Heat treatment method for semiconductor wafer

Abstract

Abstract PURPOSE:To keep the uniformity of temperature, and to execute the heat treatment of equal oxidation, diffusion, etc. by preventing the effect of the escape of radiant heat at both ends of a boat for the heat treatment on a soaking length section. CONSTITUTION:The AB of a temperature distribution curve before insertion is the soaking length of an oven in the figure, and the length C'D' of the boat 1 inserted into the oven is formed at value longer than the soaking length. The semiconductor wafers 3 are erected in parallel on a section corresponding to the soaking length of the boat 1 for the heat treatment, and semiconductor wafers 4, 5 for dummies are erected in parallel at the outsides. The radiation of radiant heat in the lateral direction is prevented because the semiconductor wafers 4, 5 for the dummies are arranged outside the semiconductor wafers 3 to be thermally treated, and the semiconductor wafers for the heat treatment are thermally treated under approximately the same condition extending over the whole region because they are under thermal environment approximately the same as the semiconductor wafers at the central section.

Inventors

• 👤 Sokichi Yamagishi
• 👤 山岸　壮吉

Bibliographic Details