EP0062367A1
Expired / Lapsed
EP
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Method of manufacturing a detector device and detector device obtained
Assignee: Philips Electronics UK Ltd
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Filing: 1982-03-11
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Granted: —
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Expires: 2002-03-11
Abstract
Abstract In the manufacture of an infra-red radiation detector device, a body (10) of p-type cadmium mercury telluride is bombarded with ions (11) to etch away a part (21) of the body (10) and to produce from the etched-away part of the body an excess concentration of mercury which acts as a dopant source converting an adjacent part (22) of the body (10) into n-type material. The energy of the bombarding ions is less than 30 keV, and by appropriately choosing the ion dose this conversion can be effected over a depth considerably greater than the penetration depth of the ions (11). A p-n junction (23) can be fabricated in this way for a photo-voltaic detector. The conductivity type conversion may even be effected through the body thickness. The etching and conversion can be localised by masking part of the body surface (20) against the ion bombardment.
Inventors
- 👤 John Thomas Mclean Wotherspoon
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 08:36
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/134; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2212; H10P; H10P34/00; H10P34/40; Y; Y10; Y10S; Y10S438/00; Y10S438/971
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
204 words
A method of manufacturing an infra-red radiation detector device of cadmium mercury telluride, comprising the steps of (a) providing a body of cadmium mercury telluride at least a portion of which has conductivity characteristics of p-type material at the operating temperature of the device, and (b) bombarding with ions at least a part of a surface of the body to convert at least a part of said body portion into material having conductivity characteristics of n-type material at the operating temperature of the device, characterized in that the ion bombardment is effected using ion etching to etch away a part of the body at the bombarded surface, and in that the dose, energy and mass of the bombarding ions are such that adjacent the bombarded surface a sufficient excess concentration of mercury is produced from the etched-away part of the body as to act as a dopant source for converting an adjacent part of said body into material having the n-type conductivity characteristics, said ion dose being sufficiently large to convert said adjacent part of the body over a depth greater than twice the penetration depth of said ions in said body, and the energy of the bombarding ions being less than 30 keV.
Claim 2
Independent Claim
204 words
A method of manufacturing an infra-red radiation detector device of cadmium mercury telluride, comprising the steps of (a) providing a body of cadmium mercury telluride at least a portion of which has conductivity characteristics of p-type material at the operating temperature of the device, and (b) bombarding with ions at least a part of a surface of the body to convert at least a part of said body portion into material having conductivity characteristics of n-type material at the operating temperature of the device, characterized in that the ion bombardment is effected using ion etching to etch away a part of the body at the bombarded surface, and in that the dose, energy and mass of the bombarding ions are such that adjacent the bombarded surface a sufficient excess concentration of mercury is produced from the etched-away part of the body as to act as a dopant source for converting an adjacent part of said body into material having the n-type conductivity characteristics, said ion dose being sufficiently large to convert said adjacent part of the body over a depth greater than twice the penetration depth of said ions in said body, and the energy of the bombarding ions being less than 30 keV.
Claim 3
Dependent Claim
32 words
A method as claimed in Claim 1, further characterized in that said ion-etching is terminated when a p-n junction of desired depth is formed in the body by the n-type converted part.
Claim 4
Dependent Claim
24 words
A method as claimed in Claim 2, further characterized in that said p-n junction is formed to a depth of at least 2 micrometres.
Claim 5
Dependent Claim
54 words
A method as claimed in Claim 2 or Claim 3, further characterized in that during said ion-etching a masking layer is present on said surface of the body and has a window to restrict the etching and conversion to a localised area at said window so forming said p-n junction extending from said surface.
Claim 6
Independent Claim
29 words
A method as claimed in any of Claims 2 to 4, further characterized in that said p-n junction forms the active junction of a photo-voltaic infra-red radiation detector device.
Claim 7
Dependent Claim
37 words
A method as claimed in Claim 1, further characterized in that said ion-etching is continued for a time sufficient to convert the remaining part of said body into n-type material across the whole thickness of said body.
Claim 8
Dependent Claim
17 words
An infra-red radiation detector device manufactured by a method claimed in any of Claims 1 to 6.
References Cited (Backward Citations)
US3562022A
Cited
EP0007667A1
Cited
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