Thyristor controlled by field effect transistor

Abstract

Abstract 1. A thyristor (Th) comprising a semiconductor (1), in which an outer cathode-side zone (2), an inner zone (3), a central zone (4) and an anode-side zone (5) are arranged in contact one upon another, and the outer cathode-side zone (2) and the anode-side zone (5) are respectively contacted by a cathode electrode (6) and an anode electrode (9), and on one side of which, in the same semiconductor body (1), there is arranged a field effect transistor (FET), whose zones consist of parts (12, 14, 15) of the zones of the thyristor, characterized in that the centre zone (4) of the thyristor is weakly doped in comparison with the other zones ; that the thyristor (Th) has a shunt between the outer cathode-side zone (2) and the adjoining inner zone (3) ; that the field effect transistor (FET) is arranged on the side of the outer cathode-side zone (2) which faces away from the shunt ; that the source zone of the field effect transistor consists of a part of the outer cathode-side zone (2) and the drain zone consists of a part (15) of the central zone (4) which reaches the surface of the semiconductor body (1) ; that the control zone is formed by a part (12) of adjoining inner zone (3) which comes to the surface between said zones, and at least this part (12) of the inner zone (3) is covered by a control electrode (8) which is insulated from the surface of the semiconductor body.

Inventors

• 👤 Jürgen Dr. Ing. Krausse
• 👤 Jenö Dr. Ing. Dipl. Phys. Tihanyi

Bibliographic Details