US4792840A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Resistor integrated on a semiconductor substrate
Assignee: Thales SA
•
Filing: 1987-04-01
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Granted: 1988-12-20
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Expires: 2007-04-01
Abstract
Abstract The invention provides a resistor integrated on a semiconductor substrate and capable of withstanding high voltages. The integrated resistor is formed by a well of the opposite conductivity type relative to that of the substrate and is in the form of a ribbon wound about one of its ends which is connected electrically to a conducting pole. The conducting pole provides the electric connection of the ribbon with the rear face of the substrate and through this substrate.
Inventors
- 👤 Bruno Nadd
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 07:00
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/43; H10D84/00; H10D84/201; H10D84/204; H10D84/209
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
131 words
A resistor integrated on a semiconductor substrate of a first conductivity type having a first face and a second face and connected between a terminal on the first face and a metallization on the second face, the resistor comprising: a first region of a second conductivity type formed into the substrate from said first face, said first region including at least a spiral-shaped portion; a second highly doped region of the first conductivity type being formed at the center of the spiral-shaped portion of the first region and contacting the substrate, and a conductive stud formed on said first face connecting the second region with an inner portion of the spiral-shaped portion of the first region; wherein said terminal comprises an outer portion of the spiral-shaped portion of the first region.
Claim 2
Dependent Claim
131 words
A resistor integrated on a semiconductor substrate of a first conductivity type having a first face and a second face and connected between a terminal on the first face and a metallization on the second face, the resistor comprising: a first region of a second conductivity type formed into the substrate from said first face, said first region including at least a spiral-shaped portion; a second highly doped region of the first conductivity type being formed at the center of the spiral-shaped portion of the first region and contacting the substrate, and a conductive stud formed on said first face connecting the second region with an inner portion of the spiral-shaped portion of the first region; wherein said terminal comprises an outer portion of the spiral-shaped portion of the first region.
Claim 3
Dependent Claim
27 words
The resistor of claim 1, wherein the first region includes a further portion which extends from the outer portion of the spiralshaped portion around said spiral-shaped portion.
Claim 4
Dependent Claim
32 words
The resistor of claim 1, wherein said substrate comprises a highly doped wafer covered with an epitaxial layer of the same first conductivity type wherein are formed said first and second regions.
Claim 5
Dependent Claim
23 words
The resistor of claim 1, comprising at least one tap contacting an intermediate portion of said spiral shaped portion of the first region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-12-20 | 1992-06-20 | 1992-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-12-20 | 1996-06-20 | 1996-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-12-20 | 2000-06-20 | 2000-12-20 | $7700.00 | Window Closed / Lapsed |