path between the third and first layers wherein the third layer covers the second layer and the opening; and a layer of metal on the side of the substrate opposite from the first layer.

Claim 13

The vertical GaAs FET of claim 9 wherein the gate metal comprises titanium, platinum, and gold; and wherein the layer of metal on the substrate forms the drain electrode and comprises nickel, germanium, and gold.