Patent US4752592A successfully refreshed from Google Patents.
US4752592A
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Annealing method for compound semiconductor substrate
Assignee: Panasonic Holdings Corp
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Filing: 1986-11-28
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Granted: 1988-06-21
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Expires: 2006-11-28
Abstract
Abstract An annealing method for a GaAs wafer which uses incoherent light, e.g., infrared light generated from tungsten lamp, halogen lamp, etc. and a GaAs guard ring which surrounds the GaAs wafer. The thickness of the guard ring is 1.5 times more than that of the GaAs wafer, the internal diameter of the guard ring is less than diameter of GaAs wafer plus 3 mm and the width of the guard ring is less than 10 mm.
Inventors
- 👤 Akiyoshi Tamura
- 👤 Takeshi Onuma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 15:30
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10P34/422; Y; Y10; Y10S; Y10S148/00; Y10S148/004
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
82 words
An annealing method for GaAs wafer comprising; providing a GaAs guard ring on a GaAs wafer in such manner that said GaAs wafer is disposed inside said GaAs guard ring, said GaAs wafer being disposed face down on a GaAs base wafer which is disposed on said silicon wafer and wherein the thickness of said GaAs guard ring is three times more than that of said GaAs wafer plus GaAs base wafer; and applying infrared light on said GaAs wafer for annealing.
Claim 2
Dependent Claim
82 words
An annealing method for GaAs wafer comprising; providing a GaAs guard ring on a GaAs wafer in such manner that said GaAs wafer is disposed inside said GaAs guard ring, said GaAs wafer being disposed face down on a GaAs base wafer which is disposed on said silicon wafer and wherein the thickness of said GaAs guard ring is three times more than that of said GaAs wafer plus GaAs base wafer; and applying infrared light on said GaAs wafer for annealing.
Claim 3
Dependent Claim
58 words
The annealing method of claim 1, wherein the thickness of said guard ring is 1.5 times more than that of said compound semiconductor substrate, and the internal diameter of said guard ring is less than the diameter of said compound semiconductor substrate plus 3 mm, and wherein the width of said guard ring is more than 10 mm.
Claim 4
Dependent Claim
91 words
An annealing method for a GaAs semiconductor substrate comprising: providing a GaAs guard ring in such manner that said GaAs guard ring surrounds said GaAs semiconductor substrate, and applying infrared light on said GaAs semiconductor substrate, wherein the thickness of said GaAs guard ring is 1.5 times more than that of said GaAs semiconductor substrate, and the internal diameter of said GaAs guard ring is less than the diameter of said GaAs semiconductor substrate plus 3 mm, and wherein the width of said GaAs guard ring is more than 10 mm.
Claim 5
Dependent Claim
91 words
An annealing method for a GaAs semiconductor substrate comprising: providing a GaAs guard ring in such manner that said GaAs guard ring surrounds said GaAs semiconductor substrate, and applying infrared light on said GaAs semiconductor substrate, wherein the thickness of said GaAs guard ring is 1.5 times more than that of said GaAs semiconductor substrate, and the internal diameter of said GaAs guard ring is less than the diameter of said GaAs semiconductor substrate plus 3 mm, and wherein the width of said GaAs guard ring is more than 10 mm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-06-21 | 1991-12-21 | 1992-06-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-06-21 | 1995-12-21 | 1996-06-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-06-21 | 1999-12-21 | 2000-06-21 | $7700.00 | Window Closed / Lapsed |