US4032952A
Expired / Lapsed
US
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Bulk charge transfer semiconductor device
Assignee: Hitachi Ltd
•
Filing: 1973-04-03
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Granted: 1977-06-28
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Expires: 1993-04-03
Abstract
Abstract In a charge transfer semiconductor device majority carriers are transferred within a semiconductor body on a substrate from means for introducing majority carriers to means for detecting transferred majority carriers by applying pulsed voltages to a series of electrodes disposed on an insulating layer which is disposed on one surface of the semiconductor body between the introducing means and the detecting means. Depletion regions are formed within the semiconductor body, so that one end of a depletion region below one electrode reaches the substrate and another end of a depletion region below an electrode next to the one electrode does not reach the substrate, whereby majority carriers below the one electrode are pushed out below the next electrode.
Inventors
- 👤 Shinya Ohba
- 👤 Iwao Takemoto
- 👤 Masaharu Kubo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 02:22
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/462; H10D44/466; H10D44/464; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/335; Y; Y10; Y10S; Y10S148/00; Y10S148/08
Claims Analysis
Total Claims: 77
Claim 1
Independent Claim
235 words
A bulk charge transfer semiconductor device comprising: a substrate; a semiconductor body wherein majority carriers are to be transferred, disposed on the substrate, which is electrically isolated from the substrate; a series of electrodes disposed over the semiconductor body while being electrically isolated from the semiconductor body; means for introducing majority carriers into the semiconductor body, disposed on the semiconductor body adjacent one end of said series of electrodes; means for detecting said introduced majority carriers, disposed on said semiconductor body adjacent the other end of said series of electrodes; and means for applying voltages to the electrodes for forming depletion regions within the semiconductor body so that majority carriers are pushed out by said depletion regions toward said detecting means, thereby transferring introduced majority carriers along the semiconductor body; and wherein the thickness of the semiconductor body is less than the depth of said depletion regions and the width of the semiconductor body, which is the dimension of the semiconductor body perpendicular to the direction in which the majority carriers are transferred, is less than the total length of the width of an electrode in a direction perpendicular to the transit direction of the majority carriers and parallel to the surface of said semiconductor body and twice the depletion width spread from the edges of an electrode toward a direction perpendicular to said transit direction and parallel to the surface of said semiconductor body.
Claim 2
Dependent Claim
235 words
A bulk charge transfer semiconductor device comprising: a substrate; a semiconductor body wherein majority carriers are to be transferred, disposed on the substrate, which is electrically isolated from the substrate; a series of electrodes disposed over the semiconductor body while being electrically isolated from the semiconductor body; means for introducing majority carriers into the semiconductor body, disposed on the semiconductor body adjacent one end of said series of electrodes; means for detecting said introduced majority carriers, disposed on said semiconductor body adjacent the other end of said series of electrodes; and means for applying voltages to the electrodes for forming depletion regions within the semiconductor body so that majority carriers are pushed out by said depletion regions toward said detecting means, thereby transferring introduced majority carriers along the semiconductor body; and wherein the thickness of the semiconductor body is less than the depth of said depletion regions and the width of the semiconductor body, which is the dimension of the semiconductor body perpendicular to the direction in which the majority carriers are transferred, is less than the total length of the width of an electrode in a direction perpendicular to the transit direction of the majority carriers and parallel to the surface of said semiconductor body and twice the depletion width spread from the edges of an electrode toward a direction perpendicular to said transit direction and parallel to the surface of said semiconductor body.
Claim 3
Dependent Claim
25 words
A bulk charge transfer semiconductor device according to claim 1, further including an insulating layer disposed between said series of electrodes and said semiconductor body.
Claim 4
Dependent Claim
43 words
A bulk charge transfer semiconductor device according to claim 1, wherein said series of electrodes is disposed on a series of semiconductor regions whose conductivity type is opposite to that of the semiconductor body and which is disposed in the semiconductor body, respectively.
Claim 5
Dependent Claim
31 words
A bulk charge transfer semiconductor device according to claim 1, wherein said electrodes are electrodes which form Schottky barriers with the semiconductor body and are directly disposed on the semiconductor body.
Claim 6
Dependent Claim
19 words
A bulk charge transfer semiconductor device according to claim 1, wherein the semiconductor body is in the monocrystalline state.
Claim 7
Dependent Claim
19 words
A bulk charge transfer semiconductor device according to claim 1, wherein the semiconductor body is in the polycrystalline state.
Claim 8
Dependent Claim
29 words
A bulk charge transfer semiconductor device according to claim 1, wherein said substrate consists of monocrystalline semiconductor material having a conductivity type opposite to that of the semiconductor body.
Claim 9
Dependent Claim
17 words
A bulk charge transfer semiconductor device according to claim 1, wherein said substrate consists of insulating material.
Claim 10
Dependent Claim
39 words
A bulk charge transfer semiconductor device according to claim 8, wherein an insulating layer is directly disposed on the substrate, the semiconductor body disposed on the insulating layer and the series of electrodes are disposed within the insulating layer.
Claim 11
Dependent Claim
42 words
A bulk charge transfer semiconductor device according to claim 9, which further comprises another insulating layer disposed on the semiconductor body, and another series of electrodes disposed on said another insulating layer so that the respective series of electrodes overlap each other.
Claim 12
Dependent Claim
70 words
A bulk charge transfer semiconductor device according to claim 10, wherein the dimension of each electrode of said another series of electrodes in the transit direction of the majority carriers is greater than that of the first mentioned series of electrodes and is disposed so that a part of each electrode of said another series is displaced from each electrode of the series of electrodes disposed within the insulating layer.
Claim 13
Dependent Claim
48 words
A bulk charge transfer semiconductor device according to claim 2, wherein the semiconductor body has a structure having alternately different thicknesses, and each electrode of the series of electrodes is disposed on the insulating layer so as to cover adjacent thick and thin portions of the semiconductor body.
Claim 14
Dependent Claim
48 words
A bulk charge transfer semiconductor device according to claim 2, wherein the insulating layer has a structure having alternately different thicknesses, and each electrode of the series of electrodes is disposed on the insulating layer so as to cover adjacent thick and thin portions of the insulating layer.
Claim 15
Dependent Claim
43 words
A bulk charge transfer semiconductor device according to claim 1, wherein the semiconductor body has alternately different impurity concentration regions therein, and each electrode of the series of electrodes is disposed so as to cover a pair of adjacent different impurity concentration regions.
Claim 16
Dependent Claim
21 words
A bulk charge transfer semiconductor device according to claim 1, wherein the semiconductor body has a turned portion on the substrate.
Claim 17
Dependent Claim
38 words
A bulk charge transfer semiconductor device according to claim 15, which further comprises a semiconductor region having a high impurity concentration than that of the semiconductor body, which is disposed in the turned portion of the semiconductor body.
Claim 18
Dependent Claim
28 words
A bulk charge transfer semiconductor device according to claim 15, which further comprises a metal layer disposed on the surface of the turned portion of the semiconductor body.
Claim 19
Dependent Claim
20 words
A bulk charge transfer semiconductor device according to claim 1, wherein said detecting means has the structure of a transistor.
Claim 20
Dependent Claim
32 words
A bulk charge transfer semiconductor device according to claim 1, which further comprises means for detecting majority carriers by their transit disposed adjacent at least one electrode of the series of electrodes.
Claim 21
Dependent Claim
26 words
A bulk charge transfer semiconductor device according to claim 14, wherein each electrode of the series of electrodes is disposed on the high impurity concentration region.
Claim 22
Dependent Claim
41 words
A bulk charge transfer semiconductor device according to claim 1, which further comprises semiconductor regions having an opposite conductivity type to that of the semiconductor body disposed at the surface portion of the semiconductor body corresponding to gaps between the electrodes.
Claim 23
Dependent Claim
48 words
A bulk charge transfer semiconductor device according to claim 2, which further comprises another insulating layer disposed on said first mentioned insulating layer and the series of electrodes, and another series of electrodes disposed on said another insulating layer corresponding to gaps between the first series of electrodes.
Claim 24
Dependent Claim
37 words
A bulk charge transfer semiconductor device according to claim 7, which further comprises semiconductor regions having a higher impurity concentration than that of the semiconductor substrate disposed in the semiconductor substrate corresponding to gaps between the electrodes.
Claim 25
Dependent Claim
65 words
A bulk charge transfer semiconductor device according to claim 1, which further comprises semiconductor regions having an opposite conductivity type to that of the semiconductor body, disposed at the surface portion of the semiconductor body so that each electrode of the series of electrodes covers the each semiconductor region, which is disposed at one side of each electrode to which no majority carriers are transferred.
Claim 26
Dependent Claim
45 words
A bulk charge transfer semiconductor device according to claim 3, which further comprises insulating layers, each of which is disposed between the semiconductor regions and each of the series of electrodes is disposed on each of the semiconductor regions and each of the insulating layers.
Claim 27
Dependent Claim
50 words
A bulk charge transfer semiconductor device according to claim 3, which further comprises another series of semiconductor regions whose conductivity type is opposite to that of the semiconductor body disposed between the semiconductor regions so that each of said another semiconductor regions is connected to each of said semiconductor regions.
Claim 28
Dependent Claim
30 words
A bulk charge transfer semiconductor device according to claim 22, wherein each electrode of said first series of electrodes is connected to each electrode of said another series of electrodes.
Claim 29
Dependent Claim
199 words
A bulk charge semiconductor device comprising: a semiconductor body of a first conductivity type through which majority carriers within said body are to be transferred; a plurality of spaced-apart electrodes disposed over a principal surface of said semiconductor body; first means, coupled to said semiconductor body, for introducing majority carriers thereinto; second means, connected to said electrodes, for forming controlled depletion regions extending completely through the thickness of said semiconductor body so as to push out said introduced majority carriers and transferring majority carriers along said body beneath said electrodes by applying voltages to said electrodes; and third means, coupled to said semiconductor body, for detecting majority carriers which have been transferred through said semiconductor body; and wherein the thickness of said semiconductor body in a direction perpendicular to the direction of transfer of said majority carriers is less than the total of the width of an electrode in a direction perpendicular to the direction of the transit of majority carriers and parallel to the surface of said semiconductor body and twice the depletion width spread from the edges of an electrode in a direction perpendicular to said transit direction and parallel to the surface of said semiconductor body.
Claim 30
Dependent Claim
199 words
A bulk charge semiconductor device comprising: a semiconductor body of a first conductivity type through which majority carriers within said body are to be transferred; a plurality of spaced-apart electrodes disposed over a principal surface of said semiconductor body; first means, coupled to said semiconductor body, for introducing majority carriers thereinto; second means, connected to said electrodes, for forming controlled depletion regions extending completely through the thickness of said semiconductor body so as to push out said introduced majority carriers and transferring majority carriers along said body beneath said electrodes by applying voltages to said electrodes; and third means, coupled to said semiconductor body, for detecting majority carriers which have been transferred through said semiconductor body; and wherein the thickness of said semiconductor body in a direction perpendicular to the direction of transfer of said majority carriers is less than the total of the width of an electrode in a direction perpendicular to the direction of the transit of majority carriers and parallel to the surface of said semiconductor body and twice the depletion width spread from the edges of an electrode in a direction perpendicular to said transit direction and parallel to the surface of said semiconductor body.
Claim 31
Dependent Claim
20 words
A bulk charge transfer device according to claim 28, further including a substrate over which said semiconductor body is disposed.
Claim 32
Dependent Claim
34 words
A bulk charge transfer device according to claim 28, further including a layer of insulator material disposed directly on said semiconductor body with said electrodes being disposed directly on said layer of insulator material.
Claim 33
Dependent Claim
43 words
A bulk charge transfer device according to claim 28, wherein said electrodes comprise conductors attached to a respective plurality of spaced-apart semiconductor regions of a second conductivity type opposite said first conductivity type forming a plurality of p-n junctions with said semiconductor body.
Claim 34
Dependent Claim
22 words
A bulk charge transfer device according to claim 14, further including an insulating layer disposed between said electrodes and said semiconductor body.
Claim 35
Dependent Claim
50 words
A bulk charge transfer device according to claim 29, wherein said semiconductor body comprises a plurality of substantially parallel linear first portions, adjacent ones of which are alternately connected by second portions, which extend in a direction perpendicular to said first portions, at alternately opposite ends of said first portions.
Claim 36
Dependent Claim
29 words
A bulk charge transfer device according to claim 33, wherein said second portions include semiconductor regions having a higher impurity concentration than that of said semiconductor body, disposed therein.
Claim 37
Dependent Claim
33 words
A bulk charge transfer device according to claim 33, further including respective metal layers disposed in said second portions in alignment with the electrodes disposed over the first portions of said semiconductor body.
Claim 38
Dependent Claim
26 words
A bulk charge transfer device according to claim 28, wherein said third means comprises a transistor formed within said semiconductor body adjacent one of said electrodes.
Claim 39
Dependent Claim
51 words
A bulk charge transfer device according to claim 36, wherein said transistor comprises a pair of semiconductor regions of a second conductivity type, opposite said first conductivity type, disposed in opposite surface portions of said semiconductor body with a portion of said body therebetween separating the semiconductor regions from each other.
Claim 40
Dependent Claim
51 words
A bulk charge transfer device according to claim 36, wherein said transistor comprises a pair of semiconductor regions of a second conductivity type, opposite said first conductivity type, disposed in the same surface of said semiconductor body with a portion of said semiconductor body separating said semiconductor regions from each other.
Claim 41
Dependent Claim
29 words
A bulk charge transfer device according to claim 38, wherein about three-quarters of one of the regions of said pair is surrounded by the other region of said pair.
Claim 42
Dependent Claim
27 words
A bulk charge transfer device according to claim 38, wherein one of the regions of said pair is completely surrounded by the other region of said pair.
Claim 43
Dependent Claim
25 words
A bulk charge transfer device according to claim 38, further including a Schottky barrier layer formed on said semiconductor body between said pair of regions.
Claim 44
Dependent Claim
60 words
A bulk charge transfer device according to claim 28, wherein said third means comprises a higher impurity concentration semiconductor region disposed in said semiconductor body adjacent one of said electrodes, an MOS-FET transistor disposed in said body apart from said higher impurity concentration semiconductor region, the gate electrode of which extends to and contacts said high impurity concentration semiconductor region.
Claim 45
Dependent Claim
55 words
A bulk charge transfer device according to claim 29, wherein said third means comprises at least one MOS-type transistor disposed in a portion of said substrate adjacent to but separated from said semiconductor body, the gate electrode of said transistor being connected to an extending portion of said semiconductor body adjacent one of said electrodes.
Claim 46
Dependent Claim
63 words
A bulk charge transfer device according to claim 43, wherein said MOS-type transistor includes a pair of source and drain semiconductor regions of said first conductivity type, but having an impurity concentration greater than that of said semiconductor body disposed in said substrate, and a gate semiconductor region of said first conductivity type disposed in said substrate between said source and drain regions.
Claim 47
Dependent Claim
60 words
A bulk charge transfer device according to claim 43, wherein said MOS-type transistor includes a pair of source and drain semiconductor regions of said first conductivity type, but having an impurity concentration greater than that of said semiconductor body, disposed in said substrate which is made of a semiconductor material of a second conductivity type opposite said first conductivity type.
Claim 48
Dependent Claim
57 words
A bulk charge transfer device according to claim 43, wherein said MOS-type transistor includes a pair of source and drain semiconductor regions of a second conductivity type, opposite to said first conductivity type, disposed in a semiconductor region of said first conductivity type which is formed in said substrate adjacent to but separated from said semiconductor body.
Claim 49
Dependent Claim
50 words
A bulk charge transfer device according to claim 43, wherein said at least one MOS-type transistor comprises a plurality of MOS-type transistors, the source and drain regions of which are respectively connected in parallel and the gate electrodes of which are connected to individual ones of said plurality of electrodes.
Claim 50
Dependent Claim
54 words
A bulk charge transfer device according to claim 28, wherein said semiconductor body has adjacent contiguous portions of alternately different thicknesses and further including semiconductor regions of a second conductivity type opposite said first conductivity type each of which is formed in said body so as to overlap adjacent thick and thin portions thereof.
Claim 51
Dependent Claim
48 words
A bulk charge transfer device according to claim 28, wherein said semiconductor body has adjacent contiguous portions of alternately different thicknesses and wherein each of said electrodes is disposed to overlap a respective thin and thick portion of said semiconductor body and to form a Schottky barrier therewith.
Claim 52
Dependent Claim
39 words
A bulk charge transfer device according to claim 24, wherein said semiconductor regions are formed in said semiconductor body and each of said electrodes is disposed directly on a semiconductor region and a portion of said body adjacent thereto.
Claim 53
Dependent Claim
46 words
A bulk charge transfer device according to claim 30, wherein said layer of insulating material comprises a plurality of spaced apart portions disposed on said body and each of said electrodes further extends onto a respective portion of said semiconductor body between adjacent insulating layer portions.
Claim 54
Dependent Claim
46 words
A bulk charge transfer semiconductor device according to claim 1, wherein the semiconductor body has alternately different impurity concentration regions therein, and each electrode of the series of electrodes is disposed so as to cover only one of a pair of adjacent different impurity concentration regions.
Claim 55
Dependent Claim
26 words
A bulk charge transfer semiconductor device according to claim 52, wherein each electrode of the series of electrodes is disposed over the high impurity concentration region.
Claim 56
Dependent Claim
23 words
A bulk charge transfer semiconductor device according to claim 52, further including an insulating layer disposed between said electrodes and said semiconductor body.
Claim 57
Dependent Claim
229 words
A bulk charge transfer semiconductor device comprising: a semiconductor body of a first conductivity type through which majority carriers within said body are transferred; a plurality of spaced-apart electrodes disposed over a principal surface of said semiconductor body; first means, coupled to said semiconductor body, for introducing majority carriers therein; second means, connected to said electrodes, for forming first depletion regions extending completely through the thickness of said semiconductor body so as to push out said introduced majority carriers and transferring majority carriers along said body beneath said electrodes by applying voltages to said electrodes; third means, coupled to said semiconductor body, for detecting majority carriers which have been transferred through said semiconductor body; and fourth means, coupled to said semiconductor body, for forming second depletion regions at portions in said semiconductor body corresponding to all the gaps between said electrodes; and wherein the thickness of said semiconductor body in a direction perpendicular to the direction of transfer of said majority carriers is less than the total of the width of an electrode in a direction perpendicular to the direction of the transit of majority carriers and parallel to the surface of said semiconductor body and twice the depletion width of the first depletion region spread from the edges of an electrode in a direction perpendicular to said transit direction and parallel to the surface of said semiconductor body.
Claim 58
Dependent Claim
229 words
A bulk charge transfer semiconductor device comprising: a semiconductor body of a first conductivity type through which majority carriers within said body are transferred; a plurality of spaced-apart electrodes disposed over a principal surface of said semiconductor body; first means, coupled to said semiconductor body, for introducing majority carriers therein; second means, connected to said electrodes, for forming first depletion regions extending completely through the thickness of said semiconductor body so as to push out said introduced majority carriers and transferring majority carriers along said body beneath said electrodes by applying voltages to said electrodes; third means, coupled to said semiconductor body, for detecting majority carriers which have been transferred through said semiconductor body; and fourth means, coupled to said semiconductor body, for forming second depletion regions at portions in said semiconductor body corresponding to all the gaps between said electrodes; and wherein the thickness of said semiconductor body in a direction perpendicular to the direction of transfer of said majority carriers is less than the total of the width of an electrode in a direction perpendicular to the direction of the transit of majority carriers and parallel to the surface of said semiconductor body and twice the depletion width of the first depletion region spread from the edges of an electrode in a direction perpendicular to said transit direction and parallel to the surface of said semiconductor body.
Claim 59
Dependent Claim
70 words
A bulk charge transfer semiconductor device according to claim 55, wherein said semiconductor body comprises first impurity concentration regions and second impurity concentration regions, each of which is disposed between a pair of said first impurity concentration regions and acts as said fourth means, and each electrode of said spaced-apart electrodes is disposed so as to cover only one of a pair of adjacent first and second impurity concentration regions.
Claim 60
Dependent Claim
30 words
A bulk charge transfer semiconductor device according to claim 56, wherein the impurity concentration of said first impurity concentration regions is higher than that of said second impurity concentration regions.
Claim 61
Dependent Claim
26 words
A bulk charge transfer semiconductor device according to claim 57, wherein each electrode of said spaced apart electrodes is disposed on said first impurity concentration regions.
Claim 62
Dependent Claim
24 words
A bulk charge transfer semiconductor device according to claim 56, further including an insulating layer disposed between said spaced-apart electrodes and said semiconductor body.
Claim 63
Dependent Claim
27 words
A bulk charge transfer semiconductor device according to claim 55, wherein said spaced-apart electrodes contact with said semiconductor body and form Schottky barrier with said semiconductor body.
Claim 64
Dependent Claim
67 words
A bulk charge transfer semiconductor device according to claim 55, which further comprises semiconductor regions of a second conductivity type are disposed in said semiconductor body under at least a part of each of said spaced-apart electrodes, and wherein said fourth means comprises insulating layers disposed on said semiconductor body at all portions of gaps between said spaced-apart electrodes, and another electrodes disposed on said insulating layers.
Claim 65
Dependent Claim
67 words
A bulk charge transfer semiconductor device according to claim 55, wherein said semiconductor body comprises first impurity concentration region and second impurity concentration region, each of which is disposed between a pair of said first impurity concentration regions and acts as said fourth means, and each electrode of said spaced-apart electrodes is disposed so as to cover a pair of adjacent first and second impurity concentration regions.
Claim 66
Dependent Claim
30 words
A bulk charge transfer semiconductor device according to claim 62, wherein an impurity concentration of said first impurity concentration region is higher than that of said second impurity concentration regions.
Claim 67
Dependent Claim
25 words
A bulk charge transfer semiconductor device according to claim 63, wherein each electrode of said spaced-apart electrodes is disposed on said first impurity concentration regions.
Claim 68
Dependent Claim
43 words
A bulk charge transfer semiconductor device according to claim 55, wherein said fourth means comprises semiconductor regions having a second conductivity type relative to that of said semiconductor body disposed at the surface portion of semiconductor body corresponding gaps between said spaced-apart electrodes.
Claim 69
Dependent Claim
62 words
A bulk charge transfer semiconductor device according to claim 55, which further comprises a first insulating layer disposed between said spaced-apart electrodes and said semiconductor body, and wherein said fourth means comprises a second insulating layer disposed on said first insulating layer and said spaced-apart electrodes, and another spaced-apart electrodes disposed on said second insulating layer corresponding gaps between said spaced-apart electrodes.
Claim 70
Dependent Claim
26 words
A bulk charge transfer semiconductor device according to claim 66, wherein each electrode of spaced-apart electrode is connected to each electrode of said another spaced-apart electrodes.
Claim 71
Dependent Claim
59 words
A bulk charge transfer semiconductor device according to claim 55, which further including a semiconductor substrate having a second conductivity type over which said semiconductor body is disposed, and wherein said fourth means comprises semiconductor regions having a higher impurity concentration than that of the semiconductor substrate disposed in the semiconductor substrate corresponding to gaps between said spaced-apart electrodes.
Claim 72
Dependent Claim
24 words
A bulk charge transfer semiconductor device according to claim 62, further including an insulating layer disposed between said spaced-apart electrodes and said semiconductor body.
Claim 73
Dependent Claim
57 words
A bulk charge transfer semiconductor device according to claim 55, wherein said semiconductor body commprises a plurality of substantially parallel linear first portions which act as said fourth means, adjacent ones of which are alternately connected by second portions, which extend in a direction perpendicular to said first portion, at alternately opposite ends of said first portions.
Claim 74
Dependent Claim
30 words
A bulk charge transfer semiconductor device according to claim 70, wherein said second portions include semiconductor regions having a higher impurity concentration than that of said semiconductor body, disposed therein.
Claim 75
Dependent Claim
34 words
A bulk charge transfer semiconductor device according to claim 71, further including respective metal layers disposed in said second portions in alignment with the electrodes disposed over the first portions of said semiconductor body.
Claim 76
Dependent Claim
229 words
A bulk charge transfer semiconductor device comprising: a semiconductor body of a first conductivity type through which majority carriers within said body are to be transferred; a plurality of spaced-apart electrodes disposed in a principal surface of said semiconductor body, which comprises semiconductor regions of a second conductivity type; first means, coupled to said semiconductor body, for forming first depletion regions extending completely through the thickness of said semiconductor body so as to push out said introduced majority carriers and transferring majority carriers along said body beneath said electrodes by applying voltages to said electrodes; third means coupled to said semiconductor body, for detecting majority carriers which have been transferred through said semiconductor body; and fourth means, coupled to said semiconductor body, for forming second depletion regions at portions in said semiconductor body corresponding to all the gaps between said electrodes; and wherein the thickness of said semiconductor body in a direction perpendicular to the direction of transfer of said majority carriers is less than the total of the width of an electrode in a direction perpendicular to the direction of the transit of majority carriers and parallel to the surface of said semiconductor body and twice the depletion width of the first depletion region spread from the edges of an electrode in a direction perpendicular to said transit direction and parallel to the surface of said semiconductor body.
Claim 77
Dependent Claim
229 words
A bulk charge transfer semiconductor device comprising: a semiconductor body of a first conductivity type through which majority carriers within said body are to be transferred; a plurality of spaced-apart electrodes disposed in a principal surface of said semiconductor body, which comprises semiconductor regions of a second conductivity type; first means, coupled to said semiconductor body, for forming first depletion regions extending completely through the thickness of said semiconductor body so as to push out said introduced majority carriers and transferring majority carriers along said body beneath said electrodes by applying voltages to said electrodes; third means coupled to said semiconductor body, for detecting majority carriers which have been transferred through said semiconductor body; and fourth means, coupled to said semiconductor body, for forming second depletion regions at portions in said semiconductor body corresponding to all the gaps between said electrodes; and wherein the thickness of said semiconductor body in a direction perpendicular to the direction of transfer of said majority carriers is less than the total of the width of an electrode in a direction perpendicular to the direction of the transit of majority carriers and parallel to the surface of said semiconductor body and twice the depletion width of the first depletion region spread from the edges of an electrode in a direction perpendicular to said transit direction and parallel to the surface of said semiconductor body.
References Cited (Backward Citations)
US3792322A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1980-06-27 | 1980-12-27 | 1981-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-06-27 | 1984-12-27 | 1985-06-28 | $3760.00 | Window Closed / Lapsed |
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