US4798808A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photoconductive device coontaining electroless metal deposited conductive layer
Assignee: Siemens Solar Industries LP
•
Filing: 1986-03-11
•
Granted: 1989-01-17
•
Expires: 2006-03-11
Abstract
Abstract A photoconductive device having an electroless metal deposited conductive layer is provided. The conductive layer is deposited upon n+Si:H alloy. The electroless metal deposited layer can be used as the back contact of a solar cell or as a metal contact for other types of photoconductive devices.
Inventors
- 👤 Elliot Berman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 09:26
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/20; H10F77/206; H10F10/00; H10F10/10; H10F10/17; H10F71/00; H10F71/138; H10P; H10P14/00; H10P14/40; H10P14/46; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
149 words
A process for the production of a photoconductive device which comprises: applying a transparent conductive layer to a transparent insulating substrate; applying a thin film silicon hydrogen alloy (TFS) photoconductor, the N layer of which comprises n+Si:H alloy, to said transparent conductive layer; and applying a conductive metal layer to said N layer by immersing the resulting TFS photoconductor applied to a transparent conductive layer applied to a transparent insulating substrate in an electroless metal plating bath maintained at a pH in the range of about pH 7.5 to pH 8.5 at a temperature of about 80° to 95° Celsius for about 1 to 10 minutes, said n+Si:H alloy catalyzing the deposition of an electroless metal deposited film, and removing from said bath a photoconductive device containing a TFS photoconductor having a layer of metal of about 1,000 to 5,000 angstroms in thickness plated only upon said n+Si:H alloy.
Claim 2
Dependent Claim
149 words
A process for the production of a photoconductive device which comprises: applying a transparent conductive layer to a transparent insulating substrate; applying a thin film silicon hydrogen alloy (TFS) photoconductor, the N layer of which comprises n+Si:H alloy, to said transparent conductive layer; and applying a conductive metal layer to said N layer by immersing the resulting TFS photoconductor applied to a transparent conductive layer applied to a transparent insulating substrate in an electroless metal plating bath maintained at a pH in the range of about pH 7.5 to pH 8.5 at a temperature of about 80° to 95° Celsius for about 1 to 10 minutes, said n+Si:H alloy catalyzing the deposition of an electroless metal deposited film, and removing from said bath a photoconductive device containing a TFS photoconductor having a layer of metal of about 1,000 to 5,000 angstroms in thickness plated only upon said n+Si:H alloy.
Claim 3
Dependent Claim
13 words
A process according to claim 1 wherein said photoconductor is a P-I-N photoconductor.
Claim 4
Dependent Claim
13 words
A process according to claim 1 wherein said conductive metal layer is nickel.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-01-17 | 1992-07-18 | 1993-01-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-01-17 | 1996-07-18 | 1997-01-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-01-17 | 2000-07-18 | 2001-01-17 | $7700.00 | Window Closed / Lapsed |