Active matrix display screen with drain resistance and processes for producing this screen

Claim 2

Active matrix display screen comprising a first plate (10) coated with a matrix of conductive blocks (22), thin-film transistors (20), a plurality of conductive addressing lines (14) and a plurality of conductive addressing columns (12), each transistor (20) having a gate connected to an addressing line, a source formed by a projection connected to one of said blocks and a drain connected to a column, said screen further having a second plate (24) comprising a counterelectrode (26) and an electrooptical material inserted between the two plates, said screen being characterized by the fact that each draincolumn connection is made by a strip (55) of conductive material exhibiting a certain resistance, the drain of each transistor being formed by the part of the strip located in the zone where an addressing line overlaps said strip and wherein each addressing line has a certain width in the zone where the transistors are formed and another width smaller than the first, in the zone where said strip intersects an addressing column.

Claim 3

Display screen according to claim 1, wherein said conductive strip (55) exhibiting a certain resistance consists of the same material as that (52) which constitutes the conductive blocks.

Claim 4

Display screen according to claim 2, wherein said material is indium-tin oxide (ITO).

Claim 5

Process for producing an active matrix display screen according to claim 1, said process consisting of forming a first plate (10) carrying first capacitor plates of capacitors (22), thin-layer transistors (20), conductive addressing lines (14) and columns (12), and forming an upper plate (24) coated with an counterelectrode (26) forming a second capacitor plate of the capacitors, said process being characterized by the fact that, to form the lower plate, the following operations are performed: depositing on a insulating substrate (50) of a layer of a first conductive material (52, 54), a first photoengraving applied to said layer to constitute blocks (51) forming one of the capacitor plates of the future capacitors, each block having a projection (53), said first photoengraving further allowing to subsist a strip (55) having a longitudinal part (55l) which goes along the block and its projection and a transverse part (55t), depositing of a layer of a second conductive material (56) and of a layer of a first insulating material (58), a second photoengraving applied to said two latter layers to allow parallel columns to subsist at the longitudinal part (55l) of the strips and in contact with the transverse part (55t) of said strips, depositing of a stack made up of a layer (60) of hydrogenated amorphous silicon, a layer (62) of a second insulating material, a layer (64) of a third conductive material, a third photoengraving applied to addressing line stack to allow lines to subsist, addressing lines passing over said projections (53) of the blocks and over the end of the strips (55) and forming transistors there, the width of said addressing lines being able to be larger in the area of the transistors than it is in the areas where they intersect the columns.

Claim 6

Process for producing an active matrix display screen according to claim 1, said process consisting of forming a first plate (10) carrying first capacitor plates of capacitors (22), thin layer transistors (20), conductive addressing lines (14) and columns (12), and forming an upper plate (24) coated with an counterelectrode (26) forming a second capacitor plate of the capacitors, said process being characterized by the fact that, to form the lower plate, the following operations are performed: depositing on an insulating substrate (50) of a layer of a first conductive material (52, 54), a first photoengraving applied to said layer to constitute blocks (51) forming one of the capacitor plates of the future capacitors, each block having a projection (53), said first photoengraving further allowing to subsist a strip (55) having a longitudinal part (55l) extending along the block and its projection and a transverse part (55t) and columns (57) in contact with the transverse part of the strips, depositing of a layer of a fist insulating material (58), a second photoengraving applied to said insulating layer to leave said insulating material on the columns, depositing of a stack made up of a layer (60) of hydrogenated amorphous silicon, a layer (62) of a second insulating material, a layer (64) of a third conductive material, a third photoengraving applied to addressing line stack to allow lines to subsist, addressing lines passing over said projections (53) of the blocks and over the end of the strips (55) and forming transistors there, the width of said addressing lines being able to be larger in the area of the transistors than it is in the areas where they intersect the columns.