US3988774A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing a photodiode sensitive to infrared radiation
Assignee: Societe Anonyme de Telecommunications SAT
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Filing: 1975-04-28
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Granted: 1976-10-26
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Expires: 1995-04-28
Abstract
Abstract A process for producing a photodiode sensitive to infrared radiation, obtained by the planar technique, constituted by a semiconducting material comprising a substrate of type p (or n) and a zone of type n (or p) forming the junction, wherein a thin layer is deposited on the substrate surface by a per se known process, the said thin layer being constituted by a compound whose constituents are taken from among those of the substrate, whereby the proportions thereof are the same or close to those of the said substrate, a dielectric protective layer is deposited on the said thin layer, the material thus obtained is thermally treated, a diffusion of the zone of the other type is effected in order to form the junction and local deposits of metal are made on the surface of the said dielectric layer.
Inventors
- 👤 Gerard David Cohen-Solal
- 👤 Alain Gilles Lussereau
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 12:31
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/125; H10F71/1253; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2212; H10F99/00; H10P; H10P14/00; H10P14/60; H10P14/69; Y; Y10; Y10S; Y10S148/00; Y10S148/153
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
140 words
A process for producing a photodiode responsive to infrared radiation, which comprises the steps of depositing a thin layer over a p- or n- substrate of semiconductor material, said thin layer being of an electrically insulating material having a coefficient of expansion, a crystal lattice and a composition close to that of said semiconductor material, and the compositions of said semiconductor and said thin layer being the same or closely similar in proportions, depositing a dielectric protective layer over said thin layer, thermally treating the resulting product to bring about diffusion between said thin layer and said substrate, forming openings in said dielectric layer and said thin layer by planar technique, forming doped areas of opposite conductivity to the substrate through said openings to create a p-n junction and metallizing a part of the insulating material with electrically conducting metal.
Claim 2
Dependent Claim
140 words
A process for producing a photodiode responsive to infrared radiation, which comprises the steps of depositing a thin layer over a p- or n- substrate of semiconductor material, said thin layer being of an electrically insulating material having a coefficient of expansion, a crystal lattice and a composition close to that of said semiconductor material, and the compositions of said semiconductor and said thin layer being the same or closely similar in proportions, depositing a dielectric protective layer over said thin layer, thermally treating the resulting product to bring about diffusion between said thin layer and said substrate, forming openings in said dielectric layer and said thin layer by planar technique, forming doped areas of opposite conductivity to the substrate through said openings to create a p-n junction and metallizing a part of the insulating material with electrically conducting metal.
Claim 3
Dependent Claim
16 words
A production process according to claim 1, wherein said thin layer is deposited by cathodic sputtering.
Claim 4
Dependent Claim
17 words
A production process according to claim 1, wherein the said thin layer is deposited by epitaxial growth.
Claim 5
Dependent Claim
18 words
A production process according to claim 1, wherein the said thin layer is deposited by evaporation under vacuum.
Claim 6
Dependent Claim
26 words
A production process according to claim 1, wherein said semiconductor material is composed of Hg Cd Te and said thin layer is composed of Cd Te.
Claim 7
Dependent Claim
13 words
A photodiode responsive to infrared radiation produced by the process of claim 1.
References Cited (Backward Citations)
US3753805A
Cited
US3576478A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-10-26 | 1980-04-26 | 1980-10-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-10-26 | 1984-04-26 | 1984-10-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-10-26 | 1988-04-26 | 1988-10-26 | $7700.00 | Window Closed / Lapsed |