Patent US5215084A successfully refreshed from Google Patents.
Patent US4763185A successfully refreshed from Google Patents.
US4763185A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method of manufacturing same
Assignee: US Philips Corp
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Filing: 1983-06-24
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Granted: 1988-08-09
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Expires: 2003-06-24
Abstract
Abstract A semiconductor device comprises a semiconductor body having a surface provided with a first insulating layer. On this first insulating layer at least one pattern of conductor strips, coated with insulation strips having projecting edges, is provided. Under projecting edges of a second insulating layer, the conductor strips are coated with insulating tracks which fill the spaces under the edges and which at least at the area where they adjoin the first insulating layer can be selectively etched with respect to this layer. The conductor strips may be made of materials other than polycrystalline silicon, such as tungsten, molybdenum, and silicides of these metals. The thickness of the first insulating layer is affected to a very small extent during manufacture of the device, while its depth remains unchanged.
Inventors
- 👤 Hermanus L. Peek
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 20:40
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/01; H10D44/041; H10D84/00; H10D84/01; H10D84/0198; H10D84/02; H10D84/03; H10D84/038; Y; Y10; Y10S; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
134 words
A semiconductor device comprising: a semiconductor body having a surface, a first insulating layer on the surface, at least one pattern of conductor strips on the first insulating layer, a pattern of a second insulating layer comprising strips overlying each of the conductor strips, the second insulating layer being of the same material as that of the first insulating layer, and the insulating strips having edges projecting beyond the conductor strips to form tracks between the first and second insulating layers, and a pattern of a third insulating layer covering at least the sides of the conductor strips in the tracks, the third insulating layer being of a different material than that of the first and second insulating layers, and the third insulating layer being selectively etchable with respect to the first insulating layer.
Claim 2
Dependent Claim
134 words
A semiconductor device comprising: a semiconductor body having a surface, a first insulating layer on the surface, at least one pattern of conductor strips on the first insulating layer, a pattern of a second insulating layer comprising strips overlying each of the conductor strips, the second insulating layer being of the same material as that of the first insulating layer, and the insulating strips having edges projecting beyond the conductor strips to form tracks between the first and second insulating layers, and a pattern of a third insulating layer covering at least the sides of the conductor strips in the tracks, the third insulating layer being of a different material than that of the first and second insulating layers, and the third insulating layer being selectively etchable with respect to the first insulating layer.
Claim 3
Dependent Claim
17 words
A semiconductor device according to claim 1 wherein the third insulating layer pattern substantially fills the tracks.
Claim 4
Dependent Claim
38 words
A semiconductor device according to claim 1, wherein a pattern of a fourth insulating layer of the same material as that of the first and second insulating layers overlies the third insulating layer and substantially fills the tracks.
Claim 5
Dependent Claim
84 words
A semiconductor device according to claim 1, wherein a second pattern of the conductor strips is provided on the first insulating layer, and a second pattern of strips of the second insulating layer overlies each of the conductor strips, the insulating strips having edges projecting beyond the conductor strips to form tracks between the first and second insulating layers, and a second pattern of the third insulating layer covers at least the sides of the conductor strips in the tracks of the second pattern.
Claim 6
Dependent Claim
83 words
A semiconductor device according to claim 4, wherein a third pattern of conductor strips is provided on the first insulating layer, and a third pattern of strips of the second insulating layer overlies each of the conductor strips, the insulating strips having edges projecting beyond the conductor strips to form tracks between the first and second insulating layers, and a third pattern of the third insulating layer covers at least the sides of the conductor strips in the tracks of the third pattern.
Claim 7
Dependent Claim
19 words
A semiconductor device according to claim 4, wherein said conductor strips of said first and second patterns are parallel.
Claim 8
Dependent Claim
20 words
A semiconductor device according to claim 1, wherein said conductor strips of said first, second and third patterns are parallel.
Claim 9
Dependent Claim
25 words
A semiconductor device according to claim 1, wherein said first and second insulating layers are silicon oxide and said third insulating layer is silicon nitride.
Claim 10
Dependent Claim
25 words
A semiconductor device according to claim 1, wherein said first and second insulating layers are silicon nitride and said third insulating layer is silicon oxide.
Claim 11
Dependent Claim
15 words
A semiconductor device according to claim 1, wherein said conductor strips are of polycrystalline silicon.
Claim 12
Dependent Claim
22 words
A semiconductor device according to claim 1, wherein said conductor strips are one of tungsten, molybdenum, and silicides of tungsten and molybdenum.
Claim 13
Dependent Claim
19 words
A semiconductor device according to claim 5, wherein said conductor strips of said pattern of conductor strips are parallel.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-08-09 | 1992-02-08 | 1992-08-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-08-09 | 1996-02-08 | 1996-08-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-08-09 | 2000-02-08 | 2000-08-09 | $7700.00 | Window Closed / Lapsed |