US3607386A
Expired / Lapsed
US
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Method of preparing resistive films
Assignee: HAROLD M GREENHOUSE
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Filing: 1968-06-04
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Granted: 1971-09-21
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Expires: 1988-06-04
Abstract
Abstract A method of preparing temperature stable high resistance, thin film resistors, wherein a metal whose oxide or silicide has a higher resistivity than the pure metal is vacuum evaporated through a suitable mask onto a glass substrate which has been completely undercoated with a layer of silicon monoxide. Immediately after the deposition of the metallic film a silicon monoxide overcoat is deposited through the same mask. The resulting resistors are heat treated for such time as is required to bring the resistors to the desired value. The resulting resistors have a low-temperature coefficient and relatively high sheet resistivities.
Inventors
- 👤 Robert T Galla
- 👤 Harold M Greenhouse
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 16:02
CPC Classifications
H; H01; H01C; H01C17/00; H01C17/22; H01C17/26; H01C17/265; H01B; H01B1/00; H01C17/06; H01C17/075; H01C17/08; H01C7/00; H01C7/006; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49099
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
65 words
A method of preparing resistive films on a substrate comprising: vacuum depositing a first silicon monoxide coat on said substrate; vacuum depositing a nickel film on said first coat to a sheet resistivity in excess of 6,000 ohms per square; vacuum depositing a second silicon monoxide coat over said nickel film; and heat treating said resistive film at temperatures between 260* C. and 400* C.
Claim 2
Dependent Claim
54 words
A method of preparing resistive films on a substrate as recited in claim 1 wherein said first silicon monoxide coat is deposited to a depth sufficient to isolate said nickel film from said substrate and said second silicon monoxide coat is deposited to a depth sufficient to isolate said nickel film from atmospheric air.
Claim 3
Dependent Claim
44 words
A method of preparing resistive films on a substrate as recited in claim 3 wherein said first silicon monoxide coat is deposited to a depth of approximately 2,500 Angstroms, and said second silicon monoxide coat is deposited to a depth of approximately 10,000 Angstroms.
Claim 4
Independent Claim
65 words
A method of preparing resistive films on a substrate comprising: vacuum depositing a first silicon monoxide coat on said substrate; vacuum depositing a chromium film on said first coat to a sheet resistivity in excess of 100,000 ohms per square; vacuum depositing a second silicon monoxide coat over said chromium film; and heat treating said resistive film at temperatures between 260* C. and 400* C.
Claim 5
Dependent Claim
54 words
A method of preparing resistive films on a substrate as recited in claim 5 wherein said first silicon monoxide coat is deposited to a depth sufficient to isolate said chromium film from said substrate and said second silicon monoxide coat is deposited to a depth sufficient to isolate said chromium film from atmospheric air.
Claim 6
Dependent Claim
44 words
A method of preparing resistive films on a substrate as recited in claim 5 wherein said first silicon monoxide coat is deposited to a depth of approximately 2,500 Angstroms, and said second silicon monoxide coat is deposited to a depth of approximately 10,000 Angstroms.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-09-20 | 1975-03-22 | 1975-09-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-09-20 | 1979-03-22 | 1979-09-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-09-20 | 1983-03-22 | 1983-09-21 | $7700.00 | Window Closed / Lapsed |