US4472458A
Expired / Lapsed
US
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Process for the production of metallized semiconductors
Assignee: Bayer AG
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Filing: 1983-01-13
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Granted: 1984-09-18
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Expires: 2003-01-13
Abstract
Abstract The firmly adhesive metallization, in particular partial metallization, of the surface of semiconductors is possible, without pickling, by carrying out the activation with organometallic compounds of metals of the IB and VIIIB Groups of the Periodic Table of Elements, then reducing in a conventional manner and metallizing without current.
Inventors
- 👤 Kirkor Sirinyan
- 👤 Rudolf Merten
- 👤 Gerhard D. Wolf
- 👤 Henning Giesecke
- 👤 Uwe Claussen
- 👤 Harold Ebneth
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 11:24
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/46; H10P14/47; Y; Y10; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31678
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
66 words
A process for the production of a semiconductor metallized on its surface, said semiconductor including silicon, germanium, gallium, arsenic, IIIA-VA or IIB-VIA compounds, comprising applying to the semiconductor surface organometallic compounds of elements selected from the group consisting of IB and VIIIB elements of the Periodic Table, without previous pickling, reducing the organometallic compounds and subjecting the semiconductor surface to currentless metallization in a metallization bath.
Claim 2
Dependent Claim
66 words
A process for the production of a semiconductor metallized on its surface, said semiconductor including silicon, germanium, gallium, arsenic, IIIA-VA or IIB-VIA compounds, comprising applying to the semiconductor surface organometallic compounds of elements selected from the group consisting of IB and VIIIB elements of the Periodic Table, without previous pickling, reducing the organometallic compounds and subjecting the semiconductor surface to currentless metallization in a metallization bath.
Claim 3
Dependent Claim
12 words
A process according to claim 1, wherein said surface is partially metallized.
Claim 4
Dependent Claim
16 words
A process according to claim 1, wherein said semiconductor is a semiconductor based on gallium arsenide.
Claim 5
Dependent Claim
29 words
A process according to claim 1, wherein saiid organometallic compounds carry an additional functional group selected from the group consisting of carboxylic acid groups and carboxylic acid anhydride groups.
Claim 6
Dependent Claim
21 words
A process according to claim 1, wherein said organometallic compounds are employed as a solution or suspension in an organic solvent.
Claim 7
Dependent Claim
32 words
A process according to claim 1, wherein said semiconductor surface is contacted with a solution of said organometallic compound for a period of time between about 1 second and about 85 minutes.
Claim 8
Dependent Claim
22 words
A process according to claim 1, wherein said metallization is conducted at a temperature between about -80° C. and about +120° C.
Claim 9
Dependent Claim
21 words
A process according to claim 1, wherein said metallization is conducted at a temperature between +10° C. and about +40° C.
Claim 10
Dependent Claim
25 words
A process according to claim 1, wherein in said metallization a metal layer of a thickness from between about 0.01 to 3.0 μm is applied.
Claim 11
Dependent Claim
76 words
A process for the production of a photo-voltaic element metallized on its surface, said photovoltaic element including silicon, germanium, gallium, arsenic, IIIA-VA or IIB-VIA compounds, comprising applying to at least one surface of the photo-voltaic element an organometallic compound of an element selected from the group consisting of IB and VIIIB elements of the Periodic Table, without previous pickling, reducing the organometallic compounds and subjecting the photo-voltaic element surface to currentless metallization in a metallization bath.
Claim 12
Dependent Claim
76 words
A process for the production of a photo-voltaic element metallized on its surface, said photovoltaic element including silicon, germanium, gallium, arsenic, IIIA-VA or IIB-VIA compounds, comprising applying to at least one surface of the photo-voltaic element an organometallic compound of an element selected from the group consisting of IB and VIIIB elements of the Periodic Table, without previous pickling, reducing the organometallic compounds and subjecting the photo-voltaic element surface to currentless metallization in a metallization bath.
Claim 13
Dependent Claim
18 words
A process according to claim 10, wherein said photo-voltaic element is a photo-voltaic element based on gallium arsenide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-09-18 | 1988-03-19 | 1988-09-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-09-18 | 1992-03-19 | 1992-09-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-09-18 | 1996-03-19 | 1996-09-18 | $7700.00 | Window Closed / Lapsed |