US4783693A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Driver element for inductive loads
Assignee: STMicroelectronics SRL
•
Filing: 1986-07-14
•
Granted: 1988-11-08
•
Expires: 2006-07-14
Abstract
Abstract This driver element for inductive loads, specifically DC motors, step motors, solenoids, and the like comprises a transistor bridge, each transistor of the bridge being parallel connected to a respective flyback diode ensuring recirculation of the current on switching the transistors off. The diodes are of the Schottky type, so as to ensure reduced switching loss and improved reliability of the element. The Schottky diodes are formed by leaving a non-diffused portion of the collector epitaxial layer through the base and emitter regions up to the device surface so as to contact the emitter metallization layer.
Inventors
- 👤 Angelo Alzati
- 👤 Flavio Villa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 17:07
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/101; H10D84/121; G; G11; G11B; G11B5/00; G11B5/02; G11B5/022; H02; H02P; H02P7/00; H02P7/03; H10D84/60; H10D84/611; H10D84/613; H10D84/617; H10D84/641
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
152 words
A driver element for inductive loads, comprising: an epitaxial layer of the N conductivity type defining at least one element major surface; a first region of the P conductivity type extending in said epitaxial layer from said element major surface; a second region of the N conductivity type extending from said element major surface within said first region and being surrounded thereby; a plurality of epitaxial portions of the N conductivity type, extending within and being surrounded by said first and second regions from said epitaxial layer to said element major surface, and a metal layer extending on said element major surface on and in contact with said second region and said epitaxial portions, said epitaxial layer, said first region and said second region respectively forming collector, base and emitter regions of an NPN transistor and said epitaxial portions and said metal layer forming respectively cathode and anode regions of Schottky diodes.
Claim 2
Dependent Claim
152 words
A driver element for inductive loads, comprising: an epitaxial layer of the N conductivity type defining at least one element major surface; a first region of the P conductivity type extending in said epitaxial layer from said element major surface; a second region of the N conductivity type extending from said element major surface within said first region and being surrounded thereby; a plurality of epitaxial portions of the N conductivity type, extending within and being surrounded by said first and second regions from said epitaxial layer to said element major surface, and a metal layer extending on said element major surface on and in contact with said second region and said epitaxial portions, said epitaxial layer, said first region and said second region respectively forming collector, base and emitter regions of an NPN transistor and said epitaxial portions and said metal layer forming respectively cathode and anode regions of Schottky diodes.
Claim 3
Dependent Claim
193 words
A driver element according to claim 1, further comprising an insulating layer interposed between said metal layer and said element major surface, second region having a substantially elongated shape with a plurality of emitter through holes, said first region having a substantially elongated cup-like shape accomodating therein said second region and including base through holes aligned with said emitter through holes, said first region including a plurality of annular portions, each said annular portion protruding from said cup-like shape at said base through holes up to said element major surface within a respective one of said emitter through holes, with each said annular portion and base through hole encircling a respective epitaxial portion, said insulating layer having a plurality of adjacent throughgoing holes extending above said epitaxial portions and above said second region between adjacent emitter through holes and defining, respectively, a plurality of Schottky diode holes, where said metal layer is in direct electrical contact with said epitaxial portions, and a plurality of emitter contact holes, where said metal layer is in direct electrical contact with said second region, each said Schottky diode hole being arranged between two adjacent emitter contact holes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-08 | 1992-05-09 | 1992-11-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-08 | 1996-05-09 | 1996-11-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-08 | 2000-05-09 | 2000-11-08 | $7700.00 | Window Closed / Lapsed |