US4766084A
Expired / Lapsed
US
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Process for the production of an electric contact on a HgCdTe substrate with a P conductivity and application to the production of an N/P diode
Assignee: Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
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Filing: 1987-09-16
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Granted: 1988-08-23
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Expires: 2007-09-16
Abstract
Abstract The invention relates to a process for producing an electric contact on a HgCdTe substrate having a P conductivity and application to the production of an N/P diode. For producing an N/P diode, an insulating layer deposited on the HgCdTe substrate is etched by ion bombardment through a first mask, so as to produce a first opening in said insulating layer. The mask is removed and the substrate covered by the insulating layer undergoes a heat treatment, so as to at least mitigate the P conductivity drop induced by the ion bombardment in a first portion of the substrate facing the first opening. This is followed by ion implantation in a second portion of the substrate through a second mask in order to produce an N conductivity portion. This second mask is removed and the insulating layer is etched through a third mask by ion bombardment in order to produce a second opening facing the second portion. After removing the third mask, conductive pads are produced in the first and second openings.
Inventors
- 👤 Cecile Bory
- 👤 Jean-Louis O. Buffet
- 👤 Guy Parat
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 07:25
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10D; H10D62/00; H10D62/80; H10D62/86; H10D62/862; H10D64/00; H10D64/01; H10D64/011; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2212; H10F77/00; H10F77/10; H10F77/12; H10F77/123; H10F77/1237; H10P30/21; H10P30/22; H10P30/28
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
117 words
A process for the production of an electric contact on a HgCdTe substrate of P conductivity, wherein at least one insulating layer is deposited on said substrate, the entire thickness of the insulating layer is etched by ion bombardment so as to produce an opening in said insulating layer, the substrate covered by the insulating layer undergoes a heat treatment, so as to at least mitigate the P conductivity drop induced by the ion bombardment in that portion of the substrate facing the opening made in the insulating layer, and a conductive pad is formed in the opening made in the insulating layer to form an electric contact with that portion of the substrate facing the opening.
Claim 2
Dependent Claim
117 words
A process for the production of an electric contact on a HgCdTe substrate of P conductivity, wherein at least one insulating layer is deposited on said substrate, the entire thickness of the insulating layer is etched by ion bombardment so as to produce an opening in said insulating layer, the substrate covered by the insulating layer undergoes a heat treatment, so as to at least mitigate the P conductivity drop induced by the ion bombardment in that portion of the substrate facing the opening made in the insulating layer, and a conductive pad is formed in the opening made in the insulating layer to form an electric contact with that portion of the substrate facing the opening.
Claim 3
Dependent Claim
44 words
A process according to claim 1, wherein the substrate undergoes annealing prior to the deposition of the insulating layer, in order to adjust the P conductivity of the substrate to a desired values, the heat treatment and annealing being performed at the same temperature.
Claim 4
Dependent Claim
17 words
A process according to claim 1, wherein first and second insulating layers are deposited on the substrate.
Claim 5
Dependent Claim
67 words
A process according to claim 1, wherein the opening in the insulating layer is produced by ion bombardment through a resin mask deposited on the said layer and having an opening facing the opening to be produced in said layer, and the mask is thermally treated in order to make the resin flow into the opening of said mask before making the opening in the insulating layer.
Claim 6
Dependent Claim
16 words
A process according to claim 1, wherein the heat treatment is performed under a mercury atmosphere.
Claim 7
Dependent Claim
42 words
A process according to claim 1, wherein the heat treatment is performed following the vacuum deposition on that portion of the substrate facing the opening made in the insulating layer of an insulating material, the latter being eliminated after said heat treatment.
Claim 8
Dependent Claim
61 words
A process according to claim 1, wherein the heat treatment is carried out following the vacuum deposition on that portion of the substrate facing the opening made in the insulating layer of a metallic material incorporating atoms having a P character, in order to obtain a P conductivity in said substrate portion which exceeds that of the remainder of the substrate.
Claim 9
Dependent Claim
34 words
A process according to claim 1, wherein the heat treatment is performed at a temperature exceeding 200° C. and equal to the annealing temperature which has previously fixed the P conductivity of the substrate.
Claim 10
Dependent Claim
182 words
A process for producing an N/P diode from a P conductivity, HgCdTe substrate, wherein, successively, at least one insulating layer is deposited on said substrate, the entire thickness of the insulating layer is etched by ion bombardment in order to produce a first opening in the insulating layer, a heat treatment is carried out on the substrate covered by the insulating layer, so as to at least mitigate the P conductivity drop induced by the ion bombardment in a first portion of the substrate facing the first opening, ion implantation takes place in the heat treated substrate through the insulating layer in order to form in said substrate a second portion of N conductivity spaced from the first part, the entire thickness of the insulating layer is etched by ion bombardment, so as to produce a second opening in the insulating layer facing the second portion and conductive pads are formed in the first and second openings of the insulating layer, in order to produce an electric contact with each of said first and second portions of the substrate facing said openings.
Claim 11
Dependent Claim
182 words
A process for producing an N/P diode from a P conductivity, HgCdTe substrate, wherein, successively, at least one insulating layer is deposited on said substrate, the entire thickness of the insulating layer is etched by ion bombardment in order to produce a first opening in the insulating layer, a heat treatment is carried out on the substrate covered by the insulating layer, so as to at least mitigate the P conductivity drop induced by the ion bombardment in a first portion of the substrate facing the first opening, ion implantation takes place in the heat treated substrate through the insulating layer in order to form in said substrate a second portion of N conductivity spaced from the first part, the entire thickness of the insulating layer is etched by ion bombardment, so as to produce a second opening in the insulating layer facing the second portion and conductive pads are formed in the first and second openings of the insulating layer, in order to produce an electric contact with each of said first and second portions of the substrate facing said openings.
Claim 12
Dependent Claim
44 words
A process according to claim 9, wherein the substrate is annealed prior to the deposition of the insulating layer, in order to adjust the P conductivity of the substrate to a desired value, the heat treatment and annealing being performed at the same temperature.
Claim 13
Dependent Claim
64 words
A process according to claim 9, wherein the heat treatment is performed following the vacuum deposition on the first part of the substrate facing the first opening made in the insulating layer of a metallic material having atoms with a P character, in order to obtain a P conductivity in said first part of the substrate exceeding that of the remainder of the substrate.
Claim 14
Dependent Claim
34 words
A process according to claim 9, wherein the heat treatment is performed at a temperature exceeding 200° C. and equal to the annealing temperature which has previously fixed the P conductivity of the substrate.
Claim 15
Dependent Claim
71 words
A production process according to claim 9, wherein the first opening of the insulating layer is produced by ion bombardment through a resin mask deposited on said insulating layer and having an opening facing the first opening to be produced in said layer, and said mask is thermally treated in order to cause a flow of resin into the opening of said mask prior to the production of said first opening.
Claim 16
Dependent Claim
69 words
A process according to claim 9, wherein the second opening of the insulating layer is produced by ion bombardment through a resin mask deposited on said insulating layer and having an opening facing the second opening to be produced on the said layer, so that said mask undergoes a heat treatment in order to make the resin flow into the opening of the mask before producing the second opening.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-08-23 | 1992-02-22 | 1992-08-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-08-23 | 1996-02-22 | 1996-08-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-08-23 | 2000-02-22 | 2000-08-23 | $7700.00 | Window Closed / Lapsed |