US4062035A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Luminescent diode
Assignee: Siemens AG
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Filing: 1977-01-28
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Granted: 1977-12-06
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Expires: 1997-01-28
Abstract
Abstract A semiconductor luminescent device is disclosed of the MIS type which has a semiconductor body, a semiconductor monocrystalline insulating layer on one surface of the body and an electrode on the outer major surface of the insulating layer, which electrode is light transmissive. The crystal structure of the insulating layer is substantially the same as the crystal structure of the semiconductor body and has a spacing of energy bands which is greater than the light quanta which are emitted during a radiative recombination of charge carriers in the semiconductor body. The interval of the energy bands of the insulating layer is at least 2 kT greater than the interval of the energy bands of the semiconductor body. It is preferable that the crystal structure of the insulating layer have a deviation of its lattice interval of less than 1% from that of the semiconductor body.
Inventors
- 👤 Guenter Winstel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:56
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/84; H10H20/052; H10H20/83; H10H20/832; H10H20/833
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
74 words
A semiconductor luminescent diode comprising a semiconductor body, a layer of insulating material on this semiconductor body, and a layer of conductive material arranged upon said insulating layer, the layer of insulating material being monocrystalline having the crystal structure of the semiconductor body, and having a spacing of energy bands which is greater than the energy of the light quanta which are emitted during a radiative recombination of charge carriers in the semiconductor body.
Claim 2
Dependent Claim
74 words
A semiconductor luminescent diode comprising a semiconductor body, a layer of insulating material on this semiconductor body, and a layer of conductive material arranged upon said insulating layer, the layer of insulating material being monocrystalline having the crystal structure of the semiconductor body, and having a spacing of energy bands which is greater than the energy of the light quanta which are emitted during a radiative recombination of charge carriers in the semiconductor body.
Claim 3
Dependent Claim
26 words
A luminescent diode as claimed in claim 1, in which the layer of insulating material possesses a thickness of between approximately 50 nm and 1,000 nm.
Claim 4
Dependent Claim
22 words
A luminescent diode as claimed in claim 1, in which said layer of insulating material is epitaxially formed on said semiconductor body.
Claim 5
Dependent Claim
16 words
A luminescent diode as claimed in claim 1, in which said conductive layer is itself light-transmissive.
Claim 6
Dependent Claim
24 words
A luminescent diode as claimed in claim 1, in which said semiconductor body is GaAs, and said insulating layer is a GaAlAs mixed crystal.
Claim 7
Dependent Claim
24 words
A luminescent diode as claimed in claim 1, in which said semiconductor body is GaP, and said insulating layer is a GaAlP mixed crystal.
Claim 8
Dependent Claim
67 words
A semiconductor luminescent diode comprising a semiconductor body, a layer of insulating material on said semiconductor body, and a layer of conductive material arranged upon said insulating layer, the layer of insulating material being monocrystalline having the crystal structure of the semiconductor body, the band spacing of the energy bands of said insulating layer being at least 2KT larger than the band spacing of said semiconductor body.
Claim 9
Dependent Claim
67 words
A semiconductor luminescent diode comprising a semiconductor body, a layer of insulating material on said semiconductor body, and a layer of conductive material arranged upon said insulating layer, the layer of insulating material being monocrystalline having the crystal structure of the semiconductor body, the band spacing of the energy bands of said insulating layer being at least 2KT larger than the band spacing of said semiconductor body.
Claim 10
Dependent Claim
63 words
A semiconductor luminescent diode comprising a semiconductor body, a layer of insulating material interfaced with one surface of said semiconductor body, and a layer of conductive material formed on the outer surface of said insulating layer and interfaced therewith, said insulating layer having substantially the same lattice interval as the lattice interval of said semiconductor body and deviating therefrom by less than 1%.
Claim 11
Dependent Claim
63 words
A semiconductor luminescent diode comprising a semiconductor body, a layer of insulating material interfaced with one surface of said semiconductor body, and a layer of conductive material formed on the outer surface of said insulating layer and interfaced therewith, said insulating layer having substantially the same lattice interval as the lattice interval of said semiconductor body and deviating therefrom by less than 1%.
Claim 12
Dependent Claim
23 words
A luminescent diode according to claim 7, in which said insulating layer has a thickness of between approximately 50 nm and 1,000 nm.
Claim 13
Dependent Claim
22 words
A luminescent diode according to claim 8, in which said insulating layer has a thickness between approximately 50 nm and 1,000 nm.
Claim 14
Dependent Claim
102 words
A semiconductor luminescent diode comprising a semiconductor body, a layer of insulating material interfaced with one surface of said semiconductor body, and a layer of conductive material formed on the outer surface of said insulating layer and interfaced therewith, said insulating layer having substantially the same lattice interval as the lattice interval of said semiconductor body and deviating therefrom by less than 1%, said layer of insulating material being monocrystalline having the crystal structure of the semiconductor body, the band spacing of the energy bands of said insulating layer being at least 2kT larger than the band spacing of said semiconductor body.
Claim 15
Dependent Claim
102 words
A semiconductor luminescent diode comprising a semiconductor body, a layer of insulating material interfaced with one surface of said semiconductor body, and a layer of conductive material formed on the outer surface of said insulating layer and interfaced therewith, said insulating layer having substantially the same lattice interval as the lattice interval of said semiconductor body and deviating therefrom by less than 1%, said layer of insulating material being monocrystalline having the crystal structure of the semiconductor body, the band spacing of the energy bands of said insulating layer being at least 2kT larger than the band spacing of said semiconductor body.
Claim 16
Dependent Claim
23 words
A luminescent diode according to claim 11, in which said insulating layer has a thickness of between approximately 50 nm and 1,000 nm.
Claim 17
Dependent Claim
21 words
A luminescent diode according to claim 11, in which said layer of insulating material is epitaxially formed on said semiconductor body.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-12-05 | 1981-06-06 | 1981-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-12-05 | 1985-06-06 | 1985-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-12-05 | 1989-06-06 | 1989-12-06 | $7700.00 | Window Closed / Lapsed |