US4139833A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Resistance temperature sensor
Assignee: Gould Inc
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Filing: 1976-11-22
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Granted: 1979-02-13
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Expires: 1996-11-22
Abstract
Abstract A polished ceramic substrate is provided with an insulation layer of silicon monoxide (SiO), over which a nickel metal thin-film is laid down in a spiral or serpentine pattern, taking up a desirably small area, but at the same time giving a high electrical resistance. Finally, a cover or protective layer of silicon monoxide is then deposited over the resistor, serving to protect it from the possibility of outside contamination.
Inventors
- 👤 Thomas S. Kirsch
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 11:59
CPC Classifications
H; H01; H01C; H01C7/00; H01C7/006; H01C17/00; H01C17/06; H01C17/075; H01C17/08; H01C7/22; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49085; Y10T29/49099
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
116 words
A deposited thin-film resistance temperature sensor, comprising: a high-density alumina substrate having a flat polished surface; a first silicon monoxide layer vapor deposited onto said substrate flat polished surface; a sinuous length of evaporated nickel film deposited onto said first silicon monoxide layer; first and second connector pads deposited onto said nickel film spaced from one another along the nickel film that amount necessary to define a predetermined magnitude of electrical resistance for said nickel film; first and second gold leads respectively resistance welded to said first and second connector pads; and a second silicon monoxide layer vapor deposited over said nickel film and said connector pads leaving outer end portions of said gold leads exposed.
Claim 2
Dependent Claim
116 words
A deposited thin-film resistance temperature sensor, comprising: a high-density alumina substrate having a flat polished surface; a first silicon monoxide layer vapor deposited onto said substrate flat polished surface; a sinuous length of evaporated nickel film deposited onto said first silicon monoxide layer; first and second connector pads deposited onto said nickel film spaced from one another along the nickel film that amount necessary to define a predetermined magnitude of electrical resistance for said nickel film; first and second gold leads respectively resistance welded to said first and second connector pads; and a second silicon monoxide layer vapor deposited over said nickel film and said connector pads leaving outer end portions of said gold leads exposed.
Claim 3
Dependent Claim
24 words
A deposited thin-film temperature sensor as in claim 1, in which the nickel film is annealed at approximately 805° F. to stabilize film resistance.
Claim 4
Independent Claim
136 words
A method of making a thin-film temperature sensing device, comprising: forming a flat polished surface on a high-density alumina substrate; vapor depositing a film of silicon monoxide onto the flat polished surface of the substrate; vapor depositing a spiral-shaped metallic nickel film onto the silicon monoxide film; vapor depositing metallic connection pads onto said nickel film; heating the substrate with silicon monoxide and metallic nickel films thereon to a temperature of 805° F. (429° C.) in a low gas pressure environment to effect stabilization of the nickel film grain structure and resistance value; resistance welding a gold lead to each connection pad; vapor depositing a silicon monoxide film over the nickel film and connection pads; and heating the assembly to 400° F. (204° C.) for approximately 48 hours to stabilize the resistance of the nickel film.
Claim 5
Independent Claim
136 words
A method of making a thin-film temperature sensing device, comprising: forming a flat polished surface on a high-density alumina substrate; vapor depositing a film of silicon monoxide onto the flat polished surface of the substrate; vapor depositing a spiral-shaped metallic nickel film onto the silicon monoxide film; vapor depositing metallic connection pads onto said nickel film; heating the substrate with silicon monoxide and metallic nickel films thereon to a temperature of 805° F. (429° C.) in a low gas pressure environment to effect stabilization of the nickel film grain structure and resistance value; resistance welding a gold lead to each connection pad; vapor depositing a silicon monoxide film over the nickel film and connection pads; and heating the assembly to 400° F. (204° C.) for approximately 48 hours to stabilize the resistance of the nickel film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-02-12 | 1982-08-14 | 1983-02-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-02-12 | 1986-08-14 | 1987-02-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-02-12 | 1990-08-14 | 1991-02-13 | $7700.00 | Window Closed / Lapsed |