Patent US4768076A successfully refreshed from Google Patents.
US4768076A
Expired / Lapsed
US
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Recrystallized CMOS with different crystal planes
Assignee: Hitachi Ltd
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Filing: 1985-09-11
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Granted: 1988-08-30
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Expires: 2005-09-11
Abstract
Abstract A CMOS IC is formed on a semiconductor crystalline surface having a plane azimuth (110) or (023), or of a plane azimuth close thereto (plane azimuth substantially in parallel with the above-mentioned planes), in order to increase the speed of operation. At low temperatures, dependency of the carrier mobility upon the plane azimuth becomes more conspicuous as shown in FIG. 1, and the difference of mobility is amplified depending upon the planes. Therefore, employment of the above-mentioned crystalline planes helps produce a great effect when the CMOS device is to be operated at low temperature (e.g., 100° K. or lower), and helps operate the device at high speeds.
Inventors
- 👤 Masaaki Aoki
- 👤 Toshiaki Masuhara
- 👤 Terunori Warabisako
- 👤 Shoji Hanamura
- 👤 Yoshio Sakai
- 👤 Seiichi Isomae
- 👤 Satoshi Meguro
- 👤 Shuji Ikeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 06:31
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10D62/405; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D84/80; H10D84/82; H10D84/83; H10D84/8311; H10D84/85; H10D84/856; H10D88/00; H10D88/01; H10D84/8312
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
103 words
A semiconductor device comprising: a semiconductor substrate which has a first substantially flat surface lying substantially parallel to a (100) plane; an insulating film formed on said first substantially flat surface; a semiconductor layer, which is deposited on said insulating film and recrystallized by laser irradiation, and which has a second substantially flat surface lying substantially parallel to a (110) plane; and source and drain regions of a n-channel MOS transistor formed at said first substantially flat surface of said semiconductor substrate, and source and drain regions of a p-channel MOS transistor formed at said second substantially flat surface of said semiconductor layer.
Claim 2
Dependent Claim
103 words
A semiconductor device comprising: a semiconductor substrate which has a first substantially flat surface lying substantially parallel to a (100) plane; an insulating film formed on said first substantially flat surface; a semiconductor layer, which is deposited on said insulating film and recrystallized by laser irradiation, and which has a second substantially flat surface lying substantially parallel to a (110) plane; and source and drain regions of a n-channel MOS transistor formed at said first substantially flat surface of said semiconductor substrate, and source and drain regions of a p-channel MOS transistor formed at said second substantially flat surface of said semiconductor layer.
Claim 3
Dependent Claim
19 words
A semiconductor device according to claim 1, wherein said semiconductor substrate and said semiconductor layer are formed of silicon.
Claim 4
Dependent Claim
14 words
A semiconductor device according to claim 2, wherein said semiconductor substrate has p-type conductivity.
Claim 5
Dependent Claim
20 words
A semiconductor device according to claim 1, wherein said insulating film includes at least a Si 3 N 4 film.
Claim 6
Dependent Claim
28 words
A semiconductor device according to claim 1, wherein said p-channel MOS transistor and said n-channel MOS transistor are connected with each other so as to form an inverter.
Claim 7
Dependent Claim
24 words
A semiconductor device according to any one of claims 1-5, wherein said semiconductor device is adapted to operate at a temperature below 100° K.
Claim 8
Dependent Claim
99 words
A semiconductor device comprising: a semiconductor substrate which has a first substantially flat surface lying substantially parallel to a (100) plane; an insulating film formed on said substantially flat surface; a semiconductor layer, which is deposited on said insulating film and recrystallized, and which has a second substantially flat surface lying substantially parallel to a (110) plane; and source and drain regions of a n-channel MOS transistor formed at said first substantially flat surface of said semiconductor substrate, and source and drain regions of a p-channel MOS transistor formed at said second substantially flat surface of said semiconductor layer.
Claim 9
Dependent Claim
99 words
A semiconductor device comprising: a semiconductor substrate which has a first substantially flat surface lying substantially parallel to a (100) plane; an insulating film formed on said substantially flat surface; a semiconductor layer, which is deposited on said insulating film and recrystallized, and which has a second substantially flat surface lying substantially parallel to a (110) plane; and source and drain regions of a n-channel MOS transistor formed at said first substantially flat surface of said semiconductor substrate, and source and drain regions of a p-channel MOS transistor formed at said second substantially flat surface of said semiconductor layer.
Claim 10
Dependent Claim
19 words
A semiconductor device according to claim 7, wherein said semiconductor substrate and said semiconductor layer are formed of silicon.
Claim 11
Dependent Claim
14 words
A semiconductor device according to claim 8, wherein said semiconductor substrate has p-type conductivity.
Claim 12
Dependent Claim
19 words
A semiconductor device according to claim 8, wherein said insulating film includes at least Si 3 N 4 film.
Claim 13
Dependent Claim
28 words
A semiconductor device according to claim 8, wherein said p-channel MOS transistor and said n-channel MOS transistor are connected with each other so as to form an inverter.
Claim 14
Dependent Claim
23 words
A semiconductor device according to any one of claims 7-11, wherein said semiconductor device is adapted to operate at temperature below 100° K.
References Cited (Backward Citations)
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| 7.5 Years (Year 8) | 1995-08-30 | 1996-02-29 | 1996-08-30 | $3760.00 | Window Closed / Lapsed |
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