Patent US4751708A successfully refreshed from Google Patents.
US4751708A
Expired / Lapsed
US
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Semiconductor injection lasers
Assignee: International Business Machines Corp
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Filing: 1982-03-29
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Granted: 1988-06-14
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Expires: 2002-03-29
Abstract
Abstract Degradation of the cleaved light output surface of a semiconductor crystal injection laser is reduced through control of surface recombination by providing an annealed optically transparent coating at least one ingredient of which has a higher bandgap than said crystal over the cleaved light output surface. Crystals of GaAs, GaAlAs and GaInAsP are provided with annealed coatings of ZnS, CdS, CdTe and CdSe.
Inventors
- 👤 Thomas N. Jackson
- 👤 Jerry M. Woodall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:00
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/028; H01S5/0281; H10; H10H; H10H20/00; H10H20/80
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
66 words
In a semiconductor crystal laser of the type having an active lasing region in a laser crystal of semiconductor material essentially perpendicular to a cleaved light output surface, the improvement for reducing heating produced by carrier surface recombination at said cleaved surface comprising, an annealed coating of an optically transparent compound, at least one element thereof having a higher bandgap than that of said laser crystal.
Claim 2
Dependent Claim
66 words
In a semiconductor crystal laser of the type having an active lasing region in a laser crystal of semiconductor material essentially perpendicular to a cleaved light output surface, the improvement for reducing heating produced by carrier surface recombination at said cleaved surface comprising, an annealed coating of an optically transparent compound, at least one element thereof having a higher bandgap than that of said laser crystal.
Claim 3
Dependent Claim
19 words
The laser of claim 1 wherein said semiconductor is selected from the group consisting of GaAs, GaAlAs and GaInAsP.
Claim 4
Dependent Claim
21 words
The laser of claim 2 wherein said annealed coating is selected from the group consisting of NZnS, CdS, CdTe and CdSe.
Claim 5
Dependent Claim
59 words
In a semiconductor crystal injection laser having at least one cleaved light output surface and ohmic contacts on the surfaces perpendicular thereto, the improvement comprising an annealed optically transparent coating of a surface recombination control material, at least one ingredient of which has a bandgap greater than that of said semiconductor crystal covering said at least one cleaved surface.
Claim 6
Dependent Claim
59 words
In a semiconductor crystal injection laser having at least one cleaved light output surface and ohmic contacts on the surfaces perpendicular thereto, the improvement comprising an annealed optically transparent coating of a surface recombination control material, at least one ingredient of which has a bandgap greater than that of said semiconductor crystal covering said at least one cleaved surface.
Claim 7
Dependent Claim
42 words
The improvement of claim 4 wherein said semiconductor crystal of said laser is selected from a group consisting of GaAs, GaAlAs and GaInAsP and said recombination control material is a member selected from the group consisting of ZnS, CdS, CdTe and CdSe.
References Cited (Backward Citations)
US3849738A
Cited
US4062035A
Cited
US4001719A
Cited
US4178564A
Cited
GB2005917A
Cited
JPS5527474A
Cited
GB2047962A
Cited
US4354198A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-06-14 | 1991-12-14 | 1992-06-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-06-14 | 1995-12-14 | 1996-06-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-06-14 | 1999-12-14 | 2000-06-14 | $7700.00 | Window Closed / Lapsed |