Abstract A semiconductor device in which a semiconductor of diamond-type structure or a compound semiconductor of zinc blende-type structure is used to utilize the flow of a hole current in an intense electric field, and has a construction such that when its crystal face is in (110) zone, and the angle theta of a normal direction of said specified crystal face with respect to the (110) axis is 0* -30* , 0* exclusive, then the direction of flow of the hole current is parallel to said (110); if theta 4090*, 90* exclusive, the direction of flow of the hole current is in the direction perpendicular to the (110) axis; if said crystal face is in the (001) zone and said normal direction makes an angle 0*-45*, both 0* and 45* exclusive, with the (110) axis, the direction of flow of the hole current is in the direction perpendicular to said (001) axis.
The semiconductor device as specified in claim 1 in which said direction of flow of hole current shifts from said crystal face with + or - 8* tolerances.
Claim 2
Dependent Claim
33 words
The semiconductor device as specified in claim 1 in which said crystal face is parallel to a (112) crystal face or parallel to the (112) crystal face with + or - 8* tolerances.
Claim 3
Dependent Claim
29 words
The semiconductor device as specified in claim 1 in which the intensity of a high electric field formed within the active area is more than 1 X 104 v./cm.
Claim 4
Dependent Claim
99 words
The semiconductor device as specified in claim 1 in which said substrate comprises source and drain regions separately formed on the surface of the substrate and each having a conductivity opposite to that of the substrate, an insulating film formed on the surface of said substrate between said source and drain regions, a gate electrode formed on said insulating film, and a channel formed between the source and drain regions at that portion which is right below said insulating film, source region, drain region, and said channel constituting said active areas, and said hole current flowing through said channel.