Patent US4784972A successfully refreshed from Google Patents.
US4784972A
Expired / Lapsed
US
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Method of joining beam leads with projections to device electrodes
Assignee: Panasonic Holdings Corp
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Filing: 1987-04-17
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Granted: 1988-11-15
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Expires: 2007-04-17
Abstract
Abstract Disclosed is a method for making beam leads with projections and for joining such beam leads to electrodes of a semiconductor device. On a substrate (10), beam leads (12) with projections (12A) are concurrently formed using a single process. Semiconductor device (16) is pressed to beam lead (2) to join electrode (14) to projection (12A). When the semiconductor device is lifted, beam leads which are joined into the device are removed from the substrate. The concurrent formation of the beam leads (12) and projections (12A) can be carried out by plating using a substrate (10) having either a projection (10A) or a region (24A) of different resistance.
Inventors
- 👤 Kenzo Hatada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 08:28
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/60; H10W70/00; H10W70/099; H10W70/60; H10W70/67; H10W70/68; H10W70/682; H10W72/01; H10W72/012; H10W72/01204; H10W72/20; H10W72/251; H10W72/252; H10W72/851; H10W72/874; H10W90/00
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
141 words
A method of manufacturing a semiconductor device which includes a semiconductor member having a semiconductor and an electrode, and a beam lead, comprising the steps of: providing a substrate; using a single process to concurrently form a lead portion and a projection of a beam lead on the substrate, the projection extending from the lead portion, disposed on the substrate and projecting from the substrate; aligning the projection of the beam lead with an electrode of a semiconductor member, after said step of aligning, pressing the electrode against the projection so as to thereby join the electrode to the beam lead at the projection; and after said step of pressing, moving the semiconductor member with the electrode thereof and the beam lead joined to the electrode away from the substrate so as to thereby separate the beam lead from the substrate.
Claim 2
Independent Claim
141 words
A method of manufacturing a semiconductor device which includes a semiconductor member having a semiconductor and an electrode, and a beam lead, comprising the steps of: providing a substrate; using a single process to concurrently form a lead portion and a projection of a beam lead on the substrate, the projection extending from the lead portion, disposed on the substrate and projecting from the substrate; aligning the projection of the beam lead with an electrode of a semiconductor member, after said step of aligning, pressing the electrode against the projection so as to thereby join the electrode to the beam lead at the projection; and after said step of pressing, moving the semiconductor member with the electrode thereof and the beam lead joined to the electrode away from the substrate so as to thereby separate the beam lead from the substrate.
Claim 3
Dependent Claim
53 words
A method as in claim 1, wherein said step of providing a substrate includes the single process consist of providing a substrate having a projection and the step of forming the beam lead over the projection of the substrate to form the projection of the beam lead on the projection of the substrate.
Claim 4
Dependent Claim
60 words
A method as in claim 1, wherein said step of providing a substrate includes the step of providing a substrate having an electrically conductive layer which includes a low resistance portion and a high resistance portion and the step of electro-plating the beam lead thereon so as to form the projection of the beam lead on the low resistance portion.
Claim 5
Independent Claim
182 words
A method of manufacturing a semiconductor device which includes a semiconductor member having a semiconductor and electrodes, and beam leads, comprising the steps of: electro-plating an open pattern of electrically conductive material forming a plurality of spaced beam leads having respective projections, onto a substrate with the projections being formed at locations on the substrate corresponding to the locations of electrodes of a semiconductor member; after said step of electro-plating, positioning the semiconductor member so that the locations of the electrodes are aligned with the corresponding locations of the projections; after said step of positioning, pressing the electrodes against the projections so as to thereby join the electrodes to the lead beams at the projections; after said step of pressing, moving the semiconductor member with the electrodes thereof and the lead beams joined to the electrodes away from the substrate so as to thereby separate the beam leads from the substrate to provide a first semiconductor device; and after said step of pressing, repeating said steps of electro-plating, positioning, pressing and moving using the same substrate, to provide a second semiconductor device.
Claim 6
Independent Claim
182 words
A method of manufacturing a semiconductor device which includes a semiconductor member having a semiconductor and electrodes, and beam leads, comprising the steps of: electro-plating an open pattern of electrically conductive material forming a plurality of spaced beam leads having respective projections, onto a substrate with the projections being formed at locations on the substrate corresponding to the locations of electrodes of a semiconductor member; after said step of electro-plating, positioning the semiconductor member so that the locations of the electrodes are aligned with the corresponding locations of the projections; after said step of positioning, pressing the electrodes against the projections so as to thereby join the electrodes to the lead beams at the projections; after said step of pressing, moving the semiconductor member with the electrodes thereof and the lead beams joined to the electrodes away from the substrate so as to thereby separate the beam leads from the substrate to provide a first semiconductor device; and after said step of pressing, repeating said steps of electro-plating, positioning, pressing and moving using the same substrate, to provide a second semiconductor device.
Claim 7
Dependent Claim
61 words
A method as in claim 4, wherein said step of electro-plating includes the step of electro-plating the open pattern of electrically conductive material forming the plurality of spaced beam leads having respective beam lead projections, onto a substrate having substrate projections at locations of electrodes of a semiconductor member, so that the beam lead projections are formed on the substrate projections.
Claim 8
Dependent Claim
56 words
A method as in claim 4, wherein said step of electro-plating includes the step of providing a substrate having an electrically conductive layer which includes low resistance portions and high resistance portions and the step of electro-plating on the conductive layer so as to form the projections of the beam lead on the low resistance portions.
Claim 9
Independent Claim
181 words
A method of manufacturing semiconductor devices which includes a semiconductor member having a semiconductor and electrodes, and a beam lead, comprising the steps of: electro-plating electrically conductive material forming a plurality of spaced beam leads having respective projections, onto openings formed on a substrate, with the projections being formed at locations on the substrate corresponding to the locations of electrodes of a semiconductor member; after said step of electro-plating, positioning the semiconductor member so that the locations of the electrodes are aligned with the corresponding locations of the projections; after said step of positioning, pressing the electrodes against the projections so as to thereby join the electrodes to the beam leads at the projections; after said step of pressing, moving the semiconductor member with the electrodes thereof and the beam leads joined to the electrodes away from the substrate so as to thereby separate the beam leads from the substrate to provide a first semiconductor device; and after said step of pressing, repeating said steps of electro-plating, positioning, pressing and moving using the same substrate, to provide a second semiconductor device.
Claim 10
Independent Claim
181 words
A method of manufacturing semiconductor devices which includes a semiconductor member having a semiconductor and electrodes, and a beam lead, comprising the steps of: electro-plating electrically conductive material forming a plurality of spaced beam leads having respective projections, onto openings formed on a substrate, with the projections being formed at locations on the substrate corresponding to the locations of electrodes of a semiconductor member; after said step of electro-plating, positioning the semiconductor member so that the locations of the electrodes are aligned with the corresponding locations of the projections; after said step of positioning, pressing the electrodes against the projections so as to thereby join the electrodes to the beam leads at the projections; after said step of pressing, moving the semiconductor member with the electrodes thereof and the beam leads joined to the electrodes away from the substrate so as to thereby separate the beam leads from the substrate to provide a first semiconductor device; and after said step of pressing, repeating said steps of electro-plating, positioning, pressing and moving using the same substrate, to provide a second semiconductor device.
Claim 11
Dependent Claim
65 words
A method as in claim 7, wherein said step of electro-plating includes the step of electro-plating the electrically conductive material forming the plurality of spaced beam leads having respective beam lead projections, onto the substrate having substrate projections at locations on the substrate corresponding to the locations of electrodes of a semiconductor member, so that the beam lead projections are formed on the substrate projections.
Claim 12
Dependent Claim
56 words
A method as in claim 7, wherein said step of electro-plating includes the step of providing a substrate having an electrically conductive layer which includes low resistance portions and high resistance portions and the step of electro-plating on the conductive layer so as to form the projections of the beam leads on the low resistance portions.
Claim 13
Independent Claim
135 words
A method of manufacturing a semiconductor device which includes a semiconductor member having a semiconductor and an electrode, and a beam lead, comprising the steps of: providing a substrate; using a single process to concurrently form a lead portion and a projection of a beam lead on the substrate, the projection extending from the lead portion, disposed on the substrate and projecting from the substrate; aligning the beam lead with an electrode of a semiconductor member; after said step of aligning, pressing the electrode against the projection so as to thereby join the electrode to the beam lead; and after said step of pressing, moving the semiconductor member with the electrode thereof and the lead beam joined to the electrode away from the substrate so as to thereby separate the beam lead from the substrate.
Claim 14
Independent Claim
135 words
A method of manufacturing a semiconductor device which includes a semiconductor member having a semiconductor and an electrode, and a beam lead, comprising the steps of: providing a substrate; using a single process to concurrently form a lead portion and a projection of a beam lead on the substrate, the projection extending from the lead portion, disposed on the substrate and projecting from the substrate; aligning the beam lead with an electrode of a semiconductor member; after said step of aligning, pressing the electrode against the projection so as to thereby join the electrode to the beam lead; and after said step of pressing, moving the semiconductor member with the electrode thereof and the lead beam joined to the electrode away from the substrate so as to thereby separate the beam lead from the substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-15 | 1992-05-16 | 1992-11-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-15 | 1996-05-16 | 1996-11-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-15 | 2000-05-16 | 2000-11-15 | $7700.00 | Window Closed / Lapsed |