US4400711A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit protection device
Assignee: Intersil Corp
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Filing: 1981-03-31
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Granted: 1983-08-23
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Expires: 2001-03-31
Abstract
Abstract Disclosed is a protection circuit which may be used, for example, in a television receiver to protect circuitry formed within an integrated circuit from damage due to excessively high voltage transients. The protection circuit comprises a PNPN structure forming a silicon controlled rectifier (SCR) and metal-oxide-semiconductor (MOS) transistor integral to the SCR structure. The SCR and the MOS transistors are arranged to form a two terminal protection circuit which is rendered conductive when the potential difference across the two terminals is greater than a predetermined threshold. One terminal of the protection circuit is connected to an input or output signal terminal of the protected circuit, and the other terminal is connected to a reference terminal to which a reference potential such as ground potential is applied. Transient voltages appearing at the integrated circuit terminal greater than the predetermined threshold voltage causes the protection circuit to conduct current, thereby dissipating the energy of the high voltage transient and protecting the integrated circuit from damage. In one embodiment, the gate electrode of the MOS transistor is connected to the reference terminal, and in another to the signal terminal. The latter connection provides a much larger predetermined threshold than the former, and typically considerably in excess of the supply voltage.
Inventors
- 👤 Leslie R. Avery
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 13:01
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/60; H10D8/00; H10D8/80; H10D18/00; H10D18/40
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
120 words
A semiconductor protection circuit comprising: a semiconductor substrate of a first conductivity type; a semiconductor layer of a second conductivity type disclosed on said substrate, said semiconductor layer having a surface; first and second semiconductor regions of said first conductivity type, each disposed in PN junction forming relation with said semiconductor layer; a third semiconductor region of said second conductivity type disposed in PN junction forming relation with said second semiconductor region; a layer of insulating material disposed on the surface of said semiconductor layer lying between said first and second semiconductor regions; a layer of conductive material disposed on said insulating layer; and conductive means for connecting said conductive layer to one of said first and third semiconductor regions.
Claim 2
Dependent Claim
120 words
A semiconductor protection circuit comprising: a semiconductor substrate of a first conductivity type; a semiconductor layer of a second conductivity type disclosed on said substrate, said semiconductor layer having a surface; first and second semiconductor regions of said first conductivity type, each disposed in PN junction forming relation with said semiconductor layer; a third semiconductor region of said second conductivity type disposed in PN junction forming relation with said second semiconductor region; a layer of insulating material disposed on the surface of said semiconductor layer lying between said first and second semiconductor regions; a layer of conductive material disposed on said insulating layer; and conductive means for connecting said conductive layer to one of said first and third semiconductor regions.
Claim 3
Dependent Claim
22 words
A semiconductor protection circuit in accordance with claim 1 wherein said conductive means connects said conductive layer to said first semiconductor region.
Claim 4
Dependent Claim
22 words
A semiconductor protection circuit in accordance with claim 1 wherein said conductive means connects said conductive layer to said third semiconductor region.
Claim 5
Dependent Claim
59 words
A semiconductor protection circuit in accordance with claim 1, 2 or 3 wherein: said second semiconductor region extends in a direction along the surface of said semiconductor layer so as to form a resistor comprising that portion of said second semiconductor region disposed between said third semiconductor region and the end of said extension of said second semiconductor region.
Claim 6
Dependent Claim
26 words
A semiconductor protection circuit in accordance with claim 4 further comprising means for connecting said extended end of said second semiconductor region to said semiconductor substrate.
Claim 7
Dependent Claim
69 words
A semiconductor protection circuit according to claim 5 wherein said means for connecting said extended end of said second semiconductor region to said semiconductor substrate comprises a fourth semiconductor region of said first conductivity type extending from said surface of said semiconductor layer to said substrate, said fourth semiconductor region intersecting with said second semiconductor region at said extended end thereof, said fourth semiconductor region surrounding said semiconductor layer.
Claim 8
Dependent Claim
68 words
A semiconductor protection circuit in accordance with claim 5 further comprising: a reference terminal for receiving a reference supply potential; means for connecting said reference terminal to said substrate and to said third semiconductor region; a bond pad; a utilization circuit including a terminal for receiving a signal, said terminal being connected to said bond pad; and means for connecting said bond pad to said first semiconductor region.
Claim 9
Dependent Claim
72 words
A semiconductor protection circuit in accordance with claim 4 further comprising a buried semiconductor region of said second conductivity type, said buried semiconductor region disposed between said semiconductor layer and said substrate, and extending beneath said first semiconductor region, said third semiconductor region, and that portion of said semiconductor layer between said first and said third semiconductor regions, said buried semiconductor region having a lower resistivity than that of said semiconductor layer.
Claim 10
Dependent Claim
140 words
A protection circuit comprising: first and second transistors of opposite conductivity type having respective emitter, base, and collector electrodes; an MOS transistor having source, gate, and drain electrodes; a signal terminal to which the source electrode of said MOS transistor and the emitter electrode of said first transistor are connected; a connection between the base electrode of said first transistor and the collector electrode of said second transistor; a common connection between the collector electrode of said first transistor the base electrode of said second transistor and the drain electrode of the MOS transistor; a resistor connected between the base and emitter electrodes of said second transistor; a reference terminal to which the emitter electrode of said second transistor is connected; and a connection between the gate electrode of said MOS transistor to one of said signal and reference terminals.
Claim 11
Dependent Claim
140 words
A protection circuit comprising: first and second transistors of opposite conductivity type having respective emitter, base, and collector electrodes; an MOS transistor having source, gate, and drain electrodes; a signal terminal to which the source electrode of said MOS transistor and the emitter electrode of said first transistor are connected; a connection between the base electrode of said first transistor and the collector electrode of said second transistor; a common connection between the collector electrode of said first transistor the base electrode of said second transistor and the drain electrode of the MOS transistor; a resistor connected between the base and emitter electrodes of said second transistor; a reference terminal to which the emitter electrode of said second transistor is connected; and a connection between the gate electrode of said MOS transistor to one of said signal and reference terminals.
Claim 12
Dependent Claim
22 words
A protection circuit in accordance with claim 9 wherein said gate electrode of said MOS transistor is connected to said signal terminal.
Claim 13
Dependent Claim
22 words
A protection circuit in accordance with claim 9 wherein said gate electrode of said MOS transistor is connected to said reference terminal.
Claim 14
Dependent Claim
23 words
A protection circuit in accordance with claims 9, 10, or 11 further including a utilization circuit for signal connection to said signal terminal.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-08-22 | 1987-02-21 | 1987-08-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-08-22 | 1991-02-21 | 1991-08-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-08-22 | 1995-02-21 | 1995-08-23 | $7700.00 | Window Closed / Lapsed |