Patent US4751201A successfully refreshed from Google Patents.
US4751201A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Passivation of gallium arsenide devices with sodium sulfide
Assignee: Iconectiv LLC
•
Filing: 1987-03-04
•
Granted: 1988-06-14
•
Expires: 2007-03-04
Abstract
Abstract A method of passivating a gallium arsenide electronic device by depositing a sulfide film on a portion on the substrate to be passivated for providing an ideal interface layer wherein surface state density is substantially reduced. The resulting electrical performance of the device is significantly greater than similar devices which have not been subject to passivation. The device may be a heterojunction bipolar transistor, PIN diode or field effect transistor.
Inventors
- 👤 Richard N. Nottenburg
- 👤 Claude J. Sandroff
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 07:52
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/30; H10F77/306; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; H10P14/68
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
136 words
A method of fabricating a passivated gallium arsenide electronic device comprising the steps of: providing a gallium arsenide substrate; forming an electronic device on the surface of said substrate by forming a first layer of gallium arsenide material of a first conductivity type on said substrate; forming a second layer of gallium arsenide material having a second conductivity type on said first layer; forming a third layer of gallium arsenide material having a first conductivity type overlying said second layer; and providing ohmic electrical contacts to said second and third layers; depositing a sodium sulfide film on said first, second, and third layers of semiconductor material except for said ohmic electrical contacts, said sodium sulfide film being deposited by application of an aqueous solution of sodium sulfide, thereby enhancing the current gain of the electronic device.
Claim 2
Independent Claim
136 words
A method of fabricating a passivated gallium arsenide electronic device comprising the steps of: providing a gallium arsenide substrate; forming an electronic device on the surface of said substrate by forming a first layer of gallium arsenide material of a first conductivity type on said substrate; forming a second layer of gallium arsenide material having a second conductivity type on said first layer; forming a third layer of gallium arsenide material having a first conductivity type overlying said second layer; and providing ohmic electrical contacts to said second and third layers; depositing a sodium sulfide film on said first, second, and third layers of semiconductor material except for said ohmic electrical contacts, said sodium sulfide film being deposited by application of an aqueous solution of sodium sulfide, thereby enhancing the current gain of the electronic device.
Claim 3
Dependent Claim
21 words
A method as defined in claim 1, wherein said sulfide film is applied by spin-on at 5000 RPM for 60 seconds.
Claim 4
Dependent Claim
21 words
A method as defined in claim 1 wherein the step of forming an electronic device comprises forming a heterostructure bipolar transistor.
Claim 5
Dependent Claim
15 words
An article of manufacture prepared by a process comprising the steps defined in claim 1.
Claim 6
Independent Claim
99 words
A method of fabricating a passivated gallium arsenide PIN photodiode comprising the steps of providing a PIN diode gallium arsenide semiconductor device consisting of first, second, and third active regions; providing an electrical contact to said third active region; and depositing a sodium sulfide film onto said first, second, and third active regions, except for said electrical contact, by application of an aqueous solution of sodium sulfide, said film functioning to reduce the background current in said photodiode due to generation of charge carriers at surface defects, thereby allowing the photodiode to be more sensitive at low light levels.
Claim 7
Independent Claim
99 words
A method of fabricating a passivated gallium arsenide PIN photodiode comprising the steps of providing a PIN diode gallium arsenide semiconductor device consisting of first, second, and third active regions; providing an electrical contact to said third active region; and depositing a sodium sulfide film onto said first, second, and third active regions, except for said electrical contact, by application of an aqueous solution of sodium sulfide, said film functioning to reduce the background current in said photodiode due to generation of charge carriers at surface defects, thereby allowing the photodiode to be more sensitive at low light levels.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-06-14 | 1991-12-14 | 1992-06-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-06-14 | 1995-12-14 | 1996-06-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-06-14 | 1999-12-14 | 2000-06-14 | $7700.00 | Window Closed / Lapsed |