III-V Compound heteroepitaxial 3-D semiconductor structures utilizing superlattices

Claim 1

A device formed of semiconductor material deposited by epitaxial growth on a substrate having a predetermined and different lattice parameter, comprising on said substrate an alternate succession of layers of a first semiconductor material ranging in number (i) from 1 to n and layers of a second type ranging in number (i) from 1 to n as well as at least a first functional component for performing a predetermined function formed on said succession of layers, the layers of the first semiconductor material having a lattice parameter which is substantially matched with a multiple or a sub-multiple of the substrate lattice parameter, the layers of the second semiconductor material having a lattice parameter which is matched with a multiple or a sub-multiple of the lattice parameter of the first material, the functional component being formed of material having the same lattice parameter as the second semiconductor material, the energy gaps of the layers of the first semiconductor materials being different; wherein said alternate succession of layers of said first and second semiconductor materials has interfaces which absorb dislocation defects caused by mismatching of crystal lattice parameters between the substrate and the first semiconductor material; said device further comprising on said first functional component a second alternate succession of layers of a third semiconductor material and layers of a fourth semiconductor material as well as at least a second functional component formed on said second succession of layers, the lattice parameter of said third material being substantially matched with a multiple or sub-multiple of the lattice parameter of the material of the first functional component, the lattice parameter of the fourth material being matched with a multiple or sub-multiple of the lattice parameter of the third material, the lattice parameter of the second functional component being matched with the lattice parameter of the fourth material of the fourth layer.

Claim 2

A device formed of semiconductor material deposited by epitaxial growth on a substrate having a predetermined and different lattice parameter, comprising on said substrate an alternate succession of layers of a first semiconductor material ranging in number (i) from 1 to n and layers of a second type ranging in number (i) from 1 to n as well as at least a first functional component for performing a predetermined function formed on said succession of layers, the layers of the first semiconductor material having a lattice parameter which is substantially matched with a multiple or a sub-multiple of the substrate lattice parameter, the layers of the second semiconductor material having a lattice parameter which is matched with a multiple or a sub-multiple of the lattice parameter of the first material, the functional component being formed of material having the same lattice parameter as the second semiconductor material, the energy gaps of the layers of the first semiconductor materials being different; wherein said alternate succession of layers of said first and second semiconductor materials has interfaces which absorb dislocation defects caused by mismatching of crystal lattice parameters between the substrate and the first semiconductor material; said device further comprising on said first functional component a second alternate succession of layers of a third semiconductor material and layers of a fourth semiconductor material as well as at least a second functional component formed on said second succession of layers, the lattice parameter of said third material being substantially matched with a multiple or sub-multiple of the lattice parameter of the material of the first functional component, the lattice parameter of the fourth material being matched with a multiple or sub-multiple of the lattice parameter of the third material, the lattice parameter of the second functional component being matched with the lattice parameter of the fourth material of the fourth layer.