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US4753258A Expired / Lapsed US ⏱️ 0.0 years remaining

Treatment basin for semiconductor material

Assignee: Individual
•
Filing: 1985-08-06
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Granted: 1988-06-28
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Expires: 2005-08-06
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Abstract

Abstract This disclosure includes an improvement relating to a square basin for applying a treatment such as etching, development, plating or washing to surfaces of semiconductor materials housed in a carrier which is supported in the basin, by a treatment liquid introduced upwardly through a passage formed in the bottom portion of the basin and then overflown at a top periphery of the basin. The improvement exists in the formation of two rows of holes in the bottom portion of the basin. These holes are adapted to discharge a treatment liquid in an inward-upward direction so as to cause a up and down swirling in the treatment liquid in the basin. This obviates local or partial stagnations of treatment liquid in the basin and effects a treatment.

Inventors

  • 👤 Aigo Seiichiro

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 08:55
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0404; Y; Y10; Y10S; Y10S134/00; Y10S134/902

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 192 words
A square basin for applying a treatment such as etching, development, plating or washing to surfaces of semiconductor materials supported in a carrier having at least two leg portions, said basin comprising: a base, the surface of said base facing the treatment liquid being downwardly slanting, and four side walls, said carrier being disposed within said basin, a passage in the center of the base at the bottom of said downwardly-slanting surface for introducing treatment liquid upwardly into the basin, said liquid then overflowing the top periphery of the side walls of the basin, two essentially parallel channels integrally formed within the base of the basin, two rows of inwardly-upwardly directed straight holes of 0.5 to 2.0 mm diameter integrally formed within the base of the basin, each row connecting one of the channels to the inside of the basin, the holes in one row being in staggered relation to the holes in the other row, wherein each hole discharges a single jet of treatment liquid in an upward-inward direction into a zone between the leg portions of the carrier, to thereby cause an up and down swirling motion in the liquid.
Claim 2
Dependent Claim 192 words
A square basin for applying a treatment such as etching, development, plating or washing to surfaces of semiconductor materials supported in a carrier having at least two leg portions, said basin comprising: a base, the surface of said base facing the treatment liquid being downwardly slanting, and four side walls, said carrier being disposed within said basin, a passage in the center of the base at the bottom of said downwardly-slanting surface for introducing treatment liquid upwardly into the basin, said liquid then overflowing the top periphery of the side walls of the basin, two essentially parallel channels integrally formed within the base of the basin, two rows of inwardly-upwardly directed straight holes of 0.5 to 2.0 mm diameter integrally formed within the base of the basin, each row connecting one of the channels to the inside of the basin, the holes in one row being in staggered relation to the holes in the other row, wherein each hole discharges a single jet of treatment liquid in an upward-inward direction into a zone between the leg portions of the carrier, to thereby cause an up and down swirling motion in the liquid.
Claim 3
Dependent Claim 26 words
A square basin as claimed in claim 1, further comprising a gutter formed around the upper periphery of the side walls to collect overflown treatment liquid.
Claim 4
Dependent Claim 24 words
A square basin as claimed in claim 2, further comprising means to pump treatment fluid from the gutter to the passage and the channels.
Claim 5
Dependent Claim 23 words
A square basin as claimed in claim 1, wherein the diameter of the passage is substantially larger than the diameter of the holes.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1991-06-28 1991-12-28 1992-06-28 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1995-06-28 1995-12-28 1996-06-28 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1999-06-28 1999-12-28 2000-06-28 $7700.00 Window Closed / Lapsed

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