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US4748627A
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Semiconductor memory device with an error correction function
Assignee: Toshiba Corp
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Filing: 1986-03-19
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Granted: 1988-05-31
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Expires: 2006-03-19
Abstract
Abstract Memory cell data is read out from memory cell arrays by a column decoder/sense amplifier in a data refresh mode. The data read out by the column decoder/sense amplifier is supplied to a decoding/correction circuit to be subjected to error detection. If an error is detected, the error data is corrected by the correction circuit. The corrected data is again supplied to the column decoder/sense amplifier, and the data held in the column decoder/sense amplifier is rewritten in an original memory cell, thus performing data refresh and error correction operations. In the refresh mode, addresses for selecting memory cells are automatically generated inside a memory device by an internal address generating means consisting of a pulse generator for generating a pulse signal in accordance with a column address strobe signal and a row address strobe signal and of a counter circuit for counting the pulse signal. The data read out in the data read mode is not corrected by the correction circuit. The access time of the memory cells is equal to that of the cells used in conventional memory devices.
Inventors
- 👤 Takashi Ohsawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 15:00
CPC Classifications
G; G06; G06F; G06F11/00; G06F11/07; G06F11/08; G06F11/10; G06F11/1008; G06F11/1076
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
113 words
A semiconductor memory device comprising: a memory cell array; data read/write means for reading out storage data from said memory cell array in data read, data write, and refresh modes, and rewriting data thereafter; data output means directly connected to the data read/write means for outputting, to an external circuit, data which is read out by said data read/write means and not subjected to error detection/correction; and error detection/correction means connected to the data read/write means for causing the readout data from said data read/write means to be subjected to error detection/correction and for supplying the error-corrected data to said data read/write means as rewritten data in the data read and refresh modes.
Claim 2
Dependent Claim
113 words
A semiconductor memory device comprising: a memory cell array; data read/write means for reading out storage data from said memory cell array in data read, data write, and refresh modes, and rewriting data thereafter; data output means directly connected to the data read/write means for outputting, to an external circuit, data which is read out by said data read/write means and not subjected to error detection/correction; and error detection/correction means connected to the data read/write means for causing the readout data from said data read/write means to be subjected to error detection/correction and for supplying the error-corrected data to said data read/write means as rewritten data in the data read and refresh modes.
Claim 3
Dependent Claim
159 words
A semiconductor memory device comprising: a memory cell array consisting of a plurality of memory cells arranged in a matrix in X and Y directions; internal address generating means for generating a Y direction address based on an X direction address for selecting said memory cell array in a refresh mode; data read/write means for reading out storage data from a given memory cell in said memory cell array which is designated by a pair of the X and Y direction addresses, and for rewriting data thereafter; data output means directly connected to the data read/write means for outputting, to an external circuit, data which is read out by said data read/write means and not subjected to error detection/correction; and error detection/correction means connected to the data read/write means for causing the readout data from said data read/write means to be subjected to error detection/correction, and for supplying the error-corrected data to said data read/write means as rewritten data.
Claim 4
Dependent Claim
159 words
A semiconductor memory device comprising: a memory cell array consisting of a plurality of memory cells arranged in a matrix in X and Y directions; internal address generating means for generating a Y direction address based on an X direction address for selecting said memory cell array in a refresh mode; data read/write means for reading out storage data from a given memory cell in said memory cell array which is designated by a pair of the X and Y direction addresses, and for rewriting data thereafter; data output means directly connected to the data read/write means for outputting, to an external circuit, data which is read out by said data read/write means and not subjected to error detection/correction; and error detection/correction means connected to the data read/write means for causing the readout data from said data read/write means to be subjected to error detection/correction, and for supplying the error-corrected data to said data read/write means as rewritten data.
Claim 5
Dependent Claim
225 words
A semiconductor memory device comprising: a memory cell array consisting of a plurality of memory cells arranged in a matrix in X and Y directions; internal address generating means for generating a Y direction address based on an X direction address for selecting said memory cell array in a refresh mode; data read/write means for reading out storage data from a given memory cell in said memory cell array which is designated by a pair of the X and Y direction addresses, and for rewriting data thereafter in the refresh mode; data output means directly connected to the data read/write means for outputting, to an external circuit, data which is read out by said data read/write means and not subjected to error detection/correction; error detection/correction means connected to the data read/write means for detecting and correcting errors found in the data read from said data read/write means, in a data read, write and refresh modes, and for supplying the error-corrected data to said data read/write means as rewritten data, in the data read and refresh modes; and encoding means connected to the data read/write means for supplying the data obtained by rewriting the error-corrected data supplied from said error detection/correction means based on externally input data, and for generating a check bit based on the data obtained by said rewriting, in the data write mode.
Claim 6
Dependent Claim
225 words
A semiconductor memory device comprising: a memory cell array consisting of a plurality of memory cells arranged in a matrix in X and Y directions; internal address generating means for generating a Y direction address based on an X direction address for selecting said memory cell array in a refresh mode; data read/write means for reading out storage data from a given memory cell in said memory cell array which is designated by a pair of the X and Y direction addresses, and for rewriting data thereafter in the refresh mode; data output means directly connected to the data read/write means for outputting, to an external circuit, data which is read out by said data read/write means and not subjected to error detection/correction; error detection/correction means connected to the data read/write means for detecting and correcting errors found in the data read from said data read/write means, in a data read, write and refresh modes, and for supplying the error-corrected data to said data read/write means as rewritten data, in the data read and refresh modes; and encoding means connected to the data read/write means for supplying the data obtained by rewriting the error-corrected data supplied from said error detection/correction means based on externally input data, and for generating a check bit based on the data obtained by said rewriting, in the data write mode.
Claim 7
Dependent Claim
79 words
A device according to claim 2, wherein said internal address generating means comprises: a pulse generator which generates a pulse signal when a level of only a row address strobe signal is changed during an external-address input period, and does not generate the pulse signal when levels of both row and column address strobe signals are changed; and a counter circuit for counting the pulse signal generated from the pulse generator so as to generate said Y direction address.
Claim 8
Dependent Claim
79 words
A device according to claim 3, wherein said internal address generating means comprises: a pulse generator which generates a pulse signal when a level of only a row address strobe signal is changed during an external-address input period, and does not generate the pulse signal when levels of both row and column address strobe signals are changed; and a counter circuit for counting the pulse signal generated from the pulse generator so as to generate said Y direction address.
Claim 9
Dependent Claim
36 words
A device according to claim 4, wherein said counter circuit consists of a series circuit of a plurality of binary counters, and an output signal from upper-bit binary counters is generated as said Y direction address.
Claim 10
Dependent Claim
36 words
A device according to claim 5, wherein said counter circuit consists of a series circuit of a plurality of binary counters, and an output signal from upper-bit binary counters is generated as said Y direction address.
Claim 11
Dependent Claim
55 words
A device according to claim 6, wherein said memory cell array comprises a plurality of word blocks, each consisting of at least one memory cell for storing normal data and at least one memory cell for storing a check bit, and said error detection/correction means performs the data error detection/correction operation in word block unit.
Claim 12
Dependent Claim
55 words
A device according to claim 7, wherein said memory cell array comprises a plurality of word blocks, each consisting of at least one memory cell for storing normal data and at least one memory cell for storing a check bit, and said error detection/correction means performs the data error detection/correction operation in word block units.
Claim 13
Dependent Claim
73 words
A device according to claim 8, wherein said memory cells are arranged in 2 nx rows extending in the X-direction and 2 ny columns extending in the Y direction, each of said word blocks has 2 m memory cells, where 0≦m≦ny, and said counter circuit has (nx+ny-m) binary counters, the output signals of upper (ny-m) binary counters being used as said Y direction address, wherein x, y, n, and m are non-negative integers.
Claim 14
Dependent Claim
72 words
A device according to claim 9, wherein said memory cells are arranged in 2 nx rows extending in the X-direction and 2 ny columns extending in the Y-direction, each of said word blocks has 2 m memory cells, where 0≦m≦ny, and said counter circuit has (ny+ny-m) binary counters, the output signals of upper (ny-m) binary counters being used as said Y direction address, wherein x, y, n, and m are non-negative integers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-05-31 | 1991-11-30 | 1992-05-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-31 | 1995-11-30 | 1996-05-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-31 | 1999-11-30 | 2000-05-31 | $7700.00 | Window Closed / Lapsed |