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US4779124A
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Virtual phase buried channel CCD
Assignee: Texas Instruments Inc
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Filing: 1987-01-22
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Granted: 1988-10-18
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Expires: 2007-01-22
Abstract
Abstract A virtual phase, buried channel CCD with the usual metal gate/oxide structure replaced by a reverse biased junction (possibly a heterojunction) or Schottky barrier is disclosed. Such gate substitution for a standard three phase or multiphase CCD and other devices compatibly fabricated with such gate are also disclosed.
Inventors
- 👤 Jaroslav Hynecek
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 10:47
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10B; H10B12/00; H10D; H10D44/00; H10D44/40
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
115 words
A gate structure for a buried channel charge coupled device, comprising: (a) a substrate of a first conductivity type; (b) a buried channel of opposite conductivity type on said substrate; (c) a semiconductor channel barrier on said buried channel, said channel barrier and said buried channel of opposite conductivity types; and (d) a semiconductor gate region on said channel barrier, said gate region and said channel barrier of opposite conductivity types; (e) a gate electrode of said first conductivity type in said buried channel; and (f) an isolation oxide over said gate electrode isolating channel barrier portions and gate electrode portions over said channel barrier portions from adjacent channel barrier portions and gate electrode portions.
Claim 2
Dependent Claim
115 words
A gate structure for a buried channel charge coupled device, comprising: (a) a substrate of a first conductivity type; (b) a buried channel of opposite conductivity type on said substrate; (c) a semiconductor channel barrier on said buried channel, said channel barrier and said buried channel of opposite conductivity types; and (d) a semiconductor gate region on said channel barrier, said gate region and said channel barrier of opposite conductivity types; (e) a gate electrode of said first conductivity type in said buried channel; and (f) an isolation oxide over said gate electrode isolating channel barrier portions and gate electrode portions over said channel barrier portions from adjacent channel barrier portions and gate electrode portions.
Claim 3
Dependent Claim
55 words
The gate structure of claim 1, wherein: (a) the thickness and doping level of said channel barrier are characterized by means to provide substantially full depletion of said channel barrier during portions of the operation of said device in which said buried channel is depleted except for signal charge and said gate region is clocked.
Claim 4
Dependent Claim
26 words
A gate structure as set forth in claim 2, further including a donor implant in said buried layer beneath said gate electrode and closely adjacent thereto.
Claim 5
Dependent Claim
25 words
A gate structure as set forth in claim 3; further including an acceptor implant in said buried layer beneath a portion of said gate portion.
Claim 6
Dependent Claim
26 words
A gate structure as set forth in claim 1, further including a donor implant in said buried layer beneath said gate electrode and closely adjacent thereto.
Claim 7
Dependent Claim
25 words
A gate structure as set forth in claim 5, further including an acceptor implant in said buried layer beneath a portion of said gate region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-10-18 | 1992-04-18 | 1992-10-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-10-18 | 1996-04-18 | 1996-10-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-10-18 | 2000-04-18 | 2000-10-18 | $7700.00 | Window Closed / Lapsed |