US3603848A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Complementary field-effect-type semiconductor device
Assignee: Toshiba Corp
•
Filing: 1970-02-25
•
Granted: 1971-09-07
•
Expires: 1990-02-25
Abstract
Abstract A complementary field-effect-type semiconductor device comprising a unitary substrate of the diamond-type crystalline structure or a compound semiconductor of the zinc-blende-type crystalline structure and at least one pair of field-effect transistors having respective N and P channels lying along the main surface of the substrate and oriented in such a manner that the direction of current through one conductivity-type channel or channels is at right angles to the direction of current through the opposite conductivity-type channel or channels. The main surface and the channels are respectively selected to a special crystal face and a crystal axis.
Inventors
- 👤 Tai Sato
- 👤 Yoshiyuki Takeishi
- 👤 Yoshihiko Okamoto
- 👤 Hisashi Hara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 21:19
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/858; H10D62/00; H10D62/40; H10D62/405; Y; Y10; Y10S; Y10S148/00; Y10S148/053; Y10S148/072; Y10S148/115
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
155 words
A complementary field-effect-type semiconductor device comprising a substrate made of one semiconductor selected from the group consisting of a semiconductor of diamond-type structure and a compound semiconductor of zinc-blende-type structure, and at least one first and second transistors formed in the substrate, the transistors respectively including first and second active areas having a crystal face lying in a crystal plane, in which electron and hole currents flow respectively, wherein when said crystal face in said crystal plane is substantially in a (011) plane with an angle theta defined by the normal direction of said crystal face and a (011) axis ranging between 0* and 35*15'', the directions of flow of said electron and hole currents are respectively perpendicular and parallel to said (011) axis, and with said angle theta ranging from 35*16'' to less than 90*, the directions of flow of said electron and hole currents are respectively parallel and perpendicular to the (011) axis.
Claim 2
Dependent Claim
16 words
A semiconductor device according to claim 2 wherein said angle theta ranges from 48*46'' to 84*46''.
Claim 3
Dependent Claim
127 words
A complementary field-effect-type semiconductor device comprising a substrate made of one semiconductor selected from the group consisting of a semiconductor of diamond-type structure and a compound semiconductor of zinc-blende-type structure, and at least one first and second semiconductor transistors formed in the substrate, the transistors respectively including first and second active areas having a crystal face lying in a crystal plane, in which electron and hole currents flow respectively, wherein when said crystal face in said crystal plane is substantially in a (100) plane with an angle theta defined by the normal direction of the crystal face and a (011) axis ranging between 0* and less than 45*, the directions of flow of said electron and hole currents are respectively parallel and perpendicular to said (100) axis.
Claim 4
Dependent Claim
16 words
A semiconductor device according to claim 4 wherein said angle theta ranges from 6* to 37*20''.
Claim 5
Dependent Claim
41 words
A semiconductor device according to claim 5 wherein said first and second semiconductor transistors are respectively N-channel and P-channel metal insulation semiconductor field-effect transistors, the N channel and P channel of the respective transistors comprising first and second active areas respectively.
Claim 6
Dependent Claim
45 words
A semiconductor device according to claim 6 wherein the N channel and P channel of said respective transistors are arranged perpendicular to each other in the substrate to allow the extension of said channel of one transistor to intersect said channel of the other transistor.
References Cited (Backward Citations)
US2858730A
Cited
US2858246A
Cited
US3377182A
Cited
US3430109A
Cited
US3457473A
Cited
US3447902A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-09-06 | 1975-03-08 | 1975-09-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-09-06 | 1979-03-08 | 1979-09-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-09-06 | 1983-03-08 | 1983-09-07 | $7700.00 | Window Closed / Lapsed |