Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
192 words
In an integrated circuit which includes a lateral bipolar transistor formed by first and second spaced regions of one conductivity type formed in and at a surface of a region of the opposite conductivity type in a body of semiconductor material, the improvement comprising, a first layer of insulating material over the said surface of the body and over the first and second spaced regions, said first layer having openings therethrough, separate conductive contacts extending through said openings in said first insulating layer to said first and second regions, a second layer of insulating material over said first insulating layer and said contacts, a conductive strip extending over said second insulating layer and over a portion of the region of opposite conductivity type between said first and second spaced regions, and through an opening in said second insulating layer to the contact on the first region, and a MOS transistor formed in said region of opposite conductivity type having source and drain regions, said source region being connected to the second region, said drain region being connected to the region of opposite conductivity type, and a gate connected to the first region.
Claim 2
Dependent Claim
192 words
In an integrated circuit which includes a lateral bipolar transistor formed by first and second spaced regions of one conductivity type formed in and at a surface of a region of the opposite conductivity type in a body of semiconductor material, the improvement comprising, a first layer of insulating material over the said surface of the body and over the first and second spaced regions, said first layer having openings therethrough, separate conductive contacts extending through said openings in said first insulating layer to said first and second regions, a second layer of insulating material over said first insulating layer and said contacts, a conductive strip extending over said second insulating layer and over a portion of the region of opposite conductivity type between said first and second spaced regions, and through an opening in said second insulating layer to the contact on the first region, and a MOS transistor formed in said region of opposite conductivity type having source and drain regions, said source region being connected to the second region, said drain region being connected to the region of opposite conductivity type, and a gate connected to the first region.
Claim 3
Dependent Claim
63 words
An integrated circuit in accordance with claim 1 wherein the MOS transistor includes a third region of the one conductivity type in the region of opposite conductivity type adjacent but spaced from the second region and a conductive gate strip on the first insulating layer over the portion of the region of opposite conductivity type between the second region and the third region.
Claim 4
Dependent Claim
79 words
An integrated circuit in accordance with claim 2 in which the third region is connected to the region of opposite conductivity type by a highly conductive connecting region of the opposite conductivity type extending into the body and engaging said third region and the gate is connected to the first region by a conductive strip on the second insulating layer which extends through the second insulating layer to contact the conductive contact for the first region and the gate.
Claim 5
Dependent Claim
25 words
An integrated circuit in accordance with claim 3 including a conductive contact in electrical contact with both of the third region and the connecting region.
Claim 6
Dependent Claim
40 words
An integrated circuit in accordance with claim 4 in which the region of opposite conductivity type is a portion of an epitaxial layer of semiconductor material on the surface of a substrate of semiconductor material of the one conductivity type.
Claim 7
Dependent Claim
57 words
An integrated circuit in accordance with claim 5 including a highly conductive buried region of the opposite conductivity type extending across the junction between the substrate and the epitaxial layer and extending across the three regions of the one conductivity type and the connecting region extends from the surface of the epitaxial layer to the buried region.
Claim 8
Dependent Claim
31 words
An integrated circuit in accordance with claim 6 in which the second region extends around the first region, and the third region and connecting regions extends partly around the second region.
Claim 9
Dependent Claim
34 words
An integrated circuit in accordance with claim 6 in which the one conductivity type is P-type and the opposite conductivity type is N-type to form a PNP bipolar transistor and a P-type MOS transistor.
Claim 10
Dependent Claim
34 words
An integrated circuit in accordance with claim 6 in which the one conductivity type is N-type and the opposite conductivity type is P-type to form a NPN bipolar transistor and an N-type MOS transistor.