Semiconductor device

Abstract

Abstract PURPOSE:To provide high input resistor and large current characteristic in a small chip size by associating a bipolar transistor and a field effect transistor, supplying an input to the latter, and obtaining an output from the former. CONSTITUTION:P type diffused regions 23, 24 are formed in the base diffusion of a transistor (Tr). N<+> type diffused regions 22, 25 are formed in the emitter diffusion of Tr. Numerals 19, 20, 21 designate metal electrodes, and numeral 18 denotes a gate oxidized film. When a voltage of a specified voltage VT is applied to the electrode 20, a current is flowed from the region 23 to the region 24 to act as an enhancement type MOSTr. The current flowed from the region 23 to the region 24 is amplified by a Tr which has N type regions 2, 24 as collectors, a P type region 24 as a base and an N type region 25 as an emitter, and outputted to the electrode 21. Since the TrQ3 is MOS type Tr, its input resistance is large, and the resistance value does not vary the operating current. Since the current is amplified by the TrQ4, large output current can be obtained.

Inventors

• 👤 Koichi Tanaka
• 👤 康一 田中

Bibliographic Details