Formation of photo receiving element

Abstract

Abstract PURPOSE:To obtain a diffused layer of a fixed surface area without a mask of an insulation film by providing a recess in a semiconductor substrate and then flatting it to the same as the surface of thd recess after diffusing an impurity of a reverse conductivity type more shallowly than the recess over the entire surface. CONSTITUTION:The recess 52 is formed deeper than a desired diffused layer by selectively etching a fixed region of the P type substrate 51 of an HgCdTe. When an N type layer 53 is provided by Hg ion implantation, and the substrate 51 is so removed by ion beam etching as to become the same plane as the recess 52, the N-layer 53' of a fixed surface area can be easily obtained. Thereafter, it is covered with a ZnS 54 as conventional, electrode windows 55 and 56 are provided, and electrode wirings 57 and 58 composed of In or Au are attached. This constitution enables to obtain a photo receiving element having a photo receiving surface of a fixed surface layer with a good yield without the mask of an insulation film for diffusion purpose.

Inventors

• 👤 Shigeki Hamashima
• 👤 濱嶋　茂樹

Bibliographic Details